Poly-Silicon Deposition by Evaporation for TFTs

1987 ◽  
Vol 106 ◽  
Author(s):  
W. Schmolla ◽  
J. Diefenbach ◽  
G. Blang ◽  
W. Senske
Keyword(s):  
Ion Implantation ◽  
Borosilicate Glass ◽  
Hall Mobility ◽  
Field Effect ◽  
Current Ratio ◽  
Glass Substrates ◽  
Threshold Voltages ◽  
Electron Field ◽  
Evaporation Technique ◽  
Si Films

ABSTRACTPoly-Si films were e-gun evaporated onto glass substrates. The Hall-mobility for holes was found to be about 2 cm2/Vs in undoped poly-Si films deposited at 400°C and 9 cm2/Vs at 500°C. TFTs were fabricated on the base of poly-Si evaporation technique on borosilicate glass at a highest process temperature of 550°C without ion implantation. The electrical TFT characteristics yield electron field-effect mobilities higher than 10 cm2/Vs as well as threshold voltages less than IV and an on/off current ratio in excess of 104.

Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4310-4314
Author(s):  
Juhee Jeon ◽  
Young-Soo Park ◽  
Sola Woo ◽  
Doohyeok Lim ◽  
Jaemin Son ◽  
...  
Keyword(s):  
Design Optimization ◽  
Mole Fraction ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Barrier ◽  
Current Ratio ◽  
Threshold Voltages ◽  
Band To Band Tunneling ◽  
Tunneling Field Effect Transistors ◽  
Commercial Device

In this paper, we propose the design optimization of underlapped Si1–xGex-source tunneling field-effect transistors (TFETs) with a gate-all-around structure. The band-to-band tunneling rates, tunneling barrier widths, I–V transfer characteristics, threshold voltages, on/off current ratios, and subthreshold swings (SSs) were analyzed by varying the Ge mole fraction of the Si1–xGex source using a commercial device simulator. In particular, a Si0.2Ge0.8-source TFET among our proposed TFETs exhibits an on/off current ratio of approximately 1013, and SS of 27.4 mV/dec.

Nanocrystalline Silicon TFTs With 50 nm Thick Deposited Channel Layer, 10 cm2/Vs Electron Mobility and 108 On/Off Current Ratio

2001 ◽  
Vol 664 ◽  
Author(s):  
Robert B. Min ◽  
Sigurd Wagner
Keyword(s):  
Field Effect ◽  
High Mobility ◽  
Nanocrystalline Silicon ◽  
Channel Length ◽  
High Electron ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Gate Structure ◽  
Electron Field ◽  
Top Gate Structure

ABSTRACTThin film transistors were made using 50 nm thick directly deposited nanocrystalline silicon channel layers. The transistors have coplanar top gate structure. The nanocrystalline silicon was deposited from discharges in silane, hydrogen and silicon tetrafluoride. The transistors combine a high electron field effect mobility of ∼ 10 cm2/Vs with a low “off” current of ∼ 10−14 A per µm of channel length, and an “on”/“off” current ratio of ∼ 108. This result shows that directly deposited silicon can combine high mobility with low “off” currents.

Effects of the Substrate Pretreatments on the Leakage Current in the Low-Temperature Poly-Si TFTs

1996 ◽  
Vol 448 ◽  
Author(s):  
Tae-Kyung Kim ◽  
Byung-Il Lee ◽  
Tae-Hyung Ihn ◽  
Seung-Ki Joo
Keyword(s):  
Leakage Current ◽  
Glass Substrate ◽  
Field Effect ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Glass Substrates ◽  
Layer Deposition ◽  
Order Of Magnitude ◽  
Lateral Crystallization

AbstractPoly-Si TFT’s were fabricated on the glass substrate by the Metal Induced Lateral Crystallization(MILC). Before deposition of the active a-Si thin films(1000 Å), the glass substrate was pretreated in three different ways such as oxidation of a-Si(100 Å), oxide buffer layer deposition(1000 Å), and ion mass doping of the glass substrates. The leakage current at reverse bias could be reduced by one order of magnitude by the substrate pretreatment. Field effect mobility of n-channel TFT’s was 108cm2/Vsec, subthreshold slope and on/off current ratio were 0.7 V/dec. and about 106, respectively.

The Properties of Low Hydrogen Silicon Thin Films Deposited by Mesh-type PECVD

2001 ◽  
Vol 664 ◽  
Author(s):  
Se-Won Ryu ◽  
Do-Hyun Kwon ◽  
Sung-Gye Park ◽  
Hyoung-June Kim
Keyword(s):  
Deposition Rate ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Field Effect Mobility ◽  
Laser Melting ◽  
Current Ratio ◽  
Silicon Thin Films ◽  
Dc Bias ◽  
Si Films ◽  
Si Thin Film

ABSTRACTWe propose a mesh-type PECVD to minimize the hydrogen concentration in this study. Since in this system deposition rate is very slow, so for increasing a deposition rate, we suggest an applied DC bias enhanced sputtering process. We investigated several conditions to compare with conventional PECVD. Excimer-laser melting and regrowth of thin a-Si films is for fabricating polycrystalline-Si (poly-Si). Furthermore, we fabricate poly-Si thin-film transistor(TFTs) and measure threshold voltage (V), field-effect mobility (cm2 /Vs) and on/off current ratio

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Rapid Epitaxial Growth of Si and SiGe Mono-Crystalline Films on Silicon-on-Glass Substrates by Reactive CVD Using SiH4, GeH4, and F2

2012 ◽  
Vol 1426 ◽  
pp. 331-337
Author(s):  
Hiroshi Noge ◽  
Akira Okada ◽  
Ta-Ko Chuang ◽  
J. Greg Couillard ◽  
Michio Kondo
Keyword(s):  
Epitaxial Growth ◽  
Heating Temperature ◽  
Exothermic Reaction ◽  
Epitaxial Films ◽  
Si Substrates ◽  
Glass Substrates ◽  
Good Crystallinity ◽  
Crystalline Films ◽  
Si Films ◽  
First Time

ABSTRACTWe have succeeded in the rapid epitaxial growth of Si, Ge, and SiGe films on Si substrates below 670 ºC by reactive CVD utilizing the spontaneous exothermic reaction between SiH4, GeH4, and F2. Mono-crystalline SiGe epitaxial films with Ge composition ranging from 0.1 to 1.0 have been successfully grown by reactive CVD for the first time.This technique has also been successfully applied to the growth of these films on silicon-on-glass substrates by a 20 - 50 ºC increase of the heating temperature. Over 10 μm thick epitaxial films at 3 nm/s growth rate are obtained. The etch pit density of the 5.2 μm-thick Si0.5Ge0.5 film is as low as 5 x 106 cm-2 on top. Mobilities of the undoped SiGe and Si films are 180 to 550 cm2/Vs, confirming the good crystallinity of the epitaxial films.

Thiophene-based twisted bistricyclic aromatic ene with tricoordinate boron: a new n-type semiconductor

2021 ◽  
Vol 57 (11) ◽  
pp. 1316-1319
Author(s):  
Yohei Adachi ◽  
Takanori Nomura ◽  
Shion Tazuhara ◽  
Hiroyoshi Naito ◽  
Joji Ohshita
Keyword(s):  
Energy Absorption ◽  
Field Effect ◽  
Low Energy ◽  
Type Semiconductor ◽  
Electron Field

A new boron-embedded bistricyclic aromatic ene (BAE) exhibits a low-energy absorption and obvious n-type semiconducting character with moderate electron field-effect mobilities in OFETs.

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

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