Effect of precursor concentration on the properties and tuning of conductivity between p-type and n-type Cu1−XCdXS2 thin films deposited by a single step solution process as a novel material for photovoltaic applications

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 23015-23021 ◽  
Author(s):  
V. Nirmal Kumar ◽  
R. Suryakarthick ◽  
S. Karuppusamy ◽  
Mukul Gupta ◽  
Y. Hayakawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Solution Process ◽  
Single Step ◽  
Precursor Concentration ◽  
Photovoltaic Applications ◽  
Novel Material ◽  
P Type

Cu1−XCdXS2 thin films were deposited from precursor solutions having different concentrations of cation sources, by a single step solution process at room temperature.

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

Enhanced transmittance and mobility of p-type copper iodide thin films prepared at room temperature via a layer-by-layer approach

2019 ◽  
Vol 361 ◽  
pp. 396-402 ◽  
Author(s):  
Fangjuan Geng ◽  
Lei Yang ◽  
Bing Dai ◽  
Shuai Guo ◽  
Gang Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Layer By Layer ◽  
Copper Iodide ◽  
P Type

A low temperature, single step, pulsed d.c magnetron sputtering technique for copper indium gallium diselenide photovoltaic absorber layers

2013 ◽  
Vol 1538 ◽  
pp. 45-50 ◽  
Author(s):  
Sreejith Karthikeyan ◽  
Kushagra Nagaich ◽  
Arthur E Hill ◽  
Richard D Pilkington ◽  
Stephen A Campbell
Keyword(s):  
Optical Properties ◽  
Solar Cell ◽  
Single Step ◽  
Copper Indium Gallium Diselenide ◽  
Copper Indium ◽  
Photovoltaic Applications ◽  
Indium Gallium ◽  
P Type ◽  
Substrate Temperatures ◽  
Copper Indium Gallium

ABSTRACTPulsed d.c Magnetron Sputtering (PdcMS) has been investigated for the first time to study the deposition of copper indium gallium diselenide (CIGS) thin films for photovoltaic applications. Pulsing the d.c. in the mid frequency region enhances the ion intensity and enables long term arc-free operation for the deposition of high resistivity materials such as CIGS. It has the potential to produce films with good crystallinity, even at low substrate temperatures. However, the technique has not generally been applied to the absorber layers for photovoltaic applications. The growth of stoichiometric p-type CIGS with the desired electro-optical properties has always been a challenge, particularly over large areas, and has involved multiple steps often including a dangerous selenization process to compensate for selenium vacancies. The films deposited by PdcMS had a nearly ideal composition (Cu0.75In0.88Ga0.12Se2) as deposited at substrate temperatures ranging from no intentional heating to 400 °C. The films were found to be very dense and pin-hole free. The stoichiometry was independent of heating during the deposition, but the grain size increased with substrate temperature, reaching about ∼ 150 nm at 400 °C. Hot probe analysis showed that the layers were p-type. The physical, structural and optical properties of these films were analyzed using SEM, EDX, XRD, and UV-VIS-NIR spectroscopy. The material characteristics suggest that these films can be used for solar cell applications. This novel ion enhanced single step low temperature deposition technique may have a critical role in flexible and tandem solar cell applications compared to other conventional techniques which require higher temperatures.

p-Type Field Effect Transistor and UV-Photoconductive Characteristics of Na Doped ZnMgO Thin Films

2013 ◽  
Vol 668 ◽  
pp. 681-685
Author(s):  
Ya Xue ◽  
Hai Ping He ◽  
Zhi Zhen Ye
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Carrier Mobility ◽  
Room Temperature ◽  
Zno Films ◽  
Electrical Measurements ◽  
Acceptor Dopant ◽  
Znmgo Thin Film ◽  
Effect Transistor ◽  
P Type

In this study, the authors have presented results for fabricated ZnO based FET and the UV-photoconductive characteristics of Na doped ZnMgO thin films. The electrical measurements confirmed that the conductivity of the Na doped ZnMgO thin film is p-type, and the carrier mobility was estimated to be 2.3 cm2V-1S-1. Moreover, after exposed to the 365 nm ultraviolet light, the Na doped ZnMgO thin films still exhibited p-type behavior under gate voltage ranging from -5 to 2 V, and the Id increased a little while the carrier mobility did not change much. The photocurrent was measured under a bias of 6 V in air at room temperature. The films performed a higher current intensity after the illumination. The instantaneous rise of the photocurrent was completed when exposed to the 365 nm ultraviolet for 20 s, after switching the ultraviolet off the photocurrent decayed in a slower rate. The enhance rate of photocurrent was about 1.33 %. Conclusively, Na is a considerable acceptor dopant for making high quality p-type ZnO films, and the tiny change in the photocurrent of p-type Na doped ZnMgO thin film made it relatively stable when fabricating LEDs and other optoelectronic devices.

