scholarly journals Correlation between filament distribution and resistive switching properties in resistive random access memory consisting of binary transition-metal oxides

AIP Advances ◽  
2012 ◽  
Vol 2 (2) ◽  
pp. 022141 ◽  
Author(s):  
Hayato Tanaka ◽  
Kentaro Kinoshita ◽  
Masataka Yoshihara ◽  
Satoru Kishida
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Resistive Switching ◽  
Transition Metal Oxides ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

2011 ◽  
Vol 22 (25) ◽  
pp. 254029 ◽  
Author(s):  
Blanka Magyari-Köpe ◽  
Mihir Tendulkar ◽  
Seong-Geon Park ◽  
Hyung Dong Lee ◽  
Yoshio Nishi
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Resistive Switching ◽  
Transition Metal Oxides ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides

2014 ◽  
Vol 95 ◽  
pp. 84-90 ◽  
Author(s):  
Takumi Moriyama ◽  
Ryosuke Koishi ◽  
Kouhei Kimura ◽  
Satoru Kishida ◽  
Kentaro Kinoshita
Keyword(s):  
Resistive Switching ◽  
Transition Metal Oxides ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Clear Correlation ◽  
Value Of Time ◽  
Electrical Measurements ◽  
Access Memory ◽  
Time Required

Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset)? Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters are still unclear. In this paper, we extracted treset, Vreset, RL and Treset at the same time by combining two electrical measurements. As a result, we found a clear correlation between Vreset, RL, and Treset, meaning that each parameter can not be controlled independently. Tresetincreases not only with increasing Vresetbut also with increasing RL, which suggests the necessity of introducing ununiformly-shaped filamens and resistive switching takes place at the narrowing part of the filament.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

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