Metal-Oxide-Semiconductor System

Influence of oxide thickness nonuniformities on the tunnel current‐voltage and capacitance‐voltage characteristics of the metal‐oxide‐semiconductor system

Journal of Applied Physics ◽

10.1063/1.355307 ◽

1993 ◽

Vol 74 (9) ◽

pp. 5638-5647 ◽

Cited By ~ 33

Author(s):

Bogdan Majkusiak ◽

Andrzej Strojwas

Keyword(s):

Metal Oxide ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunnel Current ◽

Current Voltage ◽

Capacitance Voltage ◽

Semiconductor System

Download Full-text

Memory-function approach to ellipticity and Faraday rotation in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.28.4643 ◽

1983 ◽

Vol 28 (8) ◽

pp. 4643-4646 ◽

Cited By ~ 2

Author(s):

R. F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Memory Function ◽

Metal Oxide Semiconductor ◽

Function Approach ◽

Oxide Semiconductor ◽

Semiconductor System

Download Full-text

Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.72.235417 ◽

2005 ◽

Vol 72 (23) ◽

Cited By ~ 18

Author(s):

Ming-Pei Lu ◽

Ming-Jer Chen

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Energy ◽

Semiconductor System ◽

Oxide Trap

Download Full-text

Effect of a finite semiconductor substrate on the faraday rotation and ellipticity in a metal-oxide-semiconductor system

Physica B+C ◽

10.1016/0378-4363(83)90124-9 ◽

1983 ◽

Vol 121 (1-2) ◽

pp. 41-46 ◽

Cited By ~ 1

Author(s):

R.F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Substrate ◽

Semiconductor System

Download Full-text

Surface Superconductivity and the Metal-Oxide-Semiconductor System

Physical Review Letters ◽

10.1103/physrevlett.45.1203 ◽

1980 ◽

Vol 45 (14) ◽

pp. 1203-1206 ◽

Cited By ~ 6

Author(s):

W. Hanke ◽

M. J. Kelly

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Superconductivity ◽

Semiconductor System

Download Full-text

Comparison of the Faraday rotation for the two- and three-dimensional models of the inversion layer in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.27.5901 ◽

1983 ◽

Vol 27 (10) ◽

pp. 5901-5903 ◽

Cited By ~ 1

Author(s):

R. F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Inversion Layer ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor System ◽

Dimensional Models ◽

Three Dimensional Models

Download Full-text

Suppressed Boron Penetration in p+ poly-Si/Al2O3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al2O3 Surface

10.7567/ssdm.2001.b-9-5 ◽

2001 ◽

Author(s):

Heung-Jae Cho ◽

Dae-Gyu Park ◽

Kwan-Yong Lim ◽

Jung-Kyu Ko ◽

In-Seok Yeo ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Remote Plasma ◽

Plasma Nitridation ◽

Semiconductor System ◽

Boron Penetration

Download Full-text

An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.424 ◽

2000 ◽

Vol 39 (Part 1, No. 2A) ◽

pp. 424-431 ◽

Cited By ~ 1

Author(s):

Hiroshi Nakatsuji ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Dioxide Film ◽

Direct Tunneling ◽

Semiconductor System ◽

Direct Tunneling Current ◽

Dioxide Film

Download Full-text

Effect of a finite oxide layer on the Faraday rotation and ellipticity in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.31.5208 ◽

1985 ◽

Vol 31 (8) ◽

pp. 5208-5211 ◽

Cited By ~ 3

Author(s):

A. Khandker ◽

R. F. O’Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Faraday Rotation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor System

Download Full-text

Quantitative inelastic tunneling spectroscopy in the silicon metal-oxide-semiconductor system

Applied Physics Letters ◽

10.1063/1.120106 ◽

1997 ◽

Vol 71 (17) ◽

pp. 2523-2525 ◽

Cited By ~ 31

Author(s):

Whye-Kei Lye ◽

Eiji Hasegawa ◽

Tso-Ping Ma ◽

Richard C. Barker ◽

Yin Hu ◽

...

Keyword(s):

Metal Oxide ◽

Tunneling Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor System ◽

Inelastic Tunneling

Download Full-text