Room Temperature Uv Laser Continuous Direct Writing of Al From Tma

1987 ◽  
Vol 101 ◽  
Author(s):  
J.E. Bouree ◽  
J. Flicstein
Keyword(s):  
Light Source ◽  
Process Parameters ◽  
Room Temperature ◽  
Deposition Process ◽  
Single Step ◽  
Chemical Processing ◽  
Direct Writing ◽  
Uv Laser ◽  
Experimental Proof ◽  
P Type

ABSTRACTAluminum lines have been drawn at a writing speed of 3.8 μm/s on (100) p-type Si by UV laser-assisted chemical processing, from a flow of TMA diluted in H2. These results are the experimental proof of direct writing at room temperature due to a single-step deposition process induced by a single light source. The useful (30 μQ-cm) ohmic-type resistivity obtained depends strongly on the photolytic process parameters.

Copper Laser Induced Chemical Vapor Deposition of al Films

1990 ◽  
Vol 201 ◽  
Author(s):  
M. I. Yankova ◽  
W. Shanov ◽  
B. Ivanov
Keyword(s):  
Laser Power ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Single Step ◽  
Laser Power Density ◽  
Chemical Compositions ◽  
Silicon Substrates ◽  
Direct Writing ◽  
Scanning Velocity

AbstractThe focused output from a copper laser (λ = 510nm) has been used for direct writing of Al on silicon substrates by pyrolitical decomposition of trimethilaluminum (TMA). These results demonstrate that direct writing can be accomplished at room temperature by a single-step deposition process induced by a single light source. For a laser power density between 5 and 50 kW cm−2, the widths of the stripes varied between 60 and 200 μm with corresponding thickness between 0.5 and 0.8 μm. The width of the stripes proved to be independent of the scanning velocity, Vs, within the range 50 μm s−1 < Vs < 300 μm s−1. The analysis included scanning electron microscopy (SEM) to study the film morphology, a step profiler to evaluate the thicknesses and the profiles of the stripes, and energy dispersive spectroscopy (EDS) to provide their chemical compositions.

scholarly journals Porous Gig-Lox TiO2 Doped with N2 at Room Temperature for P-Type Response to Ethanol

Chemosensors ◽  
2019 ◽  
Vol 7 (1) ◽  
pp. 12 ◽  
Author(s):  
Emanuele Smecca ◽  
Salvatore Sanzaro ◽  
Clelia Galati ◽  
Lucio Renna ◽  
Leonardo Gervasi ◽  
...  
Keyword(s):  
Tio2 Film ◽  
Room Temperature ◽  
Electrical Response ◽  
High Surface ◽  
Volume Ratio ◽  
Reactive Sputtering ◽  
Deposition Process ◽  
Deposition Method ◽  
Type Character ◽  
P Type

Nanostructured materials represent a breakthrough in many fields of application. Above all for sensing, the use of nanostructures with a high surface/volume ratio is strategic to raise the sensitivity towards dangerous environmental gas species. A new Dc-Reactive sputtering Deposition method has been applied to grow highly porous p-type nitrogen-doped titanium oxide layers by modifying the previously developed reactive sputtering method called gig-lox. The doping of the films was achieved at room temperature by progressive incorporation of nitrogen species during the deposition process. Two different amounts of N2 were introduced into the deposition chamber at flow rates of 2 and 5 standard cubic centimeter per minutes (sccm) for doping. It has been found that the N2 uptake reduces the deposition rate of the TiO2 film whilst the porosity and the roughness of the grown layer are not penalized. Despite the low amount of N2, using 2 sccm of gas resulted in proper doping of the TiO2 film as revealed by XPS Analyses. In this case, nitrogen atoms are mainly arranged in substitutional positions with respect to the oxygen atoms inside the lattice, and this defines the p-type character of the growing layer. Above this strategic structural modification, the multibranched spongy porosity, peculiar of the gig-lox growth, is still maintained. As proof of concept of the achievements, a sensing device was prepared by combining this modified gig-lox deposition method with state-of-the-art hot-plate technology to monitor the electrical response to ethanol gas species. The sensor exhibited a sensitivity of a factor of ≈2 to 44 ppm of ethanol at ≈200 °C as measured by a rise in the layer resistivity according to the p-type character of the material. At the higher temperature of ≈350 °C, the sensor turned to n-type as without doping. This behavior was related to a loss of nitrogen content inside the film during the annealing. It was indeed proved that p-type doping of a gig-lox sponge during growth is feasible, even at room temperature, without losing the layer porosity and the capability to host and detect environmental species. Moreover, the material integration on a device is simply done as the last production step. Easy TiO2 doping procedures, combined with porosity, are of general purpose and interest for several applications even on flexible substrates.

