Influence of near-surface and volume real structure on the electronic properties of SrTiO3 MIM structures

2011 ◽  
Vol 1368 ◽  
Author(s):  
J. Seibt ◽  
F. Hanzig ◽  
R. Strohmeyer ◽  
H. Stoecker ◽  
C. Himcinschi ◽  
...  
Keyword(s):  
Transition Metal Oxides ◽  
High Vacuum ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Real Structure ◽  
Near Surface ◽  
Metal Insulator Metal ◽  
Non Volatile Memory ◽  
Perovskite Type

ABSTRACTPerovskite-type transition metal oxides have great potential as storage material in resistive random-access memory (RRAM) devices. Typical non-volatile memory cells are realized in metal-insulator-metal (MIM) stacks with insulator thicknesses of few nanometers. We report on the investigation of single-crystal SrTiO3 to understand the role of volume and interface real structure for the electrical conductivity in such materials. Conductivity in SrTiO3 single crystals was established by a reducing high vacuum (HV) annealing introducing charged oxygen vacancies acting as donor centers. Titanium electrodes are evaporated on both crystal faces to obtain an MIM element.

Improved Resistive Switching Properties in HfO2-based ReRAMs by Hf/Au Doping

2012 ◽  
Vol 1394 ◽  
Author(s):  
Xiaoli He ◽  
Natalya A. Tokranova ◽  
Wei Wang ◽  
Robert E. Geer
Keyword(s):  
Resistive Switching ◽  
Transition Metal Oxides ◽  
High Speed ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Power Reduction ◽  
Cmos Process ◽  
Metal Insulator Metal ◽  
Power Operation ◽  
Process Compatibility

ABSTRACTEmerging NVM devices have been extensively studied as candidates to extend density scaling and power reduction beyond Si-based flash. Recently, resistive-random-access-memory (ReRAM) devices in the form of metal-insulator-metal (MIM) structures have attracted substantial attention due to their potential scalability, low power operation, and high speed. HfO2 is attractive compared to other transition metal oxides from the vantage point of CMOS process compatibility. Here, we investigate doped HfO2 with a Pt top electrode on an n+-Si substrate. By doping HfO2 with Hf or Au, improved resistive switching properties have been demonstrated in terms of enhanced cycling endurance and lower switching voltages for SET and RESET. The improvements were attributed to doping-induced oxygen vacancies. In addition, Cu-doped HfO2 devices have exhibited multilevel resistive switching.

scholarly journals Electrical and thermal analysis of Symmetric and Asymmetric metal contacts in Resistive Switching Devices

2021 ◽  
Author(s):  
shikha kaushik ◽  
Sujata Pandey ◽  
Rahul Singhal
Keyword(s):  
Transition Metal Oxides ◽  
Active Material ◽  
Random Access ◽  
Thermal Characteristics ◽  
Resistive Random Access Memory ◽  
Metal Contacts ◽  
Non Volatile Memory ◽  
Underlying Mechanisms ◽  
High Dielectric ◽  
Memory Applications

Abstract Resistive Random-Access Memory (ReRAM) is considered for next generation non-volatile memory applications. ReRAM has gained interest due to its simple structure, lower switching voltages, high packaging density, fast switching speeds, and feasible integration into CMOS processing. Transition-Metal-Oxides have shown to be compatible materials for RRAM applications. Among them, ZnO is one of the most promising materials owing to being fab-friendly and having a high dielectric constant of 10. ReRAM devices with ZnO as the active material are characterized and investigated in this work. Both symmetric and asymmetric metal contacts are used for designing the ReRAMs. The current-voltage and thermal characteristics of different devices are studied, and underlying mechanisms are analyzed. It was observed that the metal with low thermal conductivity, dissipates less heat and causes high temperature in the ON state. Also, a resistance ratio of the order of 1.3 x 105 is obtained, which shows the robustness of the device with an optimal memory window performance. Further, the devices are fabricated and compared with the simulated devices.

scholarly journals Overview of radiation effects on emerging non-volatile memory technologies

2017 ◽  
Vol 32 (4) ◽  
pp. 381-392
Author(s):  
Irfan Fetahovic ◽  
Edin Dolicanin ◽  
Djordje Lazarevic ◽  
Boris Loncar
Keyword(s):  
Radiation Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
High Radiation ◽  
Different Types ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Change Memory

In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.

THE FIRST PRINCIPLE STUDY OF COMPARISON OF DIVALENT AND TRIVALENT IMPURITY IN RRAM DEVICES USING GGA+U

2021 ◽  
pp. 2150039
Author(s):  
EJAZ AHMAD KHERA ◽  
HAFEEZ ULLAH ◽  
MUHAMMAD IMRAN ◽  
HASSAN ALGADI ◽  
FAYYAZ HUSSAIN ◽  
...  
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Full Potential ◽  
Generalized Gradient ◽  
Augmented Plane Wave ◽  
Generalized Gradient Approximation ◽  
Metal Insulator Metal ◽  
Structure Density ◽  
Linearized Augmented Plane Wave

Resistive switching (RS) performances had prodigious attention due to their auspicious potential for data storage. Oxide-based devices with metal insulator metal (MIM) structure are more valuable for RS applications. In this study, we have studied the effect of divalent (nickel) as well as trivalent (aluminum) dopant without and with oxygen vacancy (V[Formula: see text] in hafnia (HfO[Formula: see text]-based resistive random-access memory (RRAM) devices. All calculations are carried out within the full potential linearized augmented plane-wave (FP-LAPW) method based on the WIEN2k code by using generalized gradient approximation (GGA) and generalized gradient approximation with U Hubbard parameters (GGA+U) approach. The studies of the band structure, density of states and charge density reveal that HfNiO2+Vo are more appropriate dopant to enhance the conductivity for RRAM devices.

Role of nitrogen incorporation into Al2O3-based resistive random-access memory

2014 ◽  
Vol 7 (7) ◽  
pp. 074202 ◽  
Author(s):  
Moon Young Yang ◽  
Katsumasa Kamiya ◽  
Hiroki Shirakawa ◽  
Blanka Magyari-Köpe ◽  
Yoshio Nishi ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Nitrogen Incorporation

Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing

2020 ◽  
Vol 20 (7) ◽  
pp. 4057-4060
Author(s):  
Chien-Hung Wu ◽  
Song-Nian Kuo ◽  
Kow-Ming Chang ◽  
Yi-Ming Chen ◽  
Yu-Xin Zhang ◽  
...  
Keyword(s):  
Retention Time ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Thin Solid Films ◽  
Solid Films ◽  
Microwave Annealing ◽  
Annealing Conditions

Recently resistive random access memory (RRAM) is considered to be the most promising one to become the next generation memory since its simple Metal/Insulator/Metal (MIM) structure, lower power consumption and fabrication cost (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9(1), p.526). Due to some bottlenecks for current flash memory, such as high operation voltage, low operation speed, poor retention time and endurance, RRAM device is regarded as an alternative solution (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga–Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). In this investigation, the memory layer of RRAM device is IGZO, and it is deposited with AP-PECVD technique which can operate under atmosphere, reduce cost of the process. Microwave annealing (MWA) is used to enhance the RRAM device reliability (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga–Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). Experiment shows that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics, reliability issues such as numbers of switching cycle and data retention time are also improved (Teng, L.F., et al., 2012. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor. Applied Physics Letters, 101, p.132901).

Understanding the Role of Process Parameters on the Characteristics of Transition Metal Oxide RRAM/Memristor Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Branden Long ◽  
Yibo Li ◽  
Rashmi Jha
Keyword(s):  
Random Access ◽  
Charge Trapping ◽  
Resistive Random Access Memory ◽  
Interface State ◽  
State Density ◽  
Switching Behavior ◽  
Low Oxygen ◽  
Doping Density ◽  
Diode Behavior

ABSTRACTIn this report, we studied the role of the oxygen concentration in TiOx layer of Ni/TiOx/TiO2/Ni stack based 2-terminal resistive random access memory (RRAM) devices. The sample with oxygen deficient TiOx layer showed Schottky diode type J-V characteristics in the as-fabricated state while the sample with higher oxygen content in TiOx demonstrated MIM or back-to-back connected diode behavior. The Capacitance-Voltage (C-V) profiling was performed and doping density vs. depletion width characteristic was obtained. The conductance technique was implemented to study the interface state density. The RRAM type switching behavior of these samples was studied. The sample with high oxygen in TiOx showed filament based switching after electroforming while the sample with low oxygen in TiOx showed switching governed by the charge trapping.

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