Impurity Redistribution Studies on Laser-Formed Silicides

1982 ◽  
Vol 13 ◽  
Author(s):  
A. S. Wakita ◽  
T. W. Sigmon ◽  
J. F. Gibbons
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Silicon Substrates ◽  
Type Silicon ◽  
Silicide Layer ◽  
Single Laser ◽  
P Type ◽  
Subsequent Thermal Annealing ◽  
Impurity Redistribution

ABSTRACT4He+ Backscattering and SIMS were used to study impurity redistribution during laser formation of refractory silicides. Thin films of Mo and W were evaporated on to <100> p-type silicon substrates, which were As or B implanted to doses of 1 ×1015 to 1 ×1016cm−2 . These samples were laser reacted with multiple or single laser scans at various powers. Analysis of these films indicate impurity movement into the forming silicide layer. Impurity concentrations in the films were observed to be as high as 7.8×1020 cm−3−> for As in WSi2 , however a reduction in this concentration occurred with subsequent thermal annealing.

Electrochemically Deposited Cobalt Thin Films on p‐Type Silicon and Its Characterization

1995 ◽  
Vol 142 (11) ◽  
pp. 3889-3892 ◽  
Author(s):  
C. Wisniewski ◽  
I. Denicoló ◽  
I. A. Hümmelgen
Keyword(s):  
Thin Films ◽  
Type Silicon ◽  
Electrochemically Deposited ◽  
Cobalt Thin Films ◽  
P Type

The Sensitivity of V2O5:Sm2O3 Thin Films against NO2 Toxic Gas

2021 ◽  
Vol 19 (3) ◽  
pp. 69-77
Author(s):  
A.J. Noori ◽  
R.A. Ahmed ◽  
I.M. Ibrahim
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Homogeneous Distribution ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Method ◽  
Operation Temperature ◽  
Best Response ◽  
Diffraction Peaks ◽  
P Type

Vanadium oxide V2O5 thin films with variation doping ratios of Sm2O5 (2, 4, 6, and 8 % wt.) on corn glass and p- type silicon substrates were prepared by pulsed laser method. The X-ray diffraction peaks for V2O5 decreases with doping ratio of Sm2O3. FESEM images for V2O5 and doped thin films illustrates clusters with a homogeneous distribution in nano scale. The energy gap varied upon the increment of doping concentration, starting from 2.610 eV to 2.7 eV. Gas sensor measurement of pure and doped V2O5 demonstrated a sensitivity to NO2 gas, and the sensitivity expanded upon the increment of operation temperature. The greatest sensitivity was found to be about 99%, while best response time of 10s and recovery time of 18s were recorded using the 4% Sm2O3 sample at 50 °C.

Rapid thermal annealing induced the c-axis (00 l) preferred orientation and the p-type thermoelectric properties of Bi-Sb-Te thin films

2020 ◽  
Vol 706 ◽  
pp. 138094 ◽  
Author(s):  
Athorn Vora–ud ◽  
Somporn Thaowonkaew ◽  
Jessada Khajonrit ◽  
Kunchit Singsoog ◽  
Pennapa Muthitamongkol ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Thermoelectric Properties ◽  
Rapid Thermal Annealing ◽  
Preferred Orientation ◽  
P Type

Study of nanoparticles TiO2 thin films on p-type silicon substrate using different alcoholic solvents

2016 ◽  
Author(s):  
A. K. M. Muaz ◽  
U. Hashim ◽  
M. K. Md. Arshad ◽  
A. R. Ruslinda ◽  
R. M. Ayub ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Tio2 Thin Films ◽  
Type Silicon ◽  
P Type

scholarly journals Incorporation of Iron Cations Into Epitaxial Sapphire Thin Films by CO-Evaporation and Subsequent Thermal Annealing

1994 ◽  
Vol 341 ◽  
Author(s):  
Ning Yu ◽  
Harriet Kung ◽  
Michael Nastasi ◽  
DeQuan Li
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Ultra Violet ◽  
Cation Sublattice ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Simple Method ◽  
Subsequent Thermal Annealing

AbstractIron-doped sapphire thin films have been successfully epitaxially grown onto sapphire single crystal substrates by electron beam deposition and subsequent thermal annealing. Amorphous A12O3 thin films, about 280–390 nm thick, cation doped with iron have been deposited on [0001] oriented sapphire substrates. Iron doping with cation concentrations (a ratio of Fe content to total cation content) up to 5 at.% can be incorporated into the octahedral sites of Al-cation sublattice during the epitaxial regrowth process at 1000–1400 C, as determined by Rutherford Backscattering Spectrometry and ion channeling measurements. Cross-sectional Transmission Electron Microscopy shows the presence of two distinct regions in the annealed films. One exhibits the epitaxial relationship with the sapphire substrate and the second region has amorphous type of contrast. External optical transmittance measurements in the ultra violet and visible light range have exhibited the absorption associated with Fe3+. This study has demonstrated a simple method of incorporating dopants into single crystal sapphire, which has potential in the fabrications of thin film planar optical waveguiles.