Effect of Sputtering Process Parameters on the Thermoelectric Properties of P and N-Type Bi2Te3 Films

2012 ◽  
Vol 185 ◽  
pp. 94-98
Author(s):  
Arina ◽  
Fan Shermin Chow Hui ◽  
Banu Abdul Bari Shamira ◽  
Ai Lin Chia ◽  
Ye Ko San ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Process Parameters ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Characterization Methods ◽  
Force Microscopy ◽  
Atomic Force ◽  
Argon Flow ◽  
P Type

Thermoelectric is an ever evolving field that serves many critical needs (cooling and power generation) in the industry. The key objective of this work is to fabricate Bismuth Telluride (Bi2Te3) thin-films by varying the various process parameters using a radio-frequency (RF) magnetron sputtering disposition technique. Characterization methods such as four point probe resistivity, surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), Seebeck coefficient and thermal diffusivity are performed on the N and P-type Bi2Te3films. The samples are analysed for their electrical properties in relation to the evolved microstructures, for how the process parameters of sputtering and annealing affect these changes. The results demonstrate that N-Type film (S2) processed using sputtering parameters of 7mT, 100W, 50sccm of argon flow under room temperature for 30mins with no annealing and the P-Type film processed using sputtering parameters of 7mT, 100W, 60sccm under room temperature for 30mins with institute annealing at 200°C for 2h exhibit desirable thermoelectric properties suitable for cooling application in microelectronic and optoelectronic devices, optimizing their performance and reliability.

Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD)

1990 ◽  
Vol 204 ◽  
Author(s):  
C. Wang ◽  
C.H. Bjorkman ◽  
D.R. Lee ◽  
M.J. Williams ◽  
G. Lucovsky
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Thin Films ◽  
Mos Devices ◽  
Exit Port ◽  
Heavily Doped ◽  
Si Films ◽  
P Type

ABSTRACTWe have succeeded in depositing both activated n- and p-type μc-Si, by a low temperature, 250°C, remote PECVD process in which dopant gases (PH3 or B2H6)/Silane (SiH4) mixtures are injected downstream from the exit port of a He/H2 plasma. The room temperature conductivities and activation energies for the n- and p-type μc-Si are respectively, 40 S/cm with Eaa=0.018 eV, and 5 S/cm with Ea =0.040 eV. Doped μc-Si is obtained for PH3/SiH4 ratios up to 1%, and for B2H6/SiH4 ratios to 0.1%. For B2H6/SiH4 ratios < 0.1%, the deposited p-type material is doped a-Si rather than doped μc-Si. We have shown that these heavily doped μc-Si film are a viable candidate for the gate electrode in MOS devices. The application of these doped μc-Si films in p-i-n diode devices has also been studied.

Effect of precursor concentration on the properties and tuning of conductivity between p-type and n-type Cu1−XCdXS2 thin films deposited by a single step solution process as a novel material for photovoltaic applications

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 23015-23021 ◽  
Author(s):  
V. Nirmal Kumar ◽  
R. Suryakarthick ◽  
S. Karuppusamy ◽  
Mukul Gupta ◽  
Y. Hayakawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Solution Process ◽  
Single Step ◽  
Precursor Concentration ◽  
Photovoltaic Applications ◽  
Novel Material ◽  
P Type

Cu1−XCdXS2 thin films were deposited from precursor solutions having different concentrations of cation sources, by a single step solution process at room temperature.

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

Degradation in a Methyl-phenyl Co-Polymeric Polysilane for LED Applications

2003 ◽  
Vol 769 ◽  
Author(s):  
Asha Sharma ◽  
Deepak ◽  
Monica Katiyar ◽  
Satyendra Kumar ◽  
V. Chandrasekhar ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Weight ◽  
Light Source ◽  
Room Temperature ◽  
Light Exposure ◽  
Room Temperature Photoluminescence ◽  
Pl Spectrum ◽  
Pl Intensity ◽  
Methyl Phenyl

AbstractThe optical degradation of polysilane copolymer has been studied in spin cast thin films and solutions using light source of 325 nm wavelength. The room temperature photoluminescence (PL) spectrum of these films show a sharp emission at 368 nm when excited with a source of 325 nm. However, the PL intensity deteriorates with time upon light exposure. Further the causes of this degradation have been examined by characterizing the material for its transmission behaviour and changes occurring in molecular weight as analysed by GPC data.

