In situ determination of the terminating layer of La0.7Sr0.3MnO3 thin films using coaxial impact-collision ion scattering spectroscopy

1998 ◽  
Vol 73 (2) ◽  
pp. 187-189 ◽  
Author(s):  
M. Yoshimoto ◽  
H. Maruta ◽  
T. Ohnishi ◽  
K. Sasaki ◽  
H. Koinuma
Keyword(s):  
Thin Films ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

In Situ Determination of Terminating Atomic Plane of SrTiO3(001) by Coaxial Impact Collision Ion Scattering Spectroscopy

1995 ◽  
pp. 913-916
Author(s):  
Osamu Ishiyama ◽  
Makoto Shinohara ◽  
Fumihiko Ohtani ◽  
Mamoru Yoshimoto ◽  
Tatsuro Maeda ◽  
...  
Keyword(s):  
Atomic Plane ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy

Atomic-scale Analysis of Laser MBE Growth of Oxide Thin Films by in situ Rheed and Caiciss

1997 ◽  
Vol 502 ◽  
Author(s):  
M. Yoshimoto ◽  
T. Ohnishi ◽  
G-H. Lee ◽  
K. Sasaki ◽  
H. Maruta ◽  
...  
Keyword(s):  
Thin Films ◽  
High Energy ◽  
Atomic Scale ◽  
Oxide Thin Film ◽  
Ex Situ ◽  
Ion Scattering ◽  
Oxide Thin Films ◽  
Ion Scattering Spectroscopy ◽  
Laser Mbe

ABSTRACTAtomic-scale growth analysis of oxide thin films was performed by in situ reflection high energy electron diffraction (RHEED) and coaxial impact collision ion scattering spectroscopy (CAICISS) combined with Laser MBE. On single crystal substrates with atomically flat terrace and step structures, the two-dimensional nucleation followed by molecular layer-by-layer growth was verified by in situ monitoring of RHEED intensity oscillations, as well as ex situ atomic force microscopy (AFM) observation, for the growth of BaTiO3, Al2O3 and BaO thin films. The epitaxial BaTiO3 films grown on SrTiO3(100) and c-axis oriented Bi2Sr2CaCu2Ox (Bi2212) superconducting films were subjected to in situ CAICISS measurements in order to examine the topmost surface structure. The key factors to develop oxide lattice engineering are discussed with respect to not only in situ monitoring of the growth process using RHEED but also the atomic regulation of the substrate surface by AFM and ion scattering spectroscopy. The present work also demonstrates the advanced oxide thin film processing based on the laser MBE to control the growth and surface of films on an atomic scale.

Chemical Analyses of Sol/Gel Surfaces and Thin Films

1984 ◽  
Vol 32 ◽  
Author(s):  
Carlo G. Pantano ◽  
C. A. Houser ◽  
R. K. Brow
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Silica Films ◽  
Alumina Films ◽  
Surface Analysis Techniques ◽  
Relative Water ◽  
Temperature Programmed

ABSTRACTThe application of surface analysis techniques to the characterization of sol/gel surfaces and thin films is described. Secondary-ion mass spectroscopy (SIMS), x-ray photoelectron spectroscopy (XPS) and sputter-induced photon spectroscopy (SIPS) are used to measure the composition of multicomponent silicate films, the relative water content of alumina films, the nitrogen content of ammonia treated silica films, and the depth profiles for films on black chrome. The determination of chemical structure using XPS and SIMS is also discussed. Finally, a brief introduction to temperature-programmed desorption (TPD) and its potential for studying surface chemical reactions, in situ, is presented.

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