The Optical Properties of Metal-Free Polymer Films with Self-Assembled Nanoparticles

In this paper, it is reported that a metal-free and non-conjugated polymer, MA-PEG 8000-BADGE (MP8B), exhibits an antireflective property and substrate-dependent photoluminescence (SDP). MP8B was constructed from maleic anhydride, poly(ethylene glycol) and bisphenol-A diglycidyl ether. Self-assembled nanoparticles are found in MP8B and can prospectively act as scattering centers to improve light trapping and extraction. MP8B films prepared from MP8B solutions have been characterized by photoluminescence (PL), atomic force microscopy (AFM), tunnelling electron microscope (TEM), reflectance, transmittance, and UV-Vis absorption spectrum. MP8B films can suppress light reflection and enhance light transmission. The PL spectrum of MP8B film on ITO peaks at approximately 538 nm, spanning from 450 to 660 nm at a concentration of 25 mM. Meanwhile, the effects of concentration and substrate on the PL of MP8B films are also investigated in this study. Surface roughness becomes larger with concentration. A red shift of the PL spectrum is observed as solution concentration increases. Meanwhile, aggregation-caused quenching (ACQ) is insignificant. Moreover, the PL spectra of MP8B films show a substrate-dependent phenomenon due to dielectric screening. The optical band-gap energy of MP8B is approximately 4.05 eV. It is concluded that MP8B is a promising candidate for a host material, and its film can be utilized as a multifunctional layer (i.e., antireflective and light-scattering functions) for optoelectronic applications.

III-V nanowires with quantum dots: MBE growth and properties

We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.

Extensive Broadband Near-Infrared Emissions from GexSi1−x Alloys on Micro-Hole Patterned Si(001) Substrates

Broadband near-infrared (NIR) luminescent materials have been continuously pursued as promising candidates for optoelectronic devices crucial for wide applications in night vision, environment monitoring, biological imaging, etc. Here, graded GexSi1−x (x = 0.1–0.3) alloys are grown on micro-hole patterned Si(001) substrates. Barn-like islands and branch-like nanostructures appear at regions in-between micro-holes and the sidewalls of micro-holes, respectively. The former is driven by the efficient strain relation. The latter is induced by the dislocations originating from defects at sidewalls after etching. An extensive broadband photoluminescence (PL) spectrum is observed in the NIR wavelength range of 1200–2200 nm. Moreover, the integrated intensity of the PL can be enhanced by over six times in comparison with that from the reference sample on a flat substrate. Such an extensively broad and strong PL spectrum is attributed to the coupling between the emissions of GeSi alloys and the guided resonant modes in ordered micro-holes and the strain-enhanced decomposition of alloys during growth on the micro-hole patterned substrate. These results demonstrate that the graded GexSi1−x alloys on micro-hole pattered Si substrates may have great potential for the development of innovative broadband NIR optoelectronic devices, particularly to realize entire systems on a Si chip.

The influence of size on the photoluminescence properties of ZnO nanostructures

This paper describes methods for synthesizing different nanostructures of ZnO in aqueous solutions at low temperatures and examines the effect of the size of the synthesized samples on the photoluminescence (PL) spectra. As the diameters of the nanostructures increased, a decrease in the ratio of the intensity of the ultraviolet radiation band to the intensity of the yellow radiation band in the PL spectrum observed. It is found that changing the diameters of nanostructures from 15 nm to 1000 nm leads to a decrease in their bandgap energy (Eg) from 3.28 to 3.21 eV. When the diameters of the nanostructures were less than ~400 nm, it was found that the energy of the band gap was strongly depend on the size of the nanostructure, and that the bond was weaker as the size of the nanostructures exceeded 400 nm.

High-Order Resonant Peaks and Polarization Dependence of Microphotoluminescence in Whispering-Gallery Mode ZnO Microrod Cavity

High order phenomena in the visible range and with polarization dependence in the ultraviolet (UV) region of the microphotoluminescence (micro-PL) spectrum in whispering-gallery mode (WGM) ZnO microrod cavity have been thoroughly studied at room temperature. WGM ZnO microrod cavity with good crystallinity is produced by the CVD growth method, and the ZnO microrod structures are characterized by structural and optical methods. Through the micro-PL spectrum measurement of the ZnO microrod, it is found that high-order resonance peaks appeared in the visible region. The different polarization conditions can be adjusted by rotating the angles of the polarizer, and it is proved that the micro-PL spectrum has strong polarization-dependent behavior in the UV region. Our results imply broad application potentials in the study of ZnO microrod-based photonic cavity devices.