New Potential Biologically Active Compounds: Synthesis and Characterization of Urea and Thiourea Derivativpes Bearing 1,2,4-oxadiazole Ring

2020 ◽  
Vol 17 (7) ◽  
pp. 525-534 ◽  
Author(s):  
Nevin Arıkan Ölmez ◽  
Faryal Waseer
Keyword(s):  
Microwave Irradiation ◽  
Room Temperature ◽  
Antimicrobial Activities ◽  
Phenyl Isocyanate ◽  
Single Step ◽  
Biologically Active Compounds ◽  
Biologically Active ◽  
Active Compounds ◽  
Thiourea Derivatives ◽  
Acyl Chlorides

Background: Urea, thiourea, and 1,2,4-oxadiazole compounds are of great interest due to their different activities such as anti-inflammatory, antiviral, analgesic, fungicidal, herbicidal, diuretic, antihelminthic and antitumor along with antimicrobial activities. Objective: In this work, we provide a new series of potential biologically active compounds containing both 1,2,4-oxadiazole and urea/thiouprea moiety. Materials and Methods: Firstly, 5-chloromethyl-3-aryl-1,2,4-oxadiazoles (3a-j) were synthesized from the reaction of different substituted amidoximes (2a-j) and chloroacetyl chloride in the presence of pyridine by conventional and microwave-assisted methods. In the conventional method, 1,2,4-oxadiazoles were obtained in two steps. O-acylamidoximes obtained in the first step at room temperature were heated in toluene for an average of one hour to obtain 1,2,4-oxadiazoles. The yields varied from 70 to 96 %. 1,2,4-oxadiazoles were obtained under microwave irradiation in a single step in a 90-98 % yield at 160 °C in five minutes. 5-aminomethyl-3-aryl-1,2,4- oxadiazoles (5a-j) were obtained by Gabriel amine synthesis in two steps from corresponding 5-chloromethyl-3- aryl-1,2,4-oxadiazoles. Finally, twenty new urea (6a-j) and thiourea (7a-j) compounds bearing oxadiazole ring were synthesized by reacting 5-aminomethyl-3-aryl-1,2,4-oxadiazoles with phenyl isocyanate and isothiocyanate in tetrahydrofuran (THF) at room temperature with average yields (40-70%). Results and Discussions: An efficient and rapid method for the synthesis of 1,2,4-oxadiazoles from the reaction of amidoximes and acyl halides without using any coupling reagent under microwave irradiation has been developed, and twenty new urea/thiourea compounds bearing 1,2,4-oxadiazole ring have been synthesized and characterized. Conclusion: We have synthesized a new series of urea/thiourea derivatives bearing 1,2,4-oxadiazole ring. Also facile synthesis of 3,5-disubstituted 1,2,4-oxadiazoles from amidoximes and acyl chlorides under microwave irradiation was reported. The compounds were characterized using FTIR, 1H NMR, 13C NMR, and elemental analysis techniques.

A p-Type PbS Quantum Dot Ink with Improved Stability for Solution Processable Optoelectronics

2021 ◽  
Author(s):  
Fiaz Ahmed ◽  
John Hardin Dunlap ◽  
Perry J. Pellechia ◽  
Andrew Greytak
Keyword(s):  
Quantum Dot ◽  
Ligand Exchange ◽  
Chemical Characterization ◽  
Single Step ◽  
Improved Stability ◽  
Solution Processable ◽  
P Type ◽  
Pbs Quantum Dot

A highly stable p-type PbS-QDs ink is prepared using a single-step biphasic ligand exchange route, overcoming instability encountered in previous reports. Chemical characterization of the ink reveals 3-mercaptopriopionic acid (MPA)...

Formation of laser-induced periodic surface structures on different materials: fundamentals, properties and applications

2020 ◽  
Vol 9 (1-2) ◽  
pp. 11-39 ◽  
Author(s):  
Stephan Gräf
Keyword(s):  
Friction And Wear ◽  
Review Paper ◽  
Laser Wavelength ◽  
Single Step ◽  
Surface Structures ◽  
Direct Writing ◽  
Periodic Surface ◽  
Experimental Approaches ◽  
Ordered Nanostructures ◽  
Physical Background

AbstractThe use of ultra-short pulsed lasers enables the fabrication of laser-induced periodic surface structures (LIPSS) on various materials following a single-step, direct-writing technique. These specific, well-ordered nanostructures with periodicities in the order of the utilised laser wavelength facilitate the engineering of surfaces with functional properties. This review paper discusses the physical background of LIPSS formation on substrates with different material properties. Using the examples of structural colours, specific wetting states and the reduction of friction and wear, this work presents experimental approaches that allow to deliberately influence the LIPSS formation process and thus tailor the surface properties. Finally, the review concludes with some future developments and perspectives related to forthcoming applications of LIPSS-based surfaces are discussed.

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