Copper Laser Induced Chemical Vapor Deposition of al Films

1990 ◽  
Vol 201 ◽  
Author(s):  
M. I. Yankova ◽  
W. Shanov ◽  
B. Ivanov
Keyword(s):  
Laser Power ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Single Step ◽  
Laser Power Density ◽  
Chemical Compositions ◽  
Silicon Substrates ◽  
Direct Writing ◽  
Scanning Velocity

AbstractThe focused output from a copper laser (λ = 510nm) has been used for direct writing of Al on silicon substrates by pyrolitical decomposition of trimethilaluminum (TMA). These results demonstrate that direct writing can be accomplished at room temperature by a single-step deposition process induced by a single light source. For a laser power density between 5 and 50 kW cm−2, the widths of the stripes varied between 60 and 200 μm with corresponding thickness between 0.5 and 0.8 μm. The width of the stripes proved to be independent of the scanning velocity, Vs, within the range 50 μm s−1 < Vs < 300 μm s−1. The analysis included scanning electron microscopy (SEM) to study the film morphology, a step profiler to evaluate the thicknesses and the profiles of the stripes, and energy dispersive spectroscopy (EDS) to provide their chemical compositions.

Room Temperature Uv Laser Continuous Direct Writing of Al From Tma

1987 ◽  
Vol 101 ◽  
Author(s):  
J.E. Bouree ◽  
J. Flicstein
Keyword(s):  
Light Source ◽  
Process Parameters ◽  
Room Temperature ◽  
Deposition Process ◽  
Single Step ◽  
Chemical Processing ◽  
Direct Writing ◽  
Uv Laser ◽  
Experimental Proof ◽  
P Type

ABSTRACTAluminum lines have been drawn at a writing speed of 3.8 μm/s on (100) p-type Si by UV laser-assisted chemical processing, from a flow of TMA diluted in H2. These results are the experimental proof of direct writing at room temperature due to a single-step deposition process induced by a single light source. The useful (30 μQ-cm) ohmic-type resistivity obtained depends strongly on the photolytic process parameters.

Electrical Properties of Thin Film and Bulk Diamond Treated in Hydrogen Plasma

1989 ◽  
Vol 162 ◽  
Author(s):  
Sacharia Albin ◽  
Linwood Watkins
Keyword(s):  
Natural Diamond ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Free Standing ◽  
Before And After ◽  
Type Ia ◽  
Bulk Diamond

ABSTRACTCurrent-voltage characteristics of type Ia synthetic diamond, type IIb natural diamond and free-standing diamond films were measured before and after hydrogenation. The diamond films were polycrystalline, deposited on sacrificial silicon substrates using a microwave chemical vapor deposition process. On hydrogenation, all the samples showed several orders of magnitude increase in conductivity. Hydrogenation was carried out under controlled conditions to study the changes in the I-V characteristics of the samples. The concentration of electrically active hydrogen was determined from the I-V data. Hydrogen passivation of deep traps in diamond is clearly demonstrated.

Fabrication and electrochemical characterization of super-capacitor based on three-dimensional composite structure of graphene and a vertical array of carbon nanotubes

2018 ◽  
Vol 52 (22) ◽  
pp. 3039-3044 ◽  
Author(s):  
Daniel Choi ◽  
Eui-Hyeok Yang ◽  
Waqas Gill ◽  
Aaron Berndt ◽  
Jung-Rae Park ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Composite Structure ◽  
Graphene Layer ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Vertical Array ◽  
Pressure Chemical

We have demonstrated a three-dimensional composite structure of graphene and carbon nanotubes as electrodes for super-capacitors. The goal of this study is to fabricate and test the vertically grown carbon nanotubes on the graphene layer acting as a spacer to avoid self-aggregation of the graphene layers while realizing high active surface area for high energy density, specific capacitance, and power density. A vertical array of carbon nanotubes on silicon substrates was grown by a low-pressure chemical vapor deposition process using anodized aluminum oxide nanoporous template fabricated on silicon substrates. Subsequently, a graphene layer was grown by another low-pressure chemical vapor deposition process on top of a vertical array of carbon nanotubes. The Raman spectra confirmed the successful growth of carbon nanotubes followed by the growth of high-quality graphene. The average measured capacitance of the three-dimensional composite structure of graphene-carbon nanotube was 780 µFcm−2 at 100 mVs−1.