Fabrication and Characterization of MoS2/h-BN and WS2/h-BN Heterostructures

The general preparation method of large-area, continuous, uniform, and controllable vdW heterostructure materials is provided in this paper. To obtain the preparation of MoS2/h-BN and WS2/h-BN heterostructures, MoS2 and WS2 material are directly grown on the insulating h-BN substrate by atmospheric pressure chemical vapor deposition (APCVD) method, which does not require any intermediate transfer steps. The test characterization of MoS2/h-BN and WS2/h-BN vdW heterostructure materials can be accomplished by optical microscope, AFM, Raman and PL spectroscopy. The Raman peak signal of h-BN material is stronger when the h-BN film is thicker. Compared to the spectrum of MoS2 or WS2 material on SiO2/Si substrate, the Raman and PL spectrum peak positions of MoS2/h-BN heterostructure are blue-shifted, which is due to the presence of local strain, charged impurities and the vdW heterostructure interaction. Additionally, the PL spectrum of WS2 material shows the strong emission peak at 1.96 eV, while the full width half maximum (FWHM) is only 56 meV. The sharp emission peak indicates that WS2/h-BN heterostructure material has the high crystallinity and clean interface. In addition, the peak position and shape of IPM mode characteristic peak are not obvious, which can be explained by the Van der Waals interaction of WS2/h-BN heterostructure. From the above experimental results, the preparation method of heterostructure material is efficient and scalable, which can provide the important support for the subsequent application of TMDs/h-BN heterostructure in nanoelectronics and optoelectronics.

The Optical and Microstructural Characterization of the Polymeric Thin Films with Self-Assembly Nanoparticles Prepared by Spin-Coating Techniques

anhydride-poly(ethylene glycol) co-polymer (A-PEGCP) has been synthesized from maleic anhydride, poly(ethylene glycol) and bisphenol-A diglycidyl ether without using any organic solvent. The thin films produced from A-PEGCP solution were spin-coated on ITO-coated glass. The nanoparticles are observed in the thin films. It is proposed that the nanoparticle is built by a self-assembly process with bisphenol-A aggregates and poly (ethylene glycol) moieties. The effects of concentration, thermal annealing, excitation wavelength and moisture on the optical and nanostructured characterization of the thin films are investigated in this study. Photoluminescence (PL) spectrum of the thin film on ITO-coated glass has a peak of about 450 nm that extends from 360 to 550 nm under 325 nm excitation. The increase in PL intensity is accompanied by a red shift of PL spectrum as concentration increases. Moreover, the slightly red shift of PL spectrum is also observed as annealing temperature increases. Meanwhile, PL intensity negligibly decreases with annealing temperature. The degradation in PL intensity is apparent due to moisture. The excitation-wavelength dependent photoluminescence (EWDP) is observed in the thin film. UV-Vis absorption spectra of the thin films are red-shifted with concentration due to more molecular aggregation. The highest occupied molecular orbital (HOMO) energy is −9.52 eV. The optical band-gap energy is 4.09–4.44 eV.

Probing the Optical Properties of MoS2 on SiO2/Si and Sapphire Substrates

As an important supplementary material to graphene in the optoelectronics field, molybdenum disulfide (MoS2) has attracted attention from researchers due to its good light absorption capacity and adjustable bandgap. In this paper, MoS2 layers are respectively grown on SiO2/Si and sapphire substrates by atmospheric pressure chemical vapor deposition (APCVD). Atomic force microscopy, optical microscopy, and Raman and photoluminescence spectroscopy are used to probe the optical properties of MoS2 on SiO2/Si and sapphire substrates systematically. The peak shift between the characteristic A1g and E12g peaks increases, and the I peak of the PL spectrum on the SiO2/Si substrate redshifts slightly when the layer numbers were increased, which can help in obtaining the layer number and peak position of MoS2. Moreover, the difference from monolayer MoS2 on the SiO2/Si substrate is that the B peak of the PL spectrum has a blueshift of 56 meV and the characteristic E12g peak of the Raman spectrum has no blueshift. The 1- and 2-layer MoS2 on a sapphire substrate had a higher PL peak intensity than that of the SiO2/Si substrate. When the laser wavelength is transformed from 532 to 633 nm, the position of I exciton peak has a blueshift of 16 meV, and the PL intensity of monolayer MoS2 on the SiO2/Si substrate increases. The optical properties of MoS2 can be obtained, which is helpful for the fabrication of optoelectronic devices.

Фотолюминесценция ниобата лития, легированного медью

The photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV–Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520–620 nm.