Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD)

1990 ◽  
Vol 204 ◽  
Author(s):  
C. Wang ◽  
C.H. Bjorkman ◽  
D.R. Lee ◽  
M.J. Williams ◽  
G. Lucovsky
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Thin Films ◽  
Mos Devices ◽  
Exit Port ◽  
Heavily Doped ◽  
Si Films ◽  
P Type

ABSTRACTWe have succeeded in depositing both activated n- and p-type μc-Si, by a low temperature, 250°C, remote PECVD process in which dopant gases (PH3 or B2H6)/Silane (SiH4) mixtures are injected downstream from the exit port of a He/H2 plasma. The room temperature conductivities and activation energies for the n- and p-type μc-Si are respectively, 40 S/cm with Eaa=0.018 eV, and 5 S/cm with Ea =0.040 eV. Doped μc-Si is obtained for PH3/SiH4 ratios up to 1%, and for B2H6/SiH4 ratios to 0.1%. For B2H6/SiH4 ratios < 0.1%, the deposited p-type material is doped a-Si rather than doped μc-Si. We have shown that these heavily doped μc-Si film are a viable candidate for the gate electrode in MOS devices. The application of these doped μc-Si films in p-i-n diode devices has also been studied.

¼c Silicon Thin Films Deposited by Remote Plasma Enhanced Chemical Vapor Deposition Process

1990 ◽  
Vol 192 ◽  
Author(s):  
C. Wang ◽  
G. N. Parsons ◽  
S. S. Kim ◽  
E. C. Buehler ◽  
R. J. Nemanich ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Substrate Material ◽  
Degree Of Crystallinity ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Type C ◽  
Si Films ◽  
P Type

ABSTRACTIn an earlier study, we deposited ¼c-Si thin films by reactive magnetron sputtering (RMS). Here we extend our studies to the deposition of both undoped and high conductivity N-type and P-type ¼c-Si thin films by a remote PECVD. We show that ¼c-Si films can be deposited by bringing hydrogen, H2, into the source gas mixtures. The H2 could introduced by either upstream in a He/H2 mixture and directly plasma excited, or downstream, and be remotely excited along with the silane, SiH4, feed gas. The degree of crystallinity is shown to depend on the hydrogen dilution, the substrate temperature and the substrate material.

The Properties of GaInAsSb/GaSb Heterostructure Grown by Mocvd and P-GaInAsSb/N-GaSb Photodiodes

1995 ◽  
Vol 415 ◽  
Author(s):  
Baolin Zhang ◽  
Yixin Jin ◽  
Tianming Zhou ◽  
Hong Jiang ◽  
Yongqiang Ning ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Infrared Transmission ◽  
Long Wavelength ◽  
Measurement Results ◽  
P Type ◽  
Metalorganic Chemical

ABSTRACTGaInAsSb/GaSb heterostructures have been grown by metalorganic chemical vapor deposition (MOCVD). The optical properties were characterized using low temperature(71K) photoluminescence(PL) and infrared transmission spectroscopy. The FWHM of the typical PL spectrum peaked at 2.3μm is 30meV. Hall measurement results for undoped GaInAsSb layers are presented showing a p-type background and low hole concentration of 6.5 × 1015cm−3. The room temperature performances of the p-GaInAsSb/n-GaSb photodiodes are reported. Its responsivity spectrum is peaked at 2.2 5μm and cuts off at 1.7μm in the short wavelength and at 2.4μm in the long wavelength, respectively. The room temperature detectivity D* is of 1 × 109cm.Hz1/2.W−2

Studies of MOS and Heterojunction Devices Using Doped μc-Si and a-Si

1991 ◽  
Vol 219 ◽  
Author(s):  
D. R. Lee ◽  
C. H. Bjorkman ◽  
C. Wang ◽  
G. Lucovsky
Keyword(s):  
Photovoltaic Effect ◽  
Chemical Vapor ◽  
Flat Band ◽  
Mos Capacitor ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Current Voltage ◽  
Heavily Doped ◽  
Si Films ◽  
Band Structure Model

ABSTRACTCurrent-voltage voltage characteristics of heterojunctions formed by remote plasma enhanced chemical vapor deposition (PECVD) of heavily doped μc-Si onto doped c-Si have been studied, as well as capacitance-voltage characteristics of MOS capacitor structures using heavily doped remote PECVD μc-Si and a-Si films as gate electrodes on thermally oxidized crystalline Si. Shifts in the flat-band voltages of MOS devices using the μc-Si and a-Si as gate electrodes relative to that of a reference Al/SiO2/c-Si structure are measured and explained in terms of a band structure model for the μc-Si and a-Si. Rectification and a photovoltaic effect observed in the pn heterojunctions are also explained in context of the same model.

Effect of Deposition Condition of Precursor Amorphous Silicon Thin Films on the Behavior of Milc

2001 ◽  
Vol 685 ◽  
Author(s):  
Y.-G. Yoon ◽  
G.-B. Kim ◽  
H.-H Park ◽  
S.-W Lee ◽  
S.-K. Joo
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Structural Changes ◽  
Chemical Vapor ◽  
Deposition Condition ◽  
Micro Structure ◽  
Silicon Thin Films ◽  
Lower Temperature ◽  
Si Films

AbstractWe studied on the effect of a deposition condition of precursor a-Si thin films on the shape and micro-structure of MILC. The a-Si thin films were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) with silane and hydrogen as a source gas and the deposition temperature was varied from 100 to 400∼. The a-Si films deposited at a lower temperature showed a tendency to (111) crystals and leaving some a-Si residues in MILC region, while those with higher deposition temperature tended to be crystallized to (110). These differences were explained in terms of original hydrogen content and following structural changes by the dehydrogenation during annealing.

Effect of HCl addition on the properties of p-type silicon thin films during hot-wire chemical vapor deposition

2013 ◽  
Vol 54 ◽  
pp. 85-90 ◽  
Author(s):  
Sang-Hoon Lee ◽  
Yung-Bin Chung ◽  
Sung-Soo Lee ◽  
Jae-Soo Jung ◽  
Nong-Moon Hwang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Type Silicon ◽  
Silicon Thin Films ◽  
P Type

Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si

1994 ◽  
Vol 336 ◽  
Author(s):  
Kyung Ha Lee ◽  
Byeong Yeon Moon ◽  
Yoo Chan Chung ◽  
Seung Min Lee ◽  
Sung Chul Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Hydrogen Incorporation ◽  
Ion Doping ◽  
Pressure Chemical ◽  
Si Films ◽  
P Type

ABSTRACTWe have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) Amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10−2 and > 10−4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-S.i.H. We obtained the field effect mobility of > 1 cm2/Vs for APCVD a-Si TFT using ion doped n+-layer.

Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline Si films for thin film photovoltaic applications

2012 ◽  
Vol 520 (16) ◽  
pp. 5200-5205 ◽  
Author(s):  
Hsin-Yuan Mao ◽  
Shih-Yung Lo ◽  
Dong-Sing Wuu ◽  
Bing-Rui Wu ◽  
Sin-Liang Ou ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Photovoltaic Applications ◽  
Si Films ◽  
P Type ◽  
Nanocrystalline Si
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