Improvedncontact and series resistance in InP/InGaAs heterostructures by Si ion implantation demonstrated on junction field‐effect transistors

1992 ◽  
Vol 72 (10) ◽  
pp. 4998-5000 ◽  
Author(s):  
D. Römer ◽  
J. G. Bauer ◽  
Ch. Lauterbach ◽  
J. Müller ◽  
J. W. Walter
Keyword(s):  
Ion Implantation ◽  
Field Effect ◽  
Series Resistance ◽  
Field Effect Transistors ◽  
Si Ion Implantation ◽  
Junction Field Effect Transistors

scholarly journals AlN metal–semiconductor field-effect transistors using Si-ion implantation

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FR11 ◽  
Author(s):  
Hironori Okumura ◽  
Sami Suihkonen ◽  
Jori Lemettinen ◽  
Akira Uedono ◽  
Yuhao Zhang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Si Ion Implantation

scholarly journals AlN metal-semiconductor field-effect transistors using Si-ion implantation

2017 ◽  
Author(s):  
H. Okumura ◽  
S. Suihkonen ◽  
J. Lemettinen ◽  
A. Uedono ◽  
T. Palacios
Keyword(s):  
Ion Implantation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Si Ion Implantation

GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

2020 ◽  
Vol 67 (10) ◽  
pp. 3972-3977 ◽  
Author(s):  
Chen Yang ◽  
Houqiang Fu ◽  
Viswanathan Naveen Kumar ◽  
Kai Fu ◽  
Hanxiao Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Vertical Channel ◽  
Junction Field Effect Transistors

Low Noise Junction Field Effect Transistors in a Silicon Radiation Detector Technology

2006 ◽  
Vol 53 (5) ◽  
pp. 3004-3012 ◽  
Author(s):  
G.-F. Dalla Betta ◽  
M. Boscardin ◽  
F. Fenotti ◽  
L. Pancheri ◽  
C. Piemonte ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Radiation Detector ◽  
Low Noise ◽  
Detector Technology ◽  
Junction Field Effect Transistors
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