Effect of a finite oxide layer on the Faraday rotation and ellipticity in a metal-oxide-semiconductor system

A. Khandker; R. F. O’Connell; G. Wallace

doi:10.1103/physrevb.31.5208

Effect of a finite oxide layer on the Faraday rotation and ellipticity in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.31.5208 ◽

1985 ◽

Vol 31 (8) ◽

pp. 5208-5211 ◽

Cited By ~ 3

Author(s):

A. Khandker ◽

R. F. O’Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Faraday Rotation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor System

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Memory-function approach to ellipticity and Faraday rotation in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.28.4643 ◽

1983 ◽

Vol 28 (8) ◽

pp. 4643-4646 ◽

Cited By ~ 2

Author(s):

R. F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Memory Function ◽

Metal Oxide Semiconductor ◽

Function Approach ◽

Oxide Semiconductor ◽

Semiconductor System

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Effect of a finite semiconductor substrate on the faraday rotation and ellipticity in a metal-oxide-semiconductor system

Physica B+C ◽

10.1016/0378-4363(83)90124-9 ◽

1983 ◽

Vol 121 (1-2) ◽

pp. 41-46 ◽

Cited By ~ 1

Author(s):

R.F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Substrate ◽

Semiconductor System

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Comparison of the Faraday rotation for the two- and three-dimensional models of the inversion layer in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.27.5901 ◽

1983 ◽

Vol 27 (10) ◽

pp. 5901-5903 ◽

Cited By ~ 1

Author(s):

R. F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Inversion Layer ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor System ◽

Dimensional Models ◽

Three Dimensional Models

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Ellipticity and Faraday rotation due to a two-dimensional electron gas in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.26.2231 ◽

1982 ◽

Vol 26 (4) ◽

pp. 2231-2234 ◽

Cited By ~ 34

Author(s):

R. F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Electron Gas ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Semiconductor System ◽

Dimensional Electron Gas

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On the optimum method of analysis of Faraday rotation and ellipticity measurements in a metal-oxide-semiconductor system

Journal of Physics and Chemistry of Solids ◽

10.1016/0022-3697(83)90143-9 ◽

1983 ◽

Vol 44 (10) ◽

pp. 951-953

Author(s):

R.F. O'Connell ◽

G. Wallace

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor System

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Theoretical determination of the admittance of the metal gate in a metal-oxide-semiconductor system and effect of the gate on Faraday rotation and ellipticity

Physica B+C ◽

10.1016/0378-4363(85)90058-0 ◽

1985 ◽

Vol 132 (2) ◽

pp. 145-152

Author(s):

A. Khandker ◽

R.F. O'Connell

Keyword(s):

Metal Oxide ◽

Faraday Rotation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Theoretical Determination ◽

Semiconductor System

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Influence of oxide thickness nonuniformities on the tunnel current‐voltage and capacitance‐voltage characteristics of the metal‐oxide‐semiconductor system

Journal of Applied Physics ◽

10.1063/1.355307 ◽

1993 ◽

Vol 74 (9) ◽

pp. 5638-5647 ◽

Cited By ~ 33

Author(s):

Bogdan Majkusiak ◽

Andrzej Strojwas

Keyword(s):

Metal Oxide ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunnel Current ◽

Current Voltage ◽

Capacitance Voltage ◽

Semiconductor System

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Scaling size distribution of oxide defects, trema‐fractal oxide layer, and breakdown statistics of metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.101414 ◽

1989 ◽

Vol 54 (9) ◽

pp. 834-836 ◽

Cited By ~ 1

Author(s):

R. D. S. Yadava

Keyword(s):

Metal Oxide ◽

Size Distribution ◽

Oxide Layer ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Defects

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Oxide-trap-enhanced Coulomb energy in a metal-oxide-semiconductor system

Physical Review B ◽

10.1103/physrevb.72.235417 ◽

2005 ◽

Vol 72 (23) ◽

Cited By ~ 18

Author(s):

Ming-Pei Lu ◽

Ming-Jer Chen

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Energy ◽

Semiconductor System ◽

Oxide Trap

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Surface Superconductivity and the Metal-Oxide-Semiconductor System

Physical Review Letters ◽

10.1103/physrevlett.45.1203 ◽

1980 ◽

Vol 45 (14) ◽

pp. 1203-1206 ◽

Cited By ~ 6

Author(s):

W. Hanke ◽

M. J. Kelly

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Surface Superconductivity ◽

Semiconductor System

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