Comparison of the Faraday rotation for the two- and three-dimensional models of the inversion layer in a metal-oxide-semiconductor system

1983 ◽  
Vol 27 (10) ◽  
pp. 5901-5903 ◽  
Author(s):  
R. F. O'Connell ◽  
G. Wallace
Keyword(s):  
Metal Oxide ◽  
Faraday Rotation ◽  
Inversion Layer ◽  
Three Dimensional ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor System ◽  
Dimensional Models ◽  
Three Dimensional Models

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

Sign in / Sign up

Export Citation Format

Share Document