Enhanced Data Retention Characteristic on SOHOS-Type Nonvolatile Flash Memory with CF4-Plasma-Induced Deep Electron Trap Level

2019 ◽  
Vol 35 (2) ◽  
pp. 257-263 ◽  
Author(s):  
Chih Ren Hsieh ◽  
Yung-Yu Chen ◽  
Wen-Sin Lin ◽  
Gray Lin ◽  
Jen-Chung Lou
Keyword(s):  
Flash Memory ◽  
Electron Trap ◽  
Trap Level ◽  
Data Retention ◽  
Retention Characteristic ◽  
Deep Electron Trap

The Effect of Passivation SiON Layer on the Data Retention Reliability of NAND Flash

2009 ◽  
Vol 1195 ◽  
Author(s):  
Younggeun Jang ◽  
Kwangwook Lee ◽  
Eunsoo Kim ◽  
Jonghye Cho ◽  
Jungmyoung Shim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Silicon Oxynitride ◽  
Nand Flash ◽  
Retention Behavior ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Retention Characteristic ◽  
Final Data ◽  
Two Parameters ◽  
Mobile Ions

AbstractData retention is one of the major device reliabilities of NAND Flash memory. We found that the lower Refractive Index (RI) of the Passivation Silicon Oxynitride (SiON) layer deposited by PECVD, the better data retention behavior was achieved. The hydrogen content and the stress analysis of the films are analyzed to find out which is more important in this case. Generally, when the RI of SiON decreases, both parameters also decrease, so it is impossible to find out which parameter is major factor of data retention. To analyze the effects of two parameters separately, we applied two conditions which had the same H contents but quite different stress values. The final data retention levels are same in both conditions. In addition, even if the layer has the same H content, the retention characteristic is changed by how hydrogen is bonded in the film. In conclusion, the data retention characteristic can be explained by mobile ions generated by the hydrogen weakly bonded in PECVD SiON films in our experiment.

Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory

2019 ◽  
Vol 153 ◽  
pp. 8-11 ◽  
Author(s):  
Sangmin Lee ◽  
Jeonghwan Song ◽  
Seokjae Lim ◽  
Solomon Amsalu Chekol ◽  
Hyunsang Hwang
Keyword(s):  
Data Retention ◽  
Storage Class Memory ◽  
Retention Characteristic ◽  
Conductive Bridge

The Effect of Trapped Charge Distributions on Data Retention Characteristics of nand Flash Memory Cells

2007 ◽  
Vol 28 (8) ◽  
pp. 750-752 ◽  
Author(s):  
M. Park ◽  
Kangdeog Suh ◽  
Keonsoo Kim ◽  
S. Hur ◽  
K. Kim ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cells ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Data Retention ◽  
Charge Distributions ◽  
Retention Characteristics ◽  
Trapped Charge
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