Improved Resistive Switching Properties in HfO2-based ReRAMs by Hf/Au Doping

2012 ◽  
Vol 1394 ◽  
Author(s):  
Xiaoli He ◽  
Natalya A. Tokranova ◽  
Wei Wang ◽  
Robert E. Geer
Keyword(s):  
Resistive Switching ◽  
Transition Metal Oxides ◽  
High Speed ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Power Reduction ◽  
Cmos Process ◽  
Metal Insulator Metal ◽  
Power Operation ◽  
Process Compatibility

ABSTRACTEmerging NVM devices have been extensively studied as candidates to extend density scaling and power reduction beyond Si-based flash. Recently, resistive-random-access-memory (ReRAM) devices in the form of metal-insulator-metal (MIM) structures have attracted substantial attention due to their potential scalability, low power operation, and high speed. HfO2 is attractive compared to other transition metal oxides from the vantage point of CMOS process compatibility. Here, we investigate doped HfO2 with a Pt top electrode on an n+-Si substrate. By doping HfO2 with Hf or Au, improved resistive switching properties have been demonstrated in terms of enhanced cycling endurance and lower switching voltages for SET and RESET. The improvements were attributed to doping-induced oxygen vacancies. In addition, Cu-doped HfO2 devices have exhibited multilevel resistive switching.

Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides

2014 ◽  
Vol 95 ◽  
pp. 84-90 ◽  
Author(s):  
Takumi Moriyama ◽  
Ryosuke Koishi ◽  
Kouhei Kimura ◽  
Satoru Kishida ◽  
Kentaro Kinoshita
Keyword(s):  
Resistive Switching ◽  
Transition Metal Oxides ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Clear Correlation ◽  
Value Of Time ◽  
Electrical Measurements ◽  
Access Memory ◽  
Time Required

Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset)? Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters are still unclear. In this paper, we extracted treset, Vreset, RL and Treset at the same time by combining two electrical measurements. As a result, we found a clear correlation between Vreset, RL, and Treset, meaning that each parameter can not be controlled independently. Tresetincreases not only with increasing Vresetbut also with increasing RL, which suggests the necessity of introducing ununiformly-shaped filamens and resistive switching takes place at the narrowing part of the filament.

Influence of near-surface and volume real structure on the electronic properties of SrTiO3 MIM structures

2011 ◽  
Vol 1368 ◽  
Author(s):  
J. Seibt ◽  
F. Hanzig ◽  
R. Strohmeyer ◽  
H. Stoecker ◽  
C. Himcinschi ◽  
...  
Keyword(s):  
Transition Metal Oxides ◽  
High Vacuum ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Real Structure ◽  
Near Surface ◽  
Metal Insulator Metal ◽  
Non Volatile Memory ◽  
Perovskite Type

ABSTRACTPerovskite-type transition metal oxides have great potential as storage material in resistive random-access memory (RRAM) devices. Typical non-volatile memory cells are realized in metal-insulator-metal (MIM) stacks with insulator thicknesses of few nanometers. We report on the investigation of single-crystal SrTiO3 to understand the role of volume and interface real structure for the electrical conductivity in such materials. Conductivity in SrTiO3 single crystals was established by a reducing high vacuum (HV) annealing introducing charged oxygen vacancies acting as donor centers. Titanium electrodes are evaporated on both crystal faces to obtain an MIM element.

scholarly journals Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Process

Metals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 772
Author(s):  
Seunghyun Kim ◽  
Osung Kwon ◽  
Hojeong Ryu ◽  
Sungjun Kim
Keyword(s):  
Resistive Switching ◽  
Silicon Substrate ◽  
Photoelectron Spectroscopy ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Alloy Type ◽  
Switching Type ◽  
Neuromorphic System ◽  
Device Properties ◽  
Partial Reset

This work demonstrates the synaptic properties of the alloy-type resistive random-access memory (RRAM). We fabricated the HfAlOx-based RRAM for a synaptic device in a neuromorphic system. The deposition of the HfAlOx film on the silicon substrate was verified by X-ray photoelectron spectroscopy (XPS) analysis. It was found that both abrupt and gradual resistive switching could be implemented, depending on the reset stop voltage. In the reset process, the current gradually decreased at weak voltage, and at strong voltage, it tended to decrease rapidly by Joule heating. The type of switching determined by the first reset process was subsequently demonstrated to be stable switching by successive set and reset processes. A gradual switching type has a much smaller on/off window than abrupt switching. In addition, retention maintained stability up to 2000 s in both switching cases. Next, the multiple current states were tested in the gradual switching case by identical pulses. Finally, we demonstrated the potentiation and depression of the Cu/HfAlOx/Si device as a synapse in an artificial neural network and confirmed that gradual resistive switching was suitable for artificial synapses, using neuromorphic system simulation.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Resistive Switching Characteristics in TiO2 ReRAM with Top Electrode of Co Selectively Formed on SAMs Printed Patterns

2007 ◽  
Vol 124-126 ◽  
pp. 603-606
Author(s):  
Sang Hee Won ◽  
Seung Hee Go ◽  
Jae Gab Lee
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Atomic Layer ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Tio2 Thin Films ◽  
Selective Deposition ◽  
Precise Control ◽  
Resistance State ◽  
Switching Characteristics

Simple process for the fabrication of Co/TiO2/Pt resistive random access memory, called ReRAM, has been developed by selective deposition of Co on micro-contact printed (μ-CP) self assembled monolayers (SAMs) patterns. Atomic Layer Deposition (ALD) was used to deposit TiO2 thin films, showing its ability of precise control over the thickness of TiO2, which is crucial to obtain proper resistive switching properties of TiO2 ReRAM. The fabrication process for Co/TiO2/Pt ReRAM involves the ALD of TiO2 on sputter-deposited Pt bottom electrode, followed by μ-CP with SAMs and then selective deposition of Co. This results in the Co/TiO2/Pt structure ReRAM. For comparison, Pt/TiO2/Pt ReRAM was produced and revealing the similar switching characteristics as that of Co/TiO2/Pt, thus indicating the feasibility of Co replacement with Pt top electrode. The ratios between the high-resistance state (Off state) and the low-resistance state (On state) were larger than 102. Consequently, the selective deposition of Co with μ-CP, newly developed in this study, can simplify the process and thus implemented into the fabrication of ReRAM.

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

Reliable analog resistive switching behaviors achieved using memristive devices in AlOx/HfOx bilayer structure for neuromorphic systems

2021 ◽  
Author(s):  
Meng Qi ◽  
Tianquan Fu ◽  
Huadong Yang ◽  
ye tao ◽  
Chunran Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Learning Experience ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Spike Timing ◽  
Information Storage ◽  
Bilayer Structure ◽  
Neuromorphic Computing ◽  
Von Neumann ◽  
Simulation Based

Abstract Human brain synaptic memory simulation based on resistive random access memory (RRAM) has an enormous potential to replace traditional Von Neumann digital computer thanks to several advantages, including its simple structure, high-density integration, and the capability to information storage and neuromorphic computing. Herein, the reliable resistive switching (RS) behaviors of RRAM are demonstrated by engineering AlOx/HfOx bilayer structure. This allows for uniform multibit information storage. Further, the analog switching behaviors are capable of imitate several synaptic learning functions, including learning experience behaviors, short-term plasticity-long-term plasticity transition, and spike-timing-dependent-plasticity (STDP). In addition, the memristor based on STDP learning rules are implemented in image pattern recognition. These results may offer a promising potential of HfOx-based memristors for future information storage and neuromorphic computing applications.

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