Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon

1998 ◽  
Vol 532 ◽  
Author(s):  
Ning Yu ◽  
Amitabh Jain ◽  
Doug Mercer
Keyword(s):  
Ion Implantation ◽  
Process Development ◽  
Cmos Technology ◽  
Low Energy ◽  
Defect Engineering ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Ultra Shallow Junctions ◽  
Technology Nodes ◽  
The Impact

ABSTRACTThe SIA roadmap predicts that junction depths of 500 angstroms are required for CMOS technology nodes of 0.18 μm or beyond by the year 2001. There are several ultra-shallow junction doping techniques currently under investigation. These include beamline ion implantation, plasma immersion ion implantation, and gas immersion laser doping. This study was based on beamline ion implantation of B, P, and As into single-crystal Si wafers at 0.25-2 keV to doses of (2- 10)×1014 at./cm2 with minimized beam energy contamination. Rapid thermal annealing was applied to the implanted wafers at 1000-1050 °C for 10-15 sec at ramp rates of 35- 50 °C/s in a N2 ambient. Transient enhanced diffusion was observed for all three implant species. For example, the depth of 0.25 keV B measured by SIMS increases from 250 to 520 A at a concentration level of l×1017 at./cm3 upon RTA. To minimize the TED, several schemes of defect engineering were applied prior to low energy implantation, including pre-amorphization and implantation of other species. A comparison of TED for different implantation conditions is given with the aim of process development for minimizing TED. The impact of energy contamination on ultra shallow junctions is also addressed.

Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

1997 ◽  
Vol 469 ◽  
Author(s):  
N. E. B. Cowern ◽  
E. J. H. Collart ◽  
J. Politiek ◽  
P. H. L. Bancken ◽  
J. G. M. Van Berkum ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Crystalline Silicon ◽  
Cmos Technology ◽  
Low Energy ◽  
Defect Engineering ◽  
Enhanced Diffusion ◽  
Physical Mechanisms ◽  
Transient Enhanced Diffusion ◽  
Junction Formation ◽  
Silicon Cmos

ABSTRACTLow energy implantation is currently the most promising option for shallow junction formation in the next generations of silicon CMOS technology. Of the dopants that have to be implanted, boron is the most problematic because of its low stopping power (large penetration depth) and its tendency to undergo transient enhanced diffusion and clustering during thermal activation. This paper reports recent advances in our understanding of low energy B implants in crystalline silicon. In general, satisfactory source-drain junction depths and sheet resistances are achievable down to 0.18 micron CMOS technology without the need for implantation of molecular species such as BF2. With the help of defect engineering it may be possible to reach smaller device dimensions. However, there are some major surprises in the physical mechanisms involved in implant profile formation, transient enhanced diffusion and electrical activation of these implants, which may influence further progress with this technology. Some initial attempts to understand and model these effects will be described.

Reduction of boron transient enhanced diffusion in silicon by low-energy cluster ion implantation

1998 ◽  
Vol 54 (1-3) ◽  
pp. 80-83 ◽  
Author(s):  
Norihiro Shimada ◽  
Takaaki Aoki ◽  
Jiro Matsuo ◽  
Isao Yamada ◽  
Kenichi Goto ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Cluster Ion ◽  
Energy Cluster

Complete Suppression of the Transient Enhanced Diffusion of B Implanted in Preamorphized Si by Interstitial Trapping in a Spatially Separated C-Rich Layer

2002 ◽  
Vol 717 ◽  
Author(s):  
E. Napolitani ◽  
A. Coati ◽  
D. De Salvador ◽  
A. Carnera ◽  
S. Mirabella ◽  
...  
Keyword(s):  
Silicon Layer ◽  
Complementary Metal Oxide Semiconductor ◽  
Amorphous Layer ◽  
Oxide Semiconductor ◽  
Complete Suppression ◽  
Silicon Sample ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Ultra Shallow Junctions ◽  
Technology Nodes

AbstractA method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed in order to epitaxially regrow the amorphous layer and electrically activate the dopant. The back-flow of silicon interstitials released by the preamorphization end-of-range (EOR) damage is completely trapped by a carbon-rich silicon layer interposed by MBE between the damage and the implanted boron. No appreciable TED is observed in the samples up to complete dissolution of the EOR damage, and complete electrical activation is obtained. The method might be considered for the realization of ultra shallow junctions for the far future complementary metal-oxide semiconductor technology nodes.

Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

2013 ◽  
Vol 284-287 ◽  
pp. 98-102
Author(s):  
Hung Yu Chiu ◽  
Yean Kuen Fang ◽  
Feng Renn Juang
Keyword(s):  
Cmos Technology ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Technology Applications ◽  
Implantation Process ◽  
Phosphorus Doped

The carbon (C) co-implantation and advanced flash anneal were employed to form the ultra shallow junction (USJ) for future nano CMOS technology applications. The effects of the C co-implantation process on dopant transient enhanced diffusion (TED) of the phosphorus (P) doped nano USJ NMOSFETs were investigated in details. The USJ NMOSFETs were prepared by a foundry’s 55 nano CMOS technology. Various implantation energies and doses for both C and P ions were employed. Results show the suppression of the TED is strongly dependent on both C and P implantation conditions. Besides, the mechanisms of P TED and suppression by C ion co-implantation were illustrated comprehensively with schematic models.

Suppression of transient enhanced diffusion following in situ photoexcitation during boron ion implantation

1995 ◽  
Vol 67 (15) ◽  
pp. 2158-2160 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
G. A. Rozgonyi ◽  
C. W. White
Keyword(s):  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation

1999 ◽  
Vol 86 (11) ◽  
pp. 6039-6042 ◽  
Author(s):  
I. O. Usov ◽  
A. A. Suvorova ◽  
V. V. Sokolov ◽  
Y. A. Kudryavtsev ◽  
A. V. Suvorov
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion
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