Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system

Ming-Pei Lu; Ming-Jer Chen

doi:10.1103/physrevb.72.235417

Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.72.235417 ◽

2005 ◽

Vol 72 (23) ◽

Cited By ~ 18

Author(s):

Ming-Pei Lu ◽

Ming-Jer Chen

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Energy ◽

Semiconductor System ◽

Oxide Trap

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Coulomb energy and correlations of inversion-layer electrons in metal-oxide-semiconductor field-effect transistor devices

Physical Review B ◽

10.1103/physrevb.38.10787 ◽

1988 ◽

Vol 38 (15) ◽

pp. 10787-10790 ◽

Cited By ~ 7

Author(s):

A. Widom ◽

R. Tao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Energy ◽

Effect Transistor

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Influence of oxide thickness nonuniformities on the tunnel current‐voltage and capacitance‐voltage characteristics of the metal‐oxide‐semiconductor system

Journal of Applied Physics ◽

10.1063/1.355307 ◽

1993 ◽

Vol 74 (9) ◽

pp. 5638-5647 ◽

Cited By ~ 33

Author(s):

Bogdan Majkusiak ◽

Andrzej Strojwas

Keyword(s):

Metal Oxide ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunnel Current ◽

Current Voltage ◽

Capacitance Voltage ◽

Semiconductor System

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Memory-function approach to ellipticity and Faraday rotation in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.28.4643 ◽

1983 ◽

Vol 28 (8) ◽

pp. 4643-4646 ◽

Cited By ~ 2

Author(s):

R. F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Memory Function ◽

Metal Oxide Semiconductor ◽

Function Approach ◽

Oxide Semiconductor ◽

Semiconductor System

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Estimation of near-interface oxide trap density at SiO2/SiC metal-oxide-semiconductor interfaces by transient capacitance measurements at various temperatures

Journal of Applied Physics ◽

10.1063/1.4961871 ◽

2016 ◽

Vol 120 (8) ◽

pp. 085710 ◽

Cited By ~ 20

Author(s):

Yuki Fujino ◽

Koji Kita

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Capacitance Measurements ◽

Semiconductor Interfaces ◽

Transient Capacitance ◽

Oxide Trap

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Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices

IEEE Transactions on Nuclear Science ◽

10.1109/23.658981 ◽

1997 ◽

Vol 44 (6) ◽

pp. 2001-2006 ◽

Cited By ~ 28

Author(s):

F. Saigne ◽

L. Dusseau ◽

J. Fesquet ◽

J. Gasiot ◽

R. Ecoffet ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Effects ◽

Experimental Validation ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Trap Level ◽

Oxide Trap

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Effect of a finite semiconductor substrate on the faraday rotation and ellipticity in a metal-oxide-semiconductor system

Physica B+C ◽

10.1016/0378-4363(83)90124-9 ◽

1983 ◽

Vol 121 (1-2) ◽

pp. 41-46 ◽

Cited By ~ 1

Author(s):

R.F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Substrate ◽

Semiconductor System

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Surface Superconductivity and the Metal-Oxide-Semiconductor System

Physical Review Letters ◽

10.1103/physrevlett.45.1203 ◽

1980 ◽

Vol 45 (14) ◽

pp. 1203-1206 ◽

Cited By ~ 6

Author(s):

W. Hanke ◽

M. J. Kelly

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Superconductivity ◽

Semiconductor System

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Comparison of the Faraday rotation for the two- and three-dimensional models of the inversion layer in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.27.5901 ◽

1983 ◽

Vol 27 (10) ◽

pp. 5901-5903 ◽

Cited By ~ 1

Author(s):

R. F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Inversion Layer ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor System ◽

Dimensional Models ◽

Three Dimensional Models

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Extraction of slow oxide trap concentration profiles in metal–oxide–semiconductor transistors using the charge pumping method

Journal of Applied Physics ◽

10.1063/1.361786 ◽

1996 ◽

Vol 79 (8) ◽

pp. 4187 ◽

Cited By ~ 61

Author(s):

Y. Maneglia ◽

D. Bauza

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Concentration Profiles ◽

Trap Concentration ◽

Charge Pumping ◽

Oxide Trap

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Evaluation of the Coulomb energy for single‐electron interface trapping in sub‐μm metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.356194 ◽

1994 ◽

Vol 75 (6) ◽

pp. 2970-2979 ◽

Cited By ~ 39

Author(s):

H. H. Mueller ◽

D. Wörle ◽

M. Schulz

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Coulomb Energy

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