Effect of Two-Step Deposition Process on Morphology and Optical Properties of Nanostructured Diamond Films

2013 ◽  
Vol 651 ◽  
pp. 148-153 ◽  
Author(s):  
S. Tipawan Khlayboonme ◽  
Wicharn Techitdheera ◽  
Warawoot Thowladda
Keyword(s):  
Optical Properties ◽  
Carbon Content ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Single Step ◽  
Second Step ◽  
Step Process

The morphology and optical properties of nanostructured diamond films affected by the two-step deposition process with changing CH4 concentration were investigated. The CH4 concentration was 1% for the first step and 2% for the second step. The films were prepared by chemical vapor deposition in a microwave plasma reactor with a CH4/H2 gas mixture. Nanocrystalline columnar-structured diamond film with lowering of sp2-bonded carbon content was achieved by the two-step deposition process. Unlike that of the single-step process with 1%CH4, the two-step process promoted the morphology to more uniform and smoother film. The two-step process increased the higher grain boundary as well as decreased the sp2-bonded carbon content in the film, as compared with the single-step process with 2%CH4Subscript text.

Aerosol-Assisted CVD of SnO2 Thin Films for the Room-Temperature Detection of Hydrogen Sulfide

2013 ◽  
Vol 543 ◽  
pp. 422-425
Author(s):  
Huan Liu ◽  
Min Li ◽  
Jiu Xiao Wan ◽  
Jun Zhao ◽  
Qiu Yun Fu ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Flow ◽  
Room Temperature ◽  
Gas Sensing ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Temperature Detection ◽  
Low Concentrations ◽  
Initial Resistance ◽  
Deposition Conditions

High-quality SnO2 thin-film materials capable of detecting H2S gas of low concentrations at room temperature was demonstrated in this paper. We employed aerosol-assisted chemical vapor deposition process for the deposition of SnO2 thin films on alumina substrates with pre-patterned electrodes. The gas-sensing performances of the films prepared under different deposition conditions were systematically compared and analyzed. When SnCl2·2H2O was used as the precursor, a response sensitivity of 98.4 toward 50 ppm of H2S at room temperature was achieved. At room temperatures, the resistance upon the H2S gas exposure could recover to 90% of the initial resistance of the sensor when the H2S gas flow was turned off.

Single-step synthesis of carbon nanotubes/iron/iron oxide composite films through inert-ambient CVD using ferric acetylacetonate as a precursor

RSC Advances ◽  
2015 ◽  
Vol 5 (73) ◽  
pp. 59463-59471 ◽  
Author(s):  
Pallavi Arod ◽  
S. A. Shivashankar
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Composite Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Single Step ◽  
Deposition Pressure ◽  
Iron Iron ◽  
Synthesis Of Carbon Nanotubes

Fe–Fe3O4–CNT composite thin film was obtained by single step chemical vapor deposition process using Fe(acac)3 as the sole precursor. By changing the deposition pressure, the form of carbon deposited could be changed from amorphous to CNTs.

Ion Beam Induced Chemical Vapor Deposition of Dielectric Materials

2000 ◽  
Vol 624 ◽  
Author(s):  
H.D. Wanzenboeck ◽  
A. Lugstein ◽  
H. Langfischer ◽  
E. Bertagnolli ◽  
M. Gritsch ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Dielectric Material ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Materials ◽  
Direct Writing ◽  
Scan Time

