Influence of oxide thickness nonuniformities on the tunnel current‐voltage and capacitance‐voltage characteristics of the metal‐oxide‐semiconductor system

1993 ◽  
Vol 74 (9) ◽  
pp. 5638-5647 ◽  
Author(s):  
Bogdan Majkusiak ◽  
Andrzej Strojwas
Keyword(s):  
Metal Oxide ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tunnel Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Semiconductor System

A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system

2015 ◽  
Vol 147 ◽  
pp. 273-276 ◽  
Author(s):  
Jun Lin ◽  
Scott Monaghan ◽  
Karim Cherkaoui ◽  
Ian Povey ◽  
Éamon O’Connor ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Capacitance Voltage ◽  
Semiconductor System ◽  
Voltage Hysteresis

scholarly journals Study of Interface Charge Densities for ZrO2and HfO2Based Metal-Oxide-Semiconductor Devices

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
N. P. Maity ◽  
Reshmi Maity ◽  
R. K. Thapa ◽  
S. Baishya
Keyword(s):  
Metal Oxide ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Densities ◽  
Interface Charge ◽  
Capacitance Voltage ◽  
P Type ◽  
Mos Structures ◽  
Good Agreement

A thickness-dependent interfacial distribution of oxide charges for thin metal oxide semiconductor (MOS) structures using high-kmaterials ZrO2and HfO2has been methodically investigated. The interface charge densities are analyzed using capacitance-voltage (C-V) method and also conductance (G-V) method. It indicates that, by reducing the effective oxide thickness (EOT), the interface charge densities (Dit) increases linearly. For the same EOT,Dithas been found for the materials to be of the order of 1012 cm−2 eV−1and it is originated to be in good agreement with published fabrication results at p-type doping level of1×1017 cm−3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

scholarly journals Comparative Study ofSiO2,Al2O3, and BeO Ultrathin Interfacial Barrier Layers in Si Metal-Oxide-Semiconductor Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
J. H. Yum ◽  
J. Oh ◽  
Todd. W. Hudnall ◽  
C. W. Bielawski ◽  
G. Bersuker ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Performance ◽  
Field Effect Transistors ◽  
Beryllium Oxide ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Effective Electron

In a previous study, we have demonstrated that beryllium oxide (BeO) film grown by atomic layer deposition (ALD) on Si and III-V MOS devices has excellent electrical and physical characteristics. In this paper, we compare the electrical characteristics of inserting an ultrathin interfacial barrier layer such as SiO2, Al2O3, or BeO between the HfO2gate dielectric and Si substrate in metal oxide semiconductor capacitors (MOSCAPs) and n-channel inversion type metal oxide semiconductor field effect transistors (MOSFETs). Si MOSCAPs and MOSFETs with a BeO/HfO2gate stack exhibited high performance and reliability characteristics, including a 34% improvement in drive current, slightly better reduction in subthreshold swing, 42% increase in effective electron mobility at an electric field of 1 MV/cm, slightly low equivalent oxide thickness, less stress-induced flat-band voltage shift, less stress induced leakage current, and less interface charge.

Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures

1998 ◽  
Vol 72 (18) ◽  
pp. 2286-2288 ◽  
Author(s):  
K. Rim ◽  
T. O. Mitchell ◽  
D. V. Singh ◽  
J. L. Hoyt ◽  
J. F. Gibbons ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Offsets ◽  
Capacitance Voltage
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