Eliminating dopant diffusion after ion implantation by surface etching

1994 ◽  
Vol 64 (24) ◽  
pp. 3302-3304 ◽  
Author(s):  
Cynthia C. Lee ◽  
Michael D. Deal ◽  
John C. Bravman
Keyword(s):  
Ion Implantation ◽  
Dopant Diffusion ◽  
Surface Etching

scholarly journals Atomic scale models of Ion implantation and dopant diffusion in silicon

10.2172/12209 ◽  
1999 ◽  
Author(s):  
M Caturla ◽  
M Johnson ◽  
T Lenosky ◽  
B Sadigh ◽  
S K Theiss ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Atomic Scale ◽  
Dopant Diffusion ◽  
Scale Models

The impact of ion-implantation damage on dopant diffusion

2005 ◽  
Author(s):  
Ruey-Dar Chang ◽  
Ray-Chen Deng ◽  
Show-In Hsu ◽  
Song-Tang Chiang
Keyword(s):  
Ion Implantation ◽  
Dopant Diffusion ◽  
Implantation Damage ◽  
The Impact

Selective Suppression of Carrier-Driven Photochemical Etching: Raman Spectroscopy as a Diagnostic Tool

1990 ◽  
Vol 201 ◽  
Author(s):  
C. I. H. Ashby ◽  
D. R. Myers ◽  
G. A. Vawter ◽  
R. M. Biefeld ◽  
J. F. Klem
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Electronic Properties ◽  
Specific Treatment ◽  
Photochemical Reactions ◽  
Near Surface ◽  
Zn Diffusion ◽  
Surface Etching ◽  
Photochemical Etching ◽  
Carrier Recombination

AbstractCarrier-driven photochemical etching of semiconductors can be selectively suppressed by altering the near-surface region to enhance carrier recombination, thereby reducing the supply of carriers that drive the surface etching reaction. Two methods for enhancing recombination and decreasing the etch rate at a given phonon flux include ion implantation and localized Zn diffusion. Raman spectroscopy can be employed to determine whether sufficient alteration of electronic properties has occurred to suppress etching.Carrier-driven photochemical reactions, which require direct participation of free carriers for the chemical reaction to proceed, can be selectively suppressed by increasing the minority carrier recombination rate, thereby reducing the supply of carriers that drive the surface etching reaction. Two methods for enhancing recombination and decreasing the etching quantum yield, which is the number of atoms removed per incident photon, include ion implantation and localized Zn diffusion. For ion implantation, recombination-promoting defect concentrations depend on ion species, fluence, and annealing both during and after the implantation process. Other recombination processes related to carrier scattering from ionized impurities from in-diffusion of dopants or following implant activation can control etching.Raman spectroscopy can be employed to detect changes in electronic properties that correlate with etching suppression. Changes that occur in the LO-phonon lineshape, such as those associated with phonon confinement and ionized impurity scattering, can be diagnostic of the carrier-driven etching behavior following a specific treatment. We have demonstrated two applications of Raman spectroscopy as a diagnostic for suppression of the carrier-driven photochemical etching of GaAs.

Simulation of Ion Implantation in SiC: Dopant Profiling and Activation

2009 ◽  
Vol 615-617 ◽  
pp. 449-452
Author(s):  
Stéphane Morata ◽  
Frank Torregrosa ◽  
Thierry Bouchet
Keyword(s):  
Experimental Data ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Sheet Resistance ◽  
Depth Profile ◽  
Dopant Diffusion ◽  
Dopant Profiling ◽  
Dopant Profile ◽  
Distribution Moments ◽  
Modeling Accuracy

This paper presents a new simple hand using and fast simulator for ion implantation in 4H-SiC substrates developed by IBS for ESCAPEE European project. The modeling is divided in two parts: Empirical Depth Profile Simulator (EDPS) and Activation/Electrical Properties Simulator (AEPS). EDPS is calibrated for aluminium (Al) and nitrogen (N) implantations into 4H-SiC from SIMS measurements. Implanted dopant profile is constructed using the Pearson IV distribution. Moments of this distribution are extracted from experimental data (SIMS). This modeling takes multiple implantation and dopant diffusion into consideration. After annealing, activation properties related to the junction are predicted using AEPS. This allows prediction of sheet resistance of the implanted layer. Modeling accuracy is demonstrated by comparisons with experimental data.

scholarly journals Atomic scale models of ion implantation and dopant diffusion in silicon

2000 ◽  
Vol 365 (2) ◽  
pp. 219-230 ◽  
Author(s):  
Silva K Theiss ◽  
M.J Caturla ◽  
M.D Johnson ◽  
J Zhu ◽  
T Lenosky ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Atomic Scale ◽  
Dopant Diffusion ◽  
Scale Models

ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF A INJECTION LOCKED OSCILLATOR

2020 ◽  
Vol 4 (2) ◽  
pp. 43-50
Author(s):  
E.L. Pankratov
Keyword(s):  
Ion Implantation ◽  
Mass Transport ◽  
Epitaxial Layer ◽  
Field Effect ◽  
Analytical Approach ◽  
Radiation Defects ◽  
Dopant Diffusion ◽  
Time And Space ◽  
Varying Parameters ◽  
Specific Configuration

We analyzed possibility to increase density of field-effect heterotransistors framework an injection locked oscillator. We obtain, that to increase the density of the considered transistors one shall manufacture them in a heterostructure with specific configuration (substrate and epitaxial layer with sections, which were manufactured by using other materials). These sections should be doped by using ion implantation or dopant diffusion. After the doping optimized annealing of dopant and/or radiation defects should done. To formulate recommendations for the optimization we model mass transport (with account nonlinearity) with time and space varying parameters. To make the modelling we introduce an analytical approach. The approach gives a possibility to make the above modelling without crosslinking of solution on interfaces of the heterostructure.

Sign in / Sign up

Export Citation Format

Share Document