scholarly journals Comparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneously

2006 ◽  
Vol 24 (6) ◽  
pp. 2049-2053 ◽  
Author(s):  
Tsung-Miau Wang ◽  
Chia-Hua Chang ◽  
Shu-Jau Chang ◽  
Jenn-Gwo Hwu
Keyword(s):  
Silicon Substrates ◽  
Saturation Current ◽  
Silicon Oxides ◽  
Type Silicon ◽  
Current Characteristics ◽  
P Type

DIODE CHARACTERISTICS OF YBa2Cu3O7/n- TYPE SILICON CONTACTS

1988 ◽  
Vol 02 (11n12) ◽  
pp. 1303-1308 ◽  
Author(s):  
S. HÄCKEL ◽  
J. DONEIT ◽  
A. PINKOWSKI ◽  
W.J. LORENZ
Keyword(s):  
Reference Substance ◽  
Saturation Current ◽  
Low Frequencies ◽  
Temperature Coefficients ◽  
Type Silicon ◽  
Superconducting Ceramics ◽  
Temperature Dependences ◽  
Type Semiconductor ◽  
Diffusion Voltage ◽  
P Type

The temperature dependences of diode characteristics were measured on high-T c -superconducting YBa 2 Cu 3 O 7 (polycrystalline)/n-type silicon (monocrystalline) contacts using a common two-pole-technique at low frequencies. The non-superconducting p-type semiconductor YBa 2 Cu 3 O 6.5 (polycrystalline) served as a reference substance. The temperature coefficients of the diffusion voltage, the diffusion current and the saturation current were found to be finite at T>T c , but almost zero at T≤T c . At T=78 K , the diffusion voltage of the diode YBa 2 Cu 3 O 7/n-type silicon was about 200 mV lower as compared to that of the reference diode YBa 2 Cu 3 O 6.5/n-type silicon. The observed phenomena are explained in terms of different charge carrier behavior in the superconducting ceramics above and below T c .

Photodefined etching of n+ layers diffused on p-type silicon substrates

1999 ◽  
Vol 138-139 ◽  
pp. 29-34
Author(s):  
R.S Videira ◽  
R.M Gamboa ◽  
J.Maia Alves ◽  
J.M Serra ◽  
A.M Vallera
Keyword(s):  
Silicon Substrates ◽  
Type Silicon ◽  
P Type

Scanning Electrochemical Microscopy Investigations of Monolayers Bound to p-Type Silicon Substrates

2006 ◽  
Vol 78 (17) ◽  
pp. 6019-6025 ◽  
Author(s):  
Jalal Ghilane ◽  
Fanny Hauquier ◽  
Bruno Fabre ◽  
Philippe Hapiot
Keyword(s):  
Scanning Electrochemical Microscopy ◽  
Silicon Substrates ◽  
Type Silicon ◽  
P Type ◽  
Electrochemical Microscopy

scholarly journals Correlation Between Lateral Photovoltaic Effect and Conductivity in p-type Silicon Substrates

2013 ◽  
Vol 34 (6) ◽  
pp. 1845-1847 ◽  
Author(s):  
Seung-Hoon Lee ◽  
Muncheol Shin ◽  
Seongpil Hwang ◽  
Sung Heum Park ◽  
Jae-Won Jang
Keyword(s):  
Photovoltaic Effect ◽  
Silicon Substrates ◽  
Type Silicon ◽  
P Type

Growth mechanisms of thin-film columnar structures in zinc oxide on p-type silicon substrates

2006 ◽  
Vol 88 (9) ◽  
pp. 091911 ◽  
Author(s):  
J. W. Shin ◽  
J. Y. Lee ◽  
T. W. Kim ◽  
Y. S. No ◽  
W. J. Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Silicon Substrates ◽  
Growth Mechanisms ◽  
Type Silicon ◽  
P Type

Impurity Redistribution Studies on Laser-Formed Silicides

1982 ◽  
Vol 13 ◽  
Author(s):  
A. S. Wakita ◽  
T. W. Sigmon ◽  
J. F. Gibbons
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Silicon Substrates ◽  
Type Silicon ◽  
Silicide Layer ◽  
Single Laser ◽  
P Type ◽  
Subsequent Thermal Annealing ◽  
Impurity Redistribution

ABSTRACT4He+ Backscattering and SIMS were used to study impurity redistribution during laser formation of refractory silicides. Thin films of Mo and W were evaporated on to <100> p-type silicon substrates, which were As or B implanted to doses of 1 ×1015 to 1 ×1016cm−2 . These samples were laser reacted with multiple or single laser scans at various powers. Analysis of these films indicate impurity movement into the forming silicide layer. Impurity concentrations in the films were observed to be as high as 7.8×1020 cm−3−> for As in WSi2 , however a reduction in this concentration occurred with subsequent thermal annealing.

Decrease in Minority Carrier Lifetime of Crystalline Silicon Caused by Rapid Heating

2012 ◽  
Vol 1426 ◽  
pp. 353-358
Author(s):  
Toshiyuki Sameshima ◽  
Kochi Betsuin ◽  
Shinya Yoshidomi
Keyword(s):  
Laser Heating ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Rapid Heating ◽  
Silicon Substrates ◽  
Light Illumination ◽  
Effective Lifetime ◽  
Type Silicon ◽  
Defect Sites ◽  
P Type

ABSTRACTChange in the light-induced minority carrier effective lifetime τeff of crystalline silicon caused by rapid laser heating is reported. The top surface of n- and p-type silicon substrates with thicknesses of 520 μm coated with thermally grown SiO2 layers were heated by a 940 nm semiconductor laser for 4 ms. τeff was measured by a method of microwave absorption caused by carriers induced by 620 nm light illumination at 1.5 mW/cm2. τeff for light illumination of the top surfaces was decreased to 1.0x10-5 and 4.8x10-6 s by laser heating at 5.0x104 W/cm2 for n- and ptype 520-μm-thick silicon substrates, respectively. The decrease in τeff resulted from the generation of defect states associated with the carrier recombination velocity at the top surface region, Stop. Laser heating increased Stop to 6000 and 10000 cm/s for n- and p-type silicon samples, respectively. Heat treatment at 400oC for 4h markedly decreased Stop to 21 and 120 cm/s, respectively, for n- and p-type silicon samples heated at 5.0x104 W/cm2. Laser heating at 4.0x104 W/cm2 for 4 ms was also applied to samples treated with Ar plasma irradiation at 50 W for 60 s, which decreased τeff (top) to 2.0x10-5 s and 3.9x10-6 s for n- and p-type silicon samples, respectively. Laser heating successfully increased τeff (top) to 2.8x10-3 and 4.1x10-4 s for n- and p-type samples, respectively. Laser irradiation at 4x104 W/cm2played a role of curing recombination defect sites.

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