Electrodeposition of Fe–Co Alloys into Nanoporous p-type Silicon: Influence of the Electrolyte Composition

2002 ◽  
Vol 17 (5) ◽  
pp. 1074-1084 ◽  
Author(s):  
F. Hamadache ◽  
J-L. Duvail ◽  
V. Scheuren ◽  
L. Piraux ◽  
C. Poleunis ◽  
...  

The cathodic deposition of iron–cobalt alloys inside the pores of anodically formed nanoporous silicon (PS) from p-type Si substrate is investigated with respect to the electrolyte composition. The samples were characterized by scanning electron microscopy, energy dispersive spectrometry, Auger electron spectroscopy, and Fourier transform infrared spectroscopy. Results showed that the nucleation of pure cobalt started at the bottom of the pores and the nucleation of pure iron occurred all over the pore walls, leading to a preferential deposition on top surface of the porous layer. Nevertheless, a low concentration of Co2+ ions (5 at.%) in the electrolyte drastically improved the penetration of iron into the pores. As a result, a good filling of the pores with Co metal as well as with Fe–Co alloys was achieved. It was also shown that the deposition process oxidizes the structure mainly at the pore walls. The results of our investigation indicate that the mechanisms occurring during the electrodeposition of metals on porous p-type silicon substrates are completely different depending on the kind of electrolyte used: pure iron-based electrolyte or cobalt-based solutions. A complete understanding of the deposition process requires further analyses of the carrier transport in PS and of the charge exchange at the Si/electrolyte and PS/electrolyte interfaces. These new results involving the deposition of iron-group materials into porous p-type silicon are useful for future silicon technologies.

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis

1999 ◽  
Vol 138-139 ◽  
pp. 29-34
Author(s):  
R.S Videira ◽  
R.M Gamboa ◽  
J.Maia Alves ◽  
J.M Serra ◽  
A.M Vallera

2006 ◽  
Vol 78 (17) ◽  
pp. 6019-6025 ◽  
Author(s):  
Jalal Ghilane ◽  
Fanny Hauquier ◽  
Bruno Fabre ◽  
Philippe Hapiot

2013 ◽  
Vol 34 (6) ◽  
pp. 1845-1847 ◽  
Author(s):  
Seung-Hoon Lee ◽  
Muncheol Shin ◽  
Seongpil Hwang ◽  
Sung Heum Park ◽  
Jae-Won Jang

2005 ◽  
Vol 869 ◽  
Author(s):  
Cody Washburn ◽  
Daniel Brown ◽  
Jay Cabacungan ◽  
Jayanti Venkataraman ◽  
Santosh K. Kurinec

AbstractInductors are important components of analog circuit designs, from matching circuitry to passive filters. In this study, the application of electrophoretically deposited nano-ferrite material has been investigated as a technique to increase the inductance of integrated copper planar inductors fabricated using copper plating and chemical mechanical planarization. Sintered Mn-Zn ferrite particles are suspended in a medium of isopropyl alcohol with magnesium nitrate and lanthanum nitrate salts. The transportation of the particles to the substrate surface is assisted by applied electric field and particles adhere to the substrate surface by a glycerol based surfactant. Electrophorectic deposition process forms a self aligned polymeric thin film on the surface of a p-type silicon substrate selectively with respect to copper. This ferrite deposition method yields high selectivity to the inductor coils and patterned silicon substrates compatible with standard silicon technology.


2006 ◽  
Vol 88 (9) ◽  
pp. 091911 ◽  
Author(s):  
J. W. Shin ◽  
J. Y. Lee ◽  
T. W. Kim ◽  
Y. S. No ◽  
W. J. Cho ◽  
...  

1982 ◽  
Vol 13 ◽  
Author(s):  
A. S. Wakita ◽  
T. W. Sigmon ◽  
J. F. Gibbons

ABSTRACT4He+ Backscattering and SIMS were used to study impurity redistribution during laser formation of refractory silicides. Thin films of Mo and W were evaporated on to <100> p-type silicon substrates, which were As or B implanted to doses of 1 ×1015 to 1 ×1016cm−2 . These samples were laser reacted with multiple or single laser scans at various powers. Analysis of these films indicate impurity movement into the forming silicide layer. Impurity concentrations in the films were observed to be as high as 7.8×1020 cm−3−> for As in WSi2 , however a reduction in this concentration occurred with subsequent thermal annealing.


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