Application of Magnetic Ferrite Electrodeposition and Copper Chemical Mechanical Planarization for On-Chip Analog Circuitry

2005 ◽  
Vol 869 ◽  
Author(s):  
Cody Washburn ◽  
Daniel Brown ◽  
Jay Cabacungan ◽  
Jayanti Venkataraman ◽  
Santosh K. Kurinec
Keyword(s):  
Analog Circuit ◽  
Substrate Surface ◽  
Chemical Mechanical Planarization ◽  
Deposition Process ◽  
Magnesium Nitrate ◽  
Silicon Substrates ◽  
Ferrite Material ◽  
Zn Ferrite ◽  
On Chip ◽  
P Type

AbstractInductors are important components of analog circuit designs, from matching circuitry to passive filters. In this study, the application of electrophoretically deposited nano-ferrite material has been investigated as a technique to increase the inductance of integrated copper planar inductors fabricated using copper plating and chemical mechanical planarization. Sintered Mn-Zn ferrite particles are suspended in a medium of isopropyl alcohol with magnesium nitrate and lanthanum nitrate salts. The transportation of the particles to the substrate surface is assisted by applied electric field and particles adhere to the substrate surface by a glycerol based surfactant. Electrophorectic deposition process forms a self aligned polymeric thin film on the surface of a p-type silicon substrate selectively with respect to copper. This ferrite deposition method yields high selectivity to the inductor coils and patterned silicon substrates compatible with standard silicon technology.

Excimer laser deposition of c-axis oriented Pb(Zr, Ti)O3 thin films on silicon substrates with direct-current glow discharge

1997 ◽  
Vol 12 (5) ◽  
pp. 1179-1182 ◽  
Author(s):  
Lirong Zheng ◽  
Xuhong Hu ◽  
Pingxiong Yang ◽  
W-ping Xu ◽  
Chenglu Lin
Keyword(s):  
Thin Films ◽  
Glow Discharge ◽  
Direct Current ◽  
Substrate Surface ◽  
Hysteresis Loops ◽  
Deposition Process ◽  
Discharge Voltage ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
Ferroelectric Hysteresis

Ferroelectric thin films of Pb(Zr, Ti)O3 (PZT) were fabricated on platinum-coated silicon using the process of direct-current glow discharge assisted laser deposition, where the substrate was electrically grounded. The films deposited at 730 °C with +800 V discharge voltage are oriented mostly with the c-axis perpendicular to the substrate surface, and exhibit good ferroelectric hysteresis loops. A possible mechanism for the improvement of the deposition process has been proposed.

Thin Film Polycrystalline Si by Cs Solution Growth Technique

1994 ◽  
Vol 358 ◽  
Author(s):  
Richard L. Wallace ◽  
Wayne A. Anderson ◽  
K. M. Jones
Keyword(s):  
Substrate Surface ◽  
Hole Mobility ◽  
Minority Carrier Lifetime ◽  
Deposition Process ◽  
Xrd Analysis ◽  
Growth Technique ◽  
Polysilicon Films ◽  
Solution Layer ◽  
P Type ◽  
Deposited Films

ABSTRACTA deposition process has been developed which allows the growth of large grain (20+ μm) polysilicon films on SiO2 substrates at a growth temperature of 650° C. A thin layer of liquid Si-metal solution is formed on the substrate surface as the growth medium. This layer is kept saturated by Si flux from a DC magnetron sputter gun. XRD analysis of the deposited films show a strong (111) preferred orientation, with increasing integrated peak intensities with increasing depositon temperature and solution layer thickness. Films deposited using an In-Si solution are p-type, with carrier concentrations in the mid 1016 cm−3 range. Conductivities of ∼.2 (Ω cm)−1 were measured, with activation energies for both carrier generation and conductivity of about 135meV. The hole mobility was found to be ∼ 30 cm2 V−1s−1. A wetting layer is used which may have a detrimental effect on the minority carrier lifetime.

Electrodeposition of Fe–Co Alloys into Nanoporous p-type Silicon: Influence of the Electrolyte Composition

2002 ◽  
Vol 17 (5) ◽  
pp. 1074-1084 ◽  
Author(s):  
F. Hamadache ◽  
J-L. Duvail ◽  
V. Scheuren ◽  
L. Piraux ◽  
C. Poleunis ◽  
...  
Keyword(s):  
Pure Iron ◽  
Carrier Transport ◽  
Deposition Process ◽  
Electrolyte Composition ◽  
Silicon Substrates ◽  
Type Silicon ◽  
Pure Cobalt ◽  
Iron Cobalt Alloys ◽  
P Type ◽  
Co Alloys

The cathodic deposition of iron–cobalt alloys inside the pores of anodically formed nanoporous silicon (PS) from p-type Si substrate is investigated with respect to the electrolyte composition. The samples were characterized by scanning electron microscopy, energy dispersive spectrometry, Auger electron spectroscopy, and Fourier transform infrared spectroscopy. Results showed that the nucleation of pure cobalt started at the bottom of the pores and the nucleation of pure iron occurred all over the pore walls, leading to a preferential deposition on top surface of the porous layer. Nevertheless, a low concentration of Co2+ ions (5 at.%) in the electrolyte drastically improved the penetration of iron into the pores. As a result, a good filling of the pores with Co metal as well as with Fe–Co alloys was achieved. It was also shown that the deposition process oxidizes the structure mainly at the pore walls. The results of our investigation indicate that the mechanisms occurring during the electrodeposition of metals on porous p-type silicon substrates are completely different depending on the kind of electrolyte used: pure iron-based electrolyte or cobalt-based solutions. A complete understanding of the deposition process requires further analyses of the carrier transport in PS and of the charge exchange at the Si/electrolyte and PS/electrolyte interfaces. These new results involving the deposition of iron-group materials into porous p-type silicon are useful for future silicon technologies.

Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

1987 ◽  
Vol 45 ◽  
pp. 340-341
Author(s):  
H. L. Tsai ◽  
J. W. Lee
Keyword(s):  
Growth Process ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Lattice Misfit ◽  
Device Fabrication ◽  
Silicon Substrates ◽  
Defect Structures ◽  
Gaas Film ◽  
Substrate Quality ◽  
Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

2003 ◽  
Vol 766 ◽  
Author(s):  
V. Ligatchev ◽  
T.K.S. Wong ◽  
T.K. Goh ◽  
Rusli Suzhu Yu
Keyword(s):  
Deep Level ◽  
Dielectric Films ◽  
Silicon Substrates ◽  
Reverse Bias Voltage ◽  
Defect States ◽  
Single Side ◽  
Sandwich Type ◽  
Transient Spectroscopy ◽  
P Type ◽  
Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

Diffusion model for deposition of epitaxial GaAs layers prepared by the MOCVD method

1991 ◽  
Vol 56 (10) ◽  
pp. 2020-2029
Author(s):  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma ◽  
Rudolf Hladina
Keyword(s):  
Experimental Data ◽  
Growth Rate ◽  
Kinetic Model ◽  
Gas Phase ◽  
Substrate Surface ◽  
Deposition Process ◽  
Hydrogen Atmosphere ◽  
Epitaxial Gaas ◽  
Kinetics Of ◽  
Good Agreement

The authors proposed and treated quantitatively a kinetic model for deposition of epitaxial GaAs layers prepared by reaction of trimethylgallium with arsine in hydrogen atmosphere. The transport of gallium to the surface of the substrate is considered as the controlling process. The influence of the rate of chemical reactions in the gas phase and on the substrate surface on the kinetics of the deposition process is neglected. The calculated dependence of the growth rate of the layers on the conditions of the deposition is in a good agreement with experimental data in the temperature range from 600 to 800°C.

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Microwave Absorbing Ferrite Thin Films for Microwave Heating of Microstructured Reactors

2009 ◽  
Vol 1222 ◽  
Author(s):  
Pengzhao Gao ◽  
Evgeny V. Rebrov ◽  
Jaap C. Schouten ◽  
Richard Kleismit ◽  
John Cetnar ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Microwave Heating ◽  
Near Field ◽  
Coplanar Waveguide ◽  
Sol Gel ◽  
Microwave Cavity ◽  
Silicon Substrates ◽  
Microwave Microscopy ◽  
Zn Ferrite

AbstractNanocrystalline Ni0.5Zn0.5Fe2O4 thin films have been synthesized with various grain sizes by sol–gel method on polycrystalline silicon substrates. The morphology and microwave absorption properties of the films calcined in the 673–1073 K range were studied by using XRD, AFM, near–field evanescent microwave microscopy, coplanar waveguide and direct microwave heating measurements. All films were uniform without microcracks. The increase of the calcination temperature from 873 to 1073 K and time from 1 to 3h resulted in an increase of the grain size from 12 to 27 nm. The complex permittivity of the Ni-Zn ferrite films was measured in the frequency range of 2–15 GHz. The heating behavior was studied in a multimode microwave cavity at 2.4 GHz. The highest microwave heating rate in the temperature range of 315–355 K was observed in the film close to the critical grain size of 21 nm in diameter marked by the transition from single– to multi–domain structure of nanocrystals in Ni0.5Zn0.5Fe2O4 film and by a maximum in its coercivity.

High Volume Production Growth of GaAs on Silicon Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Chris R. Ito ◽  
M. Feng ◽  
V. K. Eu ◽  
H. B. Kim
Keyword(s):  
Schottky Diodes ◽  
High Volume ◽  
Wafer Surface ◽  
Silicon Substrates ◽  
Growth Technique ◽  
Wafer Thickness ◽  
Production Growth ◽  
High Volume Production ◽  
Volume Production ◽  
P Type

ABSTRACTA high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.

Growth of Rutile TiO2 Nanorods by Chemical Bath Deposition Method on Silicon Substrate at Different Annealing Temperature

2014 ◽  
Vol 624 ◽  
pp. 129-133 ◽  
Author(s):  
Abbas M. Selman ◽  
Zainuriah Hassan
Keyword(s):  
Optical Properties ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Annealing Treatment ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
Uv Emission ◽  
Cbd Method ◽  
P Type

Effects of annealing treatment on growth of rutile TiO2nanorods on structural, morphological and optical properties of TiO2nanorods were investigated. The nanorods were fabricated on p-type (111)-oriented silicon substrates and, all substrates were seeded with a TiO2seed layer synthesized by radio-frequency reactive magnetron sputtering system. Chemical bath deposition (CBD) was carried out to grow rutile TiO2nanorods on Si substrate at different annealing temperatures (350, 550, 750, and 950 °C). Raman spectroscopy, X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analyses showed the tetragonal rutile structure of the synthesized TiO2nanorods. Optical properties were examined by photoluminescence spectroscopy. The spectra exhibit one strong UV emission peak which can be seen at around 390 nm for all of the samples. In the visible region, TiO2demonstrated two dominant PL emissions centered at around 519 and 705 nm. The experimental results showed that the TiO2nanorods annealed at 550 °C exhibited the optimal structural properties. Moreover, the CBD method enabled the formation of photosensitive, high-quality rutile TiO2nanorods with few defects for future optoelectronic nanodevice applications.

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