ABSTRACTDirect writing by locally induced chemical vapor deposition has been applied to direct-write tailor-made microstructures of siliconoxide for modification and repair of microelectronic circuits. Focused ion beam (FIB) tools are used for locally confined deposition of dielectric material in the deep sub-µm range. State-of-the-art procedures typically provide insufficient dielectrics with high leakage currents and low breakdown voltage. The detailed investigation of the deposition mechanisms in this study proposes an approach to significantly improve dielectric material properties. Siloxane and oxygen as volatile precursors introduced in a vacuum chamber are used to deposit siliconoxide at ambient temperatures on various substrates such as Si, GaAs, or metals. The deposition process was initiated by a focused Ga+-beam. As elementary electronic test vehicles for a systematic electrical investigation ion beam induced depositions in of capacitor architectures are applied. The chemical composition of the layers is investigated by secondary ion mass spectroscopy (SIMS) and reveals effects of atomic mixing at the interfaces. The variation of process parameters such as ion energy and ion dose, scan time and delay time lead to a better understanding of the mechanisms. The composition of the precursor gas mixture is of significant influence on insulating properties. The results demonstrate that optimized FIB-induced deposition of dielectrics offers a new window for in-situ post-processing of integrated circuits

Direct CVD Growth of Multi-Layered Graphene Closed Shells around Alumina Nanofibers

2016 ◽  
Vol 674 ◽  
pp. 77-80 ◽  
Author(s):  
Roman Ivanov ◽  
Valdek Mikli ◽  
Jakob Kübarsepp ◽  
Irina Hussainova
Keyword(s):  
Carbon Nanostructures ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Single Step ◽  
Graphene Layers ◽  
Alumina Nanofibers ◽  
Carbon Structures ◽  
Transmission Electron ◽  
Cvd Growth ◽  
Closed Shells

In this work, a catalyst-free direct deposition of multi-layered graphene closed shells around highly aligned alumina nanofibers with aspect ratio of 107 is demonstrated for the first time. A single – step chemical vapor deposition process of specified parameters was used for development of hybrid structures of carbon shells around the core alumina nanofibers. Transmission electron microscopy and Raman spectroscopy were used to confirm formation of graphene layers and to understand the morphology of the various structures. The developed routine for growth of peculiar carbon nanostructures opens new opportunities for deposition of the tailored carbon structures on dielectric substrates.

Molecular Dynamics Study of Laser and Plasma Nitriding of Titanium

2013 ◽  
Vol 135 (3) ◽  
Author(s):  
Hanjiang Yu ◽  
Tianya Tan ◽  
Wei Wu ◽  
Chao Tian ◽  
Ying An ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Power Density ◽  
Laser Power ◽  
Plasma Nitriding ◽  
Processing Parameters ◽  
Nitride Layer ◽  
Laser Power Density ◽  
Experimental Results ◽  
Good Qualitative Agreement ◽  
Scanning Velocity

The molecular dynamics (MD) method is successfully applied to simulate the nitridation of titanium by the mixing technology with laser and plasma. Based on the simulation, the influence of the processing parameters, such as the laser power density and the scanning velocity on the effective thickness of the nitride layer, was investigated. It was found that, for each scanning velocity, there is a laser power density range within which the higher laser power density has the beneficial effect for nitriding treatment. Comparing the simulation and experimental results shows that the calculated results are in good qualitative agreement with the experimental results.

Effects of Parameters on Surface Roughness of Metal Parts by Selective Laser Melting

2013 ◽  
Vol 834-836 ◽  
pp. 872-875 ◽  
Author(s):  
Qun Qin ◽  
Guang Xia Chen
Keyword(s):  
Surface Roughness ◽  
Power Density ◽  
Selective Laser Melting ◽  
Laser Power ◽  
Processing Parameters ◽  
Laser Power Density ◽  
Laser Melting ◽  
Scanning Velocity ◽  
Metal Parts ◽  
Overlap Ratio

The primary goal of this research is the effects of laser process parameters on surface roughness of metal parts built by selective laser melting. The main processing parameters used to control the surface roughness of melted layers are laser power, scanning velocity and overlap ratio. In our work, an orthogonal experimental design was employed to find the changing rules of the surface roughness through changing SLM processing parameters. The results show that the overlap ratio is the most important factor to affect the surface roughness. When the overlap ratio is below 50%, the surface roughness value of melted layers will decrease with laser power density increasing. When the overlap ratio is higher than or equal to 50%, the surface roughness value increases with the laser power density increasing. The optimal parameters of laser power 143W, scanning velocity 5m/min and overlap ratio 30% can be used to achieve melted layers with the best surface quality in our experiments, and the roughness value increases with slicing thickness increasing and the surface bias angle decreases.

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