Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

Tae-Eon Bae; Kimihiko Kato; Ryota Suzuki; Ryosho Nakane; Mitsuru Takenaka; Shinichi Takagi

doi:10.1063/1.5028529

Influence of impurity concentration in Ge sources on electrical properties of Ge/Si hetero-junction tunneling field-effect transistors

Applied Physics Letters ◽

10.1063/1.5028529 ◽

2018 ◽

Vol 113 (6) ◽

pp. 062103 ◽

Cited By ~ 10

Author(s):

Tae-Eon Bae ◽

Kimihiko Kato ◽

Ryota Suzuki ◽

Ryosho Nakane ◽

Mitsuru Takenaka ◽

...

Keyword(s):

Electrical Properties ◽

Impurity Concentration ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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ZnO/Si and ZnO/Ge bilayer tunneling field effect transistors: Experimental characterization of electrical properties

Journal of Applied Physics ◽

10.1063/1.5088893 ◽

2019 ◽

Vol 125 (19) ◽

pp. 195701 ◽

Cited By ~ 7

Author(s):

Kimihiko Kato ◽

Hiroaki Matsui ◽

Hitoshi Tabata ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Experimental Characterization ◽

Tunneling Field Effect Transistors

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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.885 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 885-890 ◽

Cited By ~ 3

Author(s):

Min LIAO ◽

Hiroshi ISHIWARA ◽

Shun-ichiro OHMI

Keyword(s):

Electrical Properties ◽

Growth Mechanism ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

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Electrical Properties of Thermally Annealed β-Ga2O3 Metal-Semiconductor Field-Effect Transistors with Pt/Au Schottky Contacts

ECS Journal of Solid State Science and Technology ◽

10.1149/2.0231907jss ◽

2019 ◽

Vol 8 (7) ◽

pp. Q3122-Q3125

Author(s):

Suhyun Kim ◽

Jihyun Kim

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Field Effect Transistors ◽

Schottky Contacts

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Designing band-to-band tunneling field-effect transistors with 2D semiconductors for next-generation low-power VLSI

2015 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2015.7409682 ◽

2015 ◽

Cited By ~ 11

Author(s):

Wei Cao ◽

Junkai Jiang ◽

Jiahao Kang ◽

Deblina Sarkar ◽

Wei Liu ◽

...

Keyword(s):

Low Power ◽

Field Effect ◽

Field Effect Transistors ◽

Next Generation ◽

2D Semiconductors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors

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Study of fully-depleted Ge double-gate n-type Tunneling Field-Effect Transistors for improvement in on-state current and sub-threshold swing

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2017.08.014 ◽

2018 ◽

Vol 95 ◽

pp. 51-58 ◽

Cited By ~ 3

Author(s):

Xiangyu Liu ◽

Huiyong Hu ◽

Meng Wang ◽

Heming Zhang ◽

Shimin Cui ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Double Gate ◽

Fully Depleted ◽

Tunneling Field Effect Transistors

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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3510502 ◽

2010 ◽

Vol 108 (10) ◽

pp. 104503 ◽

Cited By ~ 11

Author(s):

M. Abul Khayer ◽

Roger K. Lake

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Band To Band Tunneling ◽

Tunneling Field Effect Transistors ◽

Gan Nanowire ◽

And Performance

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Self-aligned fabrication of 10 nm wide asymmetric trenches for Si/SiGe heterojunction tunneling field effect transistors using nanoimprint lithography, shadow evaporation, and etching

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3237138 ◽

2009 ◽

Vol 27 (6) ◽

pp. 2790 ◽

Cited By ~ 12

Author(s):

Chao Wang ◽

Stephen Y. Chou

Keyword(s):

Nanoimprint Lithography ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors ◽

Shadow Evaporation

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Are Si/SiGe Tunneling Field-Effect Transistors a Good Idea?

ECS Meeting Abstracts ◽

10.1149/ma2010-02/30/1892 ◽

2010 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Tunneling Field Effect Transistors

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Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2/Si structure

Journal of the Ceramic Society of Japan ◽

10.2109/jcersj2.118.1013 ◽

2010 ◽

Vol 118 (1383) ◽

pp. 1013-1016 ◽

Cited By ~ 1

Author(s):

Gwang-Geun LEE ◽

Hui-Seong HAN ◽

Yun-Soo CHOI ◽

Byung-Eun PARK

Keyword(s):

Electrical Properties ◽

Field Effect ◽

Polyvinylidene Fluoride ◽

Field Effect Transistors

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Design and Modeling of Line-Tunneling Field-Effect Transistors Using Low-Bandgap Semiconductors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2316217 ◽

2014 ◽

Vol 61 (6) ◽

pp. 1907-1913 ◽

Cited By ~ 14

Author(s):

Chun-Hsing Shih ◽

Nguyen Dang Chien

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Bandgap ◽

Tunneling Field Effect Transistors ◽

Bandgap Semiconductors

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