Quantitative Analysis of Alloys and Thin Films Using Ion Scattering Spectroscopy

2009 ◽  
pp. 150-150-14 ◽  
Author(s):  
WL Baun
Keyword(s):  
Thin Films ◽  
Quantitative Analysis ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

Hydrogen Adsorption Effects on Thin Film Growth Mode Studied by Ion Scattering

1991 ◽  
Vol 237 ◽  
Author(s):  
F. ShojiK ◽  
K. Sumitomo ◽  
T. Kinoshita ◽  
Y. Tanaka ◽  
K. Oura ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Hydrogen Adsorption ◽  
Film Growth ◽  
Low Energy ◽  
Ion Scattering ◽  
Detection Analysis ◽  
Low Energy Ion Scattering ◽  
Flight Mode ◽  
Ion Scattering Spectroscopy

ABSTRACTThe effects of hydrogen adsorption on the growth process and structures of Ag thin films on Si(111)-7×7 surfaces has been studied. The growth process and film structures are investigated by low energy electron diffraction(LEED) and low energy ion scattering spectroscopy of time of flight mode(TOF-ICISS). The hydrogen adsorbed on the surface is investigated by low energy recoil detection analysis(TOF-ERDA). We have found that Ag thin films deposited onto hydrogen covered Si(111) surfaces grow with a mode definitely different from that on clean surfaces.

In situ determination of the terminating layer of La0.7Sr0.3MnO3 thin films using coaxial impact-collision ion scattering spectroscopy

1998 ◽  
Vol 73 (2) ◽  
pp. 187-189 ◽  
Author(s):  
M. Yoshimoto ◽  
H. Maruta ◽  
T. Ohnishi ◽  
K. Sasaki ◽  
H. Koinuma
Keyword(s):  
Thin Films ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

Surface structure and metal epitaxy: Ag/Cu(111)

2000 ◽  
Vol 648 ◽  
Author(s):  
Kenji Umezawa ◽  
Shigemitsu Nakanishi ◽  
Walter M. Gibson
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Solid Surfaces ◽  
Growth Mode ◽  
Ion Scattering ◽  
General Phenomenon ◽  
Growth Modes ◽  
Ion Scattering Spectroscopy ◽  
Different Types ◽  
Substrate Temperatures

AbstractWe have investigated the growth of 3 ML (mono-layer) of Ag on Cu(111) for substrate temperatures from 170 through 640 K by using time of flight-impact collision ion scattering spectroscopy (TOF -ICISS). Two different types of epitaxial growth exist: Ag [112]//Cu[112](type-n) and Ag [112]//Cu[112] (type-r).The growth modes of the Ag thin films on Cu(111) surfaces depend strongly on the temperature during deposition with the Ag(111) planes having a preferred orientation of either type-n growth mode or type-r growth mode as a function of theCu substrate temperature. The experimental results concerning Ag/Cu(111) show many similarities to those in the previous study of Au/Ni(111). This would suggest that an observed oscillation in the growth mode, dependent on the substrate temperature during deposition may a general phenomenon on solid surfaces, in cases of large misfit since it has now been seen for both Au/Ni(111) and Ag/Cu(111) systems.

Atomic-scale Analysis of Laser MBE Growth of Oxide Thin Films by in situ Rheed and Caiciss

1997 ◽  
Vol 502 ◽  
Author(s):  
M. Yoshimoto ◽  
T. Ohnishi ◽  
G-H. Lee ◽  
K. Sasaki ◽  
H. Maruta ◽  
...  
Keyword(s):  
Thin Films ◽  
High Energy ◽  
Atomic Scale ◽  
Oxide Thin Film ◽  
Ex Situ ◽  
Ion Scattering ◽  
Oxide Thin Films ◽  
Ion Scattering Spectroscopy ◽  
Laser Mbe

ABSTRACTAtomic-scale growth analysis of oxide thin films was performed by in situ reflection high energy electron diffraction (RHEED) and coaxial impact collision ion scattering spectroscopy (CAICISS) combined with Laser MBE. On single crystal substrates with atomically flat terrace and step structures, the two-dimensional nucleation followed by molecular layer-by-layer growth was verified by in situ monitoring of RHEED intensity oscillations, as well as ex situ atomic force microscopy (AFM) observation, for the growth of BaTiO3, Al2O3 and BaO thin films. The epitaxial BaTiO3 films grown on SrTiO3(100) and c-axis oriented Bi2Sr2CaCu2Ox (Bi2212) superconducting films were subjected to in situ CAICISS measurements in order to examine the topmost surface structure. The key factors to develop oxide lattice engineering are discussed with respect to not only in situ monitoring of the growth process using RHEED but also the atomic regulation of the substrate surface by AFM and ion scattering spectroscopy. The present work also demonstrates the advanced oxide thin film processing based on the laser MBE to control the growth and surface of films on an atomic scale.

Coaxial impact-collision ion scattering spectroscopy analysis of ZnO thin films and single crystals

1998 ◽  
Vol 56 (2-3) ◽  
pp. 256-262 ◽  
Author(s):  
T. Ohnishi ◽  
A. Ohtomo ◽  
I. Ohkuboa ◽  
M. Kawasaki ◽  
M. Yoshimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystals ◽  
Zno Thin Films ◽  
Ion Scattering ◽  
Spectroscopy Analysis ◽  
Ion Scattering Spectroscopy
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