Surface Morphology and Compositional Analysis of Undoped Amorphous Carbon Thin Films via Bias Assisted Pyrolysis-CVD

2013 ◽  
Vol 667 ◽  
pp. 468-476 ◽  
Author(s):  
A. Ishak ◽  
K. Dayana ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Amorphous Carbon ◽  
Palm Oil ◽  
Compositional Analysis ◽  
Silicon Surfaces ◽  
Silicon Substrates ◽  
Negative Bias ◽  
Electron Microscopic ◽  
P Type

Amorphous carbon (a:C) were successfully deposited on the silicon surfaces via bias assisted pyrolysis-CVD in the range between 350oC to 500oC with constant of negative bias -50V in 1 hour deposition. The heated of palm oil at about 150oC was vaporized then used for deposited onto p-type silicon substrates. The deposited thin films were characterized by using field emission scanning electron microscopic (FESEM), energy dispersive analyser x-ray (EDAX). We have found carbon element at about 0.15 keV from EDAX with surface morphology formed a nano-ball like structure at 450oC of palm oil precursor. These results indicated deformation of physical and structural thin films caused by applied negative bias and the temperature.

Integrated Processinyg of Silicided Shallow Junctions using Rapid Thermal Annealing Prior to Dopant Activation

1989 ◽  
Vol 146 ◽  
Author(s):  
Leonard Rubin ◽  
Nicole Herbots ◽  
JoAnne Gutierrez ◽  
David Hoffman ◽  
Di Ma
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Sheet Resistivity ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
Silicide Layer ◽  
Low Leakage ◽  
Sputter Deposited

ABSTRACTA method for producing shallow silicided diodes for MOS devices (with junction depths of about 0.1 µm), by implanting after forming the silicide layer was investigated. The key to this integrated process is the use of rapid thermal annealing (RTA) to activate the dopants in the silicon, so that there is very little thermal broadening of the implant distribution. Self-aligned titanium silicide (TiSi2) films with thicknesses ranging from 40 to 80 nm were grown by RTA of sputter deposited titanium films on silicon substrates. After forming the TiSi2, arsenic and boron were implanted. A second RTA step was used after implantation to activate these dopants. It was found that implanting either dopant caused a sharp increase in the sheet resistivity of the TiSi2. The resistivity can be easily restored to its original value (about 18 µΩ-cm) by a post implant RTA anneal. RBS analysis showed that arsenic diffuses rapidly in the TiSi2 during RTA at temperatures as low as 600°C. SIMS data indicated that boron was not mobile up to temperatures of 900°C, possibly because it forms a compound with the titanium which precipitates in the TiSi 2. Coalescence of TiSi2 occurs during post implant furnace annealing, leading to an increase in the sheet resistivity. The amount of coalescence depends on the film thickness, but not on whether or not the film had been subject to implantation. Spreading resistance profiling data showed that both arsenic and boron diffused into the TiSi2 during furnace annealing, reducing the surface concentrations of dopant at the TiSi2/Si interface. Both N+/P and P+/N diodes formed by this technique exhibited low leakage currents after the second RTA anneal. This is attributed to removal of the implant damage by the RTA. In summary, the second RTA serves the dual purpose of removing implant damage in the TiSi2 and creating the shallow junction by dopant activation.

INFLUENCE OF OXYGEN IMPURITY ON SEEBECK COEFFICIENT OF NANOSCALE MnSi1.7 FILMS

2009 ◽  
Vol 23 (20n21) ◽  
pp. 2421-2427 ◽  
Author(s):  
Q. R. HOU ◽  
Y. B. CHEN ◽  
Y. J. HE
Keyword(s):  
Electron Beam ◽  
Transition Temperature ◽  
Seebeck Coefficient ◽  
Thermal Annealing ◽  
Oxygen Content ◽  
Layer Structure ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
Oxygen Impurity ◽  
P Type

Nano-scale MnSi 1.7 films are prepared by thermal annealing of three-layer Si / MnSi x/ Si or bi-layer Si / MnSi x (x < 1.7) structures at 923 K for 20–65 minutes. These layers are deposited on thermally oxidized silicon substrates at about 393 K by electron beam evaporation. It is found that the oxygen content in the MnSi 1.7 film can be reduced from about 10 at.% to 6 at.% by using the bi-layer structure MnSi x/ Si with the MnSi x layer on top. With the reduction of oxygen content in the MnSi 1.7 film, the transition temperature from p-type to n-type decreases from 508 K to 463 K or less.

Sign in / Sign up

Export Citation Format

Share Document