scholarly journals Atomic scale models of Ion implantation and dopant diffusion in silicon

10.2172/12209 ◽  
1999 ◽  
Author(s):  
M Caturla ◽  
M Johnson ◽  
T Lenosky ◽  
B Sadigh ◽  
S K Theiss ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Atomic Scale ◽  
Dopant Diffusion ◽  
Scale Models

scholarly journals Atomic scale models of ion implantation and dopant diffusion in silicon

2000 ◽  
Vol 365 (2) ◽  
pp. 219-230 ◽  
Author(s):  
Silva K Theiss ◽  
M.J Caturla ◽  
M.D Johnson ◽  
J Zhu ◽  
T Lenosky ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Atomic Scale ◽  
Dopant Diffusion ◽  
Scale Models

Atomistic Aspects of Fracture Modelling in the Framework of Continuum Mechanics

1998 ◽  
Vol 538 ◽  
Author(s):  
F. Cleri
Keyword(s):  
Continuum Mechanics ◽  
Constitutive Relations ◽  
Point Of View ◽  
Atomic Scale ◽  
Continuum Models ◽  
Cohesive Law ◽  
Macroscopic Models ◽  
Scale Models ◽  
Level Information ◽  
Set Up

AbstractThe validity and predictive capability of continuum models of fracture rests on basic informations whose origin lies at the atomic scale. Examples of such crucial informations are, e.g., the explicit form of the cohesive law in the Barenblatt model and the shear-displacement relation in the Rice-Peierls-Nabarro model. Modem approaches to incorporate atomic-level information into fracture modelling require to increase the size of atomic-scale models up to millions of atoms and more; or to connect directly atomistic and macroscopic, e.g. finite-elements, models; or to pass information from atomistic to continuum models in the form of constitutive relations. A main drawback of the atomistic methods is the complexity of the simulation results, which can be rather difficult to rationalize in the framework of classical, continuum fracture mechanics. We critically discuss the main issues in the atomistic simulation of fracture problems (and dislocations, to some extent); our objective is to indicate how to set up atomistic simulations which represent well-posed problems also from the point of view of continuum mechanics, so as to ease the connection between atomistic information and macroscopic models of fracture.

Eliminating dopant diffusion after ion implantation by surface etching

1994 ◽  
Vol 64 (24) ◽  
pp. 3302-3304 ◽  
Author(s):  
Cynthia C. Lee ◽  
Michael D. Deal ◽  
John C. Bravman
Keyword(s):  
Ion Implantation ◽  
Dopant Diffusion ◽  
Surface Etching

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

2021 ◽  
Author(s):  
Yexin Fan ◽  
ying song ◽  
zongwei xu ◽  
jintong wu ◽  
rui zhu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Color Center ◽  
Md Simulation ◽  
Subsequent Annealing ◽  
Atomic Scale ◽  
New Method ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Helium Ion

Abstract Molecular dynamics (MD) simulation is adopted to discover the underlying mechanism of silicon vacancy color center and damage evolution during helium ions implanted four-hexagonal silicon carbide (4H-SiC) and subsequent annealing. The atomic-scale mechanism of silicon vacancy color centers in the process of He ion implantation into 4H-SiC can be described more accurately by incorporating electron stopping power for He ion implantation. We present a new method for calculating the silicon vacancy color center numerically, which considers the structure around the color center and makes the statistical results more accurate than the Wigner-Seitz defect analysis method. At the same time, photoluminescence (PL) spectroscopy of silicon vacancy color center under different helium ion doses is also characterized for validating the numerical analysis. The MD simulation of the optimal annealing temperature of silicon vacancy color center is predicted by the proposed new method.

scholarly journals Defects and dislocations in MgO: atomic scale models of impurity segregation and fast pipe diffusion

2010 ◽  
Vol 20 (46) ◽  
pp. 10445 ◽  
Author(s):  
Feiwu Zhang ◽  
Andrew M. Walker ◽  
Kate Wright ◽  
Julian D. Gale
Keyword(s):  
Atomic Scale ◽  
Pipe Diffusion ◽  
Impurity Segregation ◽  
Scale Models

scholarly journals Atomic-scale description of interfaces in rutile/sodium silicate glass–crystal composites

2018 ◽  
Vol 20 (26) ◽  
pp. 17624-17636 ◽  
Author(s):  
Paul C. M. Fossati ◽  
Michael J. D. Rushton ◽  
William E. Lee
Keyword(s):  
Crystal Structure ◽  
Sodium Silicate ◽  
Silicate Glass ◽  
Glass Phase ◽  
Structural Changes ◽  
Atomic Scale ◽  
Sodium Silicate Glass ◽  
Scale Models ◽  
Glass Crystal ◽  
Crystal Interfaces

Investigations of glass/crystal interfaces using atomic-scale models underlined structural changes in the glass phase as it accommodates the underlying crystal structure.

scholarly journals Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
M.-J. Caturla ◽  
T. Díaz de la Rubia ◽  
M. Jaraiz ◽  
G.H. Gilmer
Keyword(s):  
Ion Implantation ◽  
Low Temperatures ◽  
Kinetic Monte Carlo ◽  
Atomic Scale ◽  
Multiple Time ◽  
Multiple Time Scale ◽  
Primary State ◽  
Defect Diffusion ◽  
Dose Accumulation ◽  
Mc Simulation

AbstractWe present results of multiple-time-scale simulations of 5, 10 and 15 keV low temperature ion implantation of arsenic on silicon (100), followed by high temperature anneals. The simulations start with a molecular dynamics (MD) calculation of the primary state of damage after l0ps. The results are then coupled to a kinetic Monte Carlo (MC) simulation of bulk defect diffusion and clustering. Dose accumulation is achieved considering that at low temperatures the damage produced in the lattice is stable. After the desired dose is accumulated, the system is annealed at 800 °C for several seconds. The results provide information on the evolution for the damage microstructure over macroscopic length and time scales and affords direct comparison to experimental results. We discuss the database of inputs to the MC model and how it affects the diffusion process.

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