Role of silicon surface in the removal of point defects in ultrashallow junctions

1996 ◽  
Vol 69 (15) ◽  
pp. 2228-2230 ◽  
Author(s):  
A. Sultan ◽  
S. Banerjee ◽  
S. List ◽  
M. Rodder
Keyword(s):  
Point Defects ◽  
Silicon Surface ◽  
Ultrashallow Junctions

Role of induced quadrupoles in the simulation of intrinsic point defects in AgCl and NaCl

1993 ◽  
Vol 48 (10) ◽  
pp. 6839-6853 ◽  
Author(s):  
Radha D. Banhatti ◽  
Y. V. G. S. Murti
Keyword(s):  
Point Defects ◽  
Intrinsic Point Defects

scholarly journals Point Defects in InGaN/GaN Core–Shell Nanorods: Role of the Regrowth Interface

Nano Express ◽  
2021 ◽  
Vol 2 (1) ◽  
pp. 014005 ◽  
Author(s):  
K Loeto ◽  
G Kusch ◽  
P-M Coulon ◽  
SM Fairclough ◽  
E Le Boulbar ◽  
...  
Keyword(s):  
Point Defects ◽  
Core Shell

Self Diffusion in SiC: the Role of Intrinsic Point Defects

2001 ◽  
Vol 353-356 ◽  
pp. 323-326 ◽  
Author(s):  
Alexander Mattausch ◽  
M. Bockstedte ◽  
Oleg Pankratov
Keyword(s):  
Point Defects ◽  
Intrinsic Point Defects ◽  
Self Diffusion

Point defects and blue LED efficiency: the critical role of indium

2021 ◽  
Author(s):  
Thomas Weatherley ◽  
Wei Liu ◽  
Camille Haller ◽  
Yao Chen ◽  
Duncan T. L. Alexander ◽  
...  
Keyword(s):  
Point Defects ◽  
Critical Role ◽  
Blue Led

scholarly journals From Point to Filament Defects in Hybrid Nematic Films

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Cesare Chiccoli ◽  
Paolo Pasini ◽  
Claudio Zannoni ◽  
Gregor Skačej ◽  
Hiroyuki Yoshida ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Point Defects ◽  
Elastic Constants ◽  
3D Structure ◽  
Support Surface ◽  
Hybrid Films ◽  
Surface Ordering ◽  
Polarized Microscopy ◽  
Homeotropic Alignment

AbstractWe have studied nematic hybrid films with homeotropic alignment at the top surface and various controlled degrees of in plane ordering, going from a random degenerate organization to a completely uniform alignment along one direction, at the bottom one. We show, by Monte Carlo (MC) computer simulations and experiments on photopatterned films with the bottom support surface fabricated with in-plane order similar to the simulated ones, that the point defects observed in the case of random planar orientations at the bottom tend to arrange along a filament as the surface ordering is sufficiently increased. MC simulations complement the polarized microscopy texture observations allowing to inspect the 3D structure of the defects and examine the role of elastic constants.

Electronic states created inp‐Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

1993 ◽  
Vol 62 (9) ◽  
pp. 958-960 ◽  
Author(s):  
O. O. Awadelkarim ◽  
T. Gu ◽  
P. I. Mikulan ◽  
R. A. Ditizio ◽  
S. J. Fonash ◽  
...  
Keyword(s):  
Point Defects ◽  
Plasma Etching ◽  
Electronic States
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