Fabrication of High-Quality Polycrystalline Silicon Film by Crystallization of Amorphous Silicon Film Using AlCl3 Vapor for Thin Film Transistors

2011 ◽  
Vol 158 (4) ◽  
pp. H374 ◽  
Author(s):  
Kyung Min Ahn ◽  
Seung Mo Kang ◽  
Byung Tae Ahn
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
High Quality ◽  
Amorphous Silicon Film ◽  
Polycrystalline Silicon Film

High Performance Thin Film Transistors for Scanner Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Silicon Film

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.

A Thin-Film Transistor Using a Reactive-Ion-Beam-Deposited Polycrystalline Silicon Film

1988 ◽  
Vol 27 (Part 1, No. 6) ◽  
pp. 1002-1004 ◽  
Author(s):  
Kenji Nakazawa ◽  
Hiroshi Yamada ◽  
Shigeto Kohda ◽  
Yasuhiro Torii
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Ion Beam ◽  
Thin Film Transistor ◽  
Silicon Film ◽  
Polycrystalline Silicon Film

Ambipolar Field Effect Transistor

1985 ◽  
Vol 49 ◽  
Author(s):  
H. Pfleiderer ◽  
W. Kusian
Keyword(s):  
Thin Film ◽  
Theoretical Model ◽  
Amorphous Silicon ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Thin Film Transistor ