scholarly journals An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margin

2016 ◽  
Vol 108 (3) ◽  
pp. 033505 ◽  
Author(s):  
Simone Cortese ◽  
Ali Khiat ◽  
Daniela Carta ◽  
Mark E. Light ◽  
Themistoklis Prodromakis
Keyword(s):  
Titanium Dioxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Metal Insulator ◽  
Metal Insulator Metal

TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application

2011 ◽  
Vol 109 (3) ◽  
pp. 033712 ◽  
Author(s):  
Jungho Shin ◽  
Insung Kim ◽  
Kuyyadi P. Biju ◽  
Minseok Jo ◽  
Jubong Park ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Cross Point ◽  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals Nature of the Interstitials in Titanium Dioxide and Their Impact on Transmission Coefficient:Ab InitioCalculations

2015 ◽  
Vol 2015 ◽  
pp. 1-9
Author(s):  
Lei Li ◽  
Changfu Xia ◽  
Wenshi Li ◽  
Aimin Ji ◽  
Canyan Zhu ◽  
...  
Keyword(s):  
Titanium Dioxide ◽  
Ab Initio ◽  
Transport Properties ◽  
Transport Coefficients ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
High Concentration ◽  
Access Memory ◽  
Excess Electrons

Theab initiocalculations about the properties of the interstitials doping in the rutile TiO2and their impact on the transport coefficients are reported. As the doping of the Zr or Ti interstitials in the TiO2, the lattice Ti4+ions acquire the excess electrons so reduced to the Ti3+or Ti2+ions. However, the Cu interstitials could not lose enough electrons to reduce the lattice Ti4+ions. Furthermore, the Ti or Cu interstitials in the ZrO2also are unable to promote the lattice Zr4+ions to form the lattice Zr3+or Zr2+ions. The high transport coefficients are observed in the defected TiO2with the Ti or Zr interstitials as the high concentration of the Ti3+or Ti2+ions. So, the Zr interstitials are the favorable choice for the extra-doping to improve the transport properties in the TiO2-based resistive random access memory.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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