Study of the Defect Levels and Interface Properties of CdTe and CdS Polycrystalline Thin Films

1991 ◽  
Vol 238 ◽  
Author(s):  
F. Abou-Elfotouh ◽  
S. Ashour ◽  
S. A. Alkuhaimi ◽  
J. Zhang ◽  
D. J. Dunlavy ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deep Trap ◽  
Cdte Film ◽  
Interface States ◽  
Polycrystalline Thin Films ◽  
Deviation From Stoichiometry ◽  
Electrochemically Deposited ◽  
Defect Levels ◽  
P Type

ABSTRACTThe properties (electrical and structural) and the defect levels dominating cadmium telluride (CdTe) films prepared by radio frequency (rf) planar magnetron sputtering, and electrochemical deposition have been determined and compared. The properties of the deposited CdTe film and the behavior of its interface with cadmium sulfide (CdS) depend strongly on the method of depositing the CdTe film, and on postdeposition heat treatments. These treatments determine various parameters crucial to the device performance, including the type and concentration of the dominant defects, interface states, and deep trap levels. Photoluminescence (PL) emission from p-type CdTe polycrystalline thin films and single crystals is reported at low temperatures (9–50 K) as well as at room temperature. The room temperature PL peak at 1.58 eV due to band-to-band recombination was observed for the first time in polycrystalline thin films. The peak location of the exciton emission is indicative of the structure perfection of the film, which is also related to the deviation from stoichiometry. The as-grown polycrystalline films are composed of a close-packed array of preferentially oriented (the [100], [110], and [111] axes aligned perpendicular to the substrate) single-crystal grains of a size in the range of 0.25–2.0 μm for the electrochemically deposited films (E-film) and 0.3–4.0 μm for rf sputtered material (rf-film). The resistivity of the heat treated E-film was substantially lower than that of the rf-film (ρ = 1.0–5.0 and 300–500 Ωcm). The performance of the CdS/(E-CdTe) devices is limited by deep levels, while the performance of die rf-CdTe device is affected by a high density of interface states.

scholarly journals Semiconducting Thin Films of CuSbS2

Quimica Hoy ◽  
2011 ◽  
Vol 2 (1) ◽  
pp. 4
Author(s):  
Sarah Messina ◽  
Paz Hernández ◽  
Yolanda Peña
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Solid State ◽  
Optical Band Gap ◽  
Deposition Technique ◽  
X Ray ◽  
Absorber Material ◽  
Photovoltaic Applications ◽  
P Type ◽  
Semiconducting Thin Films

In this paper we present a method to produce polycrystalline CuSbS2 thin ?lms through a solid-state reaction at 350 ºC and 400 ºC involving thin ?lm multilayer of Sb2S3 -CuS or Cu2-xSe by chemical bath deposition technique. The formation of the ternary compound was confirmed by X-ray di?raction (XRD). A direct optical band gap of approx. 1.57 eV anda p-type electrical conductivity of 10-3 (Ω•cm)-1 were measured. These optoelectronic characteristics show perspective for the use of CuSbS, as a suitable absorber material in photovoltaic applications.

scholarly journals Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature

2020 ◽  
Vol 23 (3) ◽  
Author(s):  
Raul Ramos ◽  
Marcio Peron Franco de Godoy ◽  
Elidiane Cipriano Rangel ◽  
Nilson Cristino da Cruz ◽  
Steven F. Durrant ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
P Type ◽  
Co Doped

Morphology Controlled n-Type TiO2 and Stoichiometry Adjusted p-Type Cu2ZnSnS4 Thin Films for Photovoltaic Applications

2017 ◽  
Vol 17 (10) ◽  
pp. 5154-5162 ◽  
Author(s):  
S. Varadharajaperumal ◽  
Chinnaiyah Sripan ◽  
R. Ganesan ◽  
Gopalkrishna Hegde ◽  
M. N. Satyanarayana
Keyword(s):  
Thin Films ◽  
Photovoltaic Applications ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document