Hydrogen Adsorption Effects on Thin Film Growth Mode Studied by Ion Scattering

1991 ◽  
Vol 237 ◽  
Author(s):  
F. ShojiK ◽  
K. Sumitomo ◽  
T. Kinoshita ◽  
Y. Tanaka ◽  
K. Oura ◽  
...  

ABSTRACTThe effects of hydrogen adsorption on the growth process and structures of Ag thin films on Si(111)-7×7 surfaces has been studied. The growth process and film structures are investigated by low energy electron diffraction(LEED) and low energy ion scattering spectroscopy of time of flight mode(TOF-ICISS). The hydrogen adsorbed on the surface is investigated by low energy recoil detection analysis(TOF-ERDA). We have found that Ag thin films deposited onto hydrogen covered Si(111) surfaces grow with a mode definitely different from that on clean surfaces.

2019 ◽  
Vol 126 (15) ◽  
pp. 155301 ◽  
Author(s):  
C. R. Stilhano Vilas Boas ◽  
J. M. Sturm ◽  
F. Bijkerk

2000 ◽  
Vol 445 (1) ◽  
pp. L36-L40 ◽  
Author(s):  
M. Casagrande ◽  
S. Lacombe ◽  
L. Guillemot ◽  
V.A. Esaulov

2003 ◽  
Vol 17 (29n30) ◽  
pp. 1527-1536
Author(s):  
D. S. CHOI ◽  
D. H. KIM ◽  
S. S. KIM

The surface structure of Ag/W(100) has been studied using LEED and Low Energy Ion Scattering Spectroscopy (ISS). We find that Ag coverages are saturated at 0.5 ML after annealing at 800°C regardless of the initial coverages between 0.7~1.0 ML. We observe a c(2×2) image after annealing the Ag/W(100) sample at 800°C. Using the ISS technique the adsorption site of Ag on the c(2×2) surface is found to be the center of the nearest two atoms on the W(100) surface. The height of the Ag adsorption layer is 1.58 Å above the W(100) surface.


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