Characterisation of a deep electron trap in molecular-beam epitaxial InP

1981 ◽  
Vol 17 (18) ◽  
pp. 669 ◽  
Author(s):  
R.M. Park ◽  
C.R. Stanley
Keyword(s):  
Molecular Beam ◽  
Electron Trap ◽  
Molecular Beam Epitaxial ◽  
Deep Electron Trap

A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN

2018 ◽  
Vol 51 (14) ◽  
pp. 14LT01 ◽  
Author(s):  
Ayush Pandey ◽  
Aniruddha Bhattacharya ◽  
Shaobo Cheng ◽  
Gianluigi A Botton ◽  
Zetian Mi ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Electron Trap ◽  
Molecular Beam Epitaxial ◽  
Lattice Matched

DLTS Study on Annealed Low-Temperature GaAs Layers with An n-I(LT)-n Structure Grown by MBE

1995 ◽  
Vol 378 ◽  
Author(s):  
Tsai-Cheng Lin ◽  
Hiromasa T Kaibe ◽  
Tsugunori Okumura
Keyword(s):  
Low Temperature ◽  
Molecular Beam ◽  
Deep Level ◽  
Gaas Layer ◽  
Electron Trap ◽  
Molecular Beam Epitaxial ◽  
Sample Structure ◽  
Transient Spectroscopy ◽  
Low Temperature Gaas ◽  
Substrate Temperatures

AbstractDeep levels in the annealed low-temperature molecular beam epitaxial (LT-MBE) GaAs layer were successfully characterized by using the capacitance deep-level transient spectroscopy (C-DLTS) as well as photocapacitance quenching technique in combination with a unique sample structure. In this work, we have fabricated the samples by inserting the LT-GaAs layer into two n-type semi-conductive layers, like a sandwich (n-LT-n structure), grown at normal substrate temperatures. DLTS measurements have revealed that one electron trap dominates the annealed LT-MBE GaAs. The dominant electron trap was very similar to the so-called EL3 level. Moreover, we found the midgap level appeared upon 800-900°C RTA, although no midgap level was detected in the as-grown n-LT-n sample (annealed at 620°C) and confirmed with photoquenching measurements that it is the EL2 level.

Dominant Electron Trap with Metastable State in Molecular Beam Epitaxial GaAs Grown at Low Temperatures

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1775-1780 ◽  
Author(s):  
Tamotsu Hashizume ◽  
Shunsuke Shiobara ◽  
Hideki Hasegawa
Keyword(s):  
Metastable State ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Electron Trap ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Production of the midgap electron trap (EL2) in molecular‐beam‐epitaxial GaAs by rapid thermal processing

1987 ◽  
Vol 61 (3) ◽  
pp. 1215-1217 ◽  
Author(s):  
Akio Kitagawa ◽  
Akira Usami ◽  
Takao Wada ◽  
Yutaka Tokuda ◽  
Hiroyuki Kano
Keyword(s):  
Thermal Processing ◽  
Molecular Beam ◽  
Rapid Thermal Processing ◽  
Electron Trap ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Magnetic anisotropy and microstructure in molecular beam epitaxial FePt (110)/MgO (110)

1998 ◽  
Vol 84 (2) ◽  
pp. 934-939 ◽  
Author(s):  
R. F. C. Farrow ◽  
D. Weller ◽  
R. F. Marks ◽  
M. F. Toney ◽  
David J. Smith ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of low‐resistivity ZnSe films

1979 ◽  
Vol 35 (2) ◽  
pp. 97-98 ◽  
Author(s):  
Takafumi Yao ◽  
Yunosuke Makita ◽  
Shigeru Maekawa
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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