scholarly journals Optimization of Dopant Diffusion and Ion Implantation to Increase Integration Rate of Field-Effect Heterotransistors. An Ap-Proach to Simplify Construction of the Heterotransistors

2015 ◽  
Vol 4 (1) ◽  
pp. 43-54
Author(s):  
E.L Pankratov ◽  
E.A Bulaeva
Keyword(s):  
Ion Implantation ◽  
Field Effect ◽  
Dopant Diffusion

ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF A INJECTION LOCKED OSCILLATOR

2020 ◽  
Vol 4 (2) ◽  
pp. 43-50
Author(s):  
E.L. Pankratov
Keyword(s):  
Ion Implantation ◽  
Mass Transport ◽  
Epitaxial Layer ◽  
Field Effect ◽  
Analytical Approach ◽  
Radiation Defects ◽  
Dopant Diffusion ◽  
Time And Space ◽  
Varying Parameters ◽  
Specific Configuration

We analyzed possibility to increase density of field-effect heterotransistors framework an injection locked oscillator. We obtain, that to increase the density of the considered transistors one shall manufacture them in a heterostructure with specific configuration (substrate and epitaxial layer with sections, which were manufactured by using other materials). These sections should be doped by using ion implantation or dopant diffusion. After the doping optimized annealing of dopant and/or radiation defects should done. To formulate recommendations for the optimization we model mass transport (with account nonlinearity) with time and space varying parameters. To make the modelling we introduce an analytical approach. The approach gives a possibility to make the above modelling without crosslinking of solution on interfaces of the heterostructure.

scholarly journals Atomic scale models of Ion implantation and dopant diffusion in silicon

10.2172/12209 ◽  
1999 ◽  
Author(s):  
M Caturla ◽  
M Johnson ◽  
T Lenosky ◽  
B Sadigh ◽  
S K Theiss ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Atomic Scale ◽  
Dopant Diffusion ◽  
Scale Models

Eliminating dopant diffusion after ion implantation by surface etching

1994 ◽  
Vol 64 (24) ◽  
pp. 3302-3304 ◽  
Author(s):  
Cynthia C. Lee ◽  
Michael D. Deal ◽  
John C. Bravman
Keyword(s):  
Ion Implantation ◽  
Dopant Diffusion ◽  
Surface Etching

On Approach to Increase Integration Rate of Double-Gate Heterotransistors

2017 ◽  
Vol 16 (04) ◽  
pp. 1650039
Author(s):  
E. L. Pankratov ◽  
E. A. Bulaeva
Keyword(s):  
Ion Implantation ◽  
Heat Transport ◽  
Field Effect ◽  
Double Gate ◽  
Radiation Defects ◽  
Variation Of Parameters ◽  
Framework Approach ◽  
Account Variation

In this paper, we introduce an approach to manufacture a field-effect heterotransistor with two gates. In the framework approach, we consider a heterostructure with required configuration, doping of required parts of the heterostructure by diffusion and/or ion implantation and optimization of annealing of dopant or radiation defects. The introduced approach of manufacturing a transistor gives us the possibility to decrease area of surface and thickness of the transistor. In this paper, we also introduce an approach to make prognosis of mass and heat transport with account variation of parameters of these processes in space in time and nonlinearity of these processes.

Poly-Silicon Deposition by Evaporation for TFTs

1987 ◽  
Vol 106 ◽  
Author(s):  
W. Schmolla ◽  
J. Diefenbach ◽  
G. Blang ◽  
W. Senske
Keyword(s):  
Ion Implantation ◽  
Borosilicate Glass ◽  
Hall Mobility ◽  
Field Effect ◽  
Current Ratio ◽  
Glass Substrates ◽  
Threshold Voltages ◽  
Electron Field ◽  
Evaporation Technique ◽  
Si Films

ABSTRACTPoly-Si films were e-gun evaporated onto glass substrates. The Hall-mobility for holes was found to be about 2 cm2/Vs in undoped poly-Si films deposited at 400°C and 9 cm2/Vs at 500°C. TFTs were fabricated on the base of poly-Si evaporation technique on borosilicate glass at a highest process temperature of 550°C without ion implantation. The electrical TFT characteristics yield electron field-effect mobilities higher than 10 cm2/Vs as well as threshold voltages less than IV and an on/off current ratio in excess of 104.

Threshold voltage adjustment of ferroelectric-gate field effect transistors by ion implantation

2009 ◽  
Vol 24 (2) ◽  
pp. 025012 ◽  
Author(s):  
Qiu-Hong Li ◽  
Takeshi Horiuchi ◽  
Shouyu Wang ◽  
Mitsue Takahashi ◽  
Shigeki Sakai
Keyword(s):  
Ion Implantation ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors
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