Understanding the Role of Process Parameters on the Characteristics of Transition Metal Oxide RRAM/Memristor Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Branden Long ◽  
Yibo Li ◽  
Rashmi Jha
Keyword(s):  
Random Access ◽  
Charge Trapping ◽  
Resistive Random Access Memory ◽  
Interface State ◽  
State Density ◽  
Switching Behavior ◽  
Low Oxygen ◽  
Doping Density ◽  
Diode Behavior

ABSTRACTIn this report, we studied the role of the oxygen concentration in TiOx layer of Ni/TiOx/TiO2/Ni stack based 2-terminal resistive random access memory (RRAM) devices. The sample with oxygen deficient TiOx layer showed Schottky diode type J-V characteristics in the as-fabricated state while the sample with higher oxygen content in TiOx demonstrated MIM or back-to-back connected diode behavior. The Capacitance-Voltage (C-V) profiling was performed and doping density vs. depletion width characteristic was obtained. The conductance technique was implemented to study the interface state density. The RRAM type switching behavior of these samples was studied. The sample with high oxygen in TiOx showed filament based switching after electroforming while the sample with low oxygen in TiOx showed switching governed by the charge trapping.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 451-455 ◽  
Author(s):  
Kosuke Muraoka ◽  
Seiji Ishikawa ◽  
Hiroshi Sezaki ◽  
Tomonori Maeda ◽  
Shinichiro Kuroki
Keyword(s):  
Oxygen Concentration ◽  
Barrier Layer ◽  
Gate Oxide ◽  
Interface State ◽  
State Density ◽  
Conduction Band Edge ◽  
Low Oxygen ◽  
Barrier Layer Thickness ◽  
Thick Barrier ◽  
Thin Gate Oxide

A thickness of Ba-introduced gate oxide was controlled with the oxygen concentration and a barrier layer thickness at a post-deposition annealing. The oxidation rate becomes slower with the low oxygen concentration and the thick barrier layer, and the thin oxide of 12 nm was realized with O2 5% and 9 nm of the barrier layer. This Ba-introduced thin gate oxide resulted in the field effect mobility of 13 cm2/Vs and the interface state density of 2×1011 cm-2eV-1 at 0.25 eV below the conduction band edge of 4H-SiC.

Role of nitrogen incorporation into Al2O3-based resistive random-access memory

2014 ◽  
Vol 7 (7) ◽  
pp. 074202 ◽  
Author(s):  
Moon Young Yang ◽  
Katsumasa Kamiya ◽  
Hiroki Shirakawa ◽  
Blanka Magyari-Köpe ◽  
Yoshio Nishi ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Nitrogen Incorporation

scholarly journals Insertion of a Graphene Oxide Layer into a Cu/SiO2/Pt Structure to Overcome Performance Degradation in a Vaporless Environment

2019 ◽  
Vol 9 (7) ◽  
pp. 1432
Author(s):  
Chih-Yi Liu ◽  
Chun-Hung Lai ◽  
Chao-Cheng Lin ◽  
Chih-Peng Yang
Keyword(s):  
Graphene Oxide ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Photoelectron Spectra ◽  
Switching Behavior ◽  
Schematic Model ◽  
Access Memory ◽  
Electrical Field ◽  
Pt Electrode ◽  
Cu Ions

A Cu/SiO2/Pt structure is usually used to study the resistive memory properties of an electrochemical resistive random access memory. It can be reversibly switched between low- and high-resistance states by using DC voltages in the atmosphere. However, its resistive switching behavior disappears in a vaporless environment because no conducting filaments can be formed within the Cu/SiO2/Pt structure. This study inserted a graphene oxide (GO) layer to fabricate a Cu/GO/SiO2/Pt structure that could be resistively switched in a vaporless environment. The X-ray photoelectron spectra depth profile of the Cu/GO/SiO2/Pt structure showed that oxygen-related groups of the GO film reacted with the Cu electrode. The GO film assisted Cu ionization in a vaporless environment, and Cu ions could migrate in an electrical field to the Pt electrode. Cu conducting filaments were formed and ruptured by different polarity voltages, and the resistance of the Cu/GO/SiO2/Pt structure could be reversibly switched in a vaporless environment. A schematic model was proposed to explain the switching mechanisms in the atmosphere and a vaporless environment.

Reliability of Atmosphere Pressure-Plasma Enhanced Chemical Vapor Deposition Deposited Indium Gallium Zinc Oxide Resistive Random Access Memory Device with Microwave Annealing

2020 ◽  
Vol 20 (7) ◽  
pp. 4057-4060
Author(s):  
Chien-Hung Wu ◽  
Song-Nian Kuo ◽  
Kow-Ming Chang ◽  
Yi-Ming Chen ◽  
Yu-Xin Zhang ◽  
...  
Keyword(s):  
Retention Time ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Thin Solid Films ◽  
Solid Films ◽  
Microwave Annealing ◽  
Annealing Conditions

Recently resistive random access memory (RRAM) is considered to be the most promising one to become the next generation memory since its simple Metal/Insulator/Metal (MIM) structure, lower power consumption and fabrication cost (Meena, J.S., et al., 2014. Overview of emerging nonvolatile memory technologies. Nanoscale Research Letters, 9(1), p.526). Due to some bottlenecks for current flash memory, such as high operation voltage, low operation speed, poor retention time and endurance, RRAM device is regarded as an alternative solution (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga–Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). In this investigation, the memory layer of RRAM device is IGZO, and it is deposited with AP-PECVD technique which can operate under atmosphere, reduce cost of the process. Microwave annealing (MWA) is used to enhance the RRAM device reliability (Fuh, C.S., et al., 2011. Role of environmental and annealing conditions on the passivation-free In–Ga–Zn–O TFT. Thin Solid Films, 520, pp.1489–1494). Experiment shows that with appropriate MWA treatment, the IGZO RRAM device exhibits better electrical characteristics, reliability issues such as numbers of switching cycle and data retention time are also improved (Teng, L.F., et al., 2012. Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor. Applied Physics Letters, 101, p.132901).

scholarly journals Surface effects of electrode-dependent switching behavior of resistive random-access memory

2016 ◽  
Vol 109 (13) ◽  
pp. 131603 ◽  
Author(s):  
Jr-Jian Ke ◽  
Tzu-Chiao Wei ◽  
Dung-Sheng Tsai ◽  
Chun-Ho Lin ◽  
Jr-Hau He
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Surface Effects ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory

Correlation Between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory

2010 ◽  
Vol 1250 ◽  
Author(s):  
Yusuke Nishi ◽  
Tatsuya Iwata ◽  
Tsunenobu Kimoto
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Resistance Switching ◽  
Admittance Spectroscopy ◽  
Low Oxygen ◽  
Access Memory ◽  
Switching Operation ◽  
Defect Levels

AbstractAdmittance spectroscopy measurement has been performed on NiOx thin films with various oxygen compositions (x=1.0-1.2) in order to characterize localized defect levels. The activation energy and concentration of localized defect levels in NiOx films with low oxygen composition (x≤1.07) are 120-170 meV and lower than 2×1019 cm-3, respectively. From I-V measurement of the Pt/NiOx/Pt structures, samples with high oxygen composition (x≥1.10) did not show resistance switching operation, while samples with low oxygen composition (x≤1.07) did. The best oxygen composition of NiOx thin films turned out to be 1.07 in order to realize repeatable and stable resistance switching operation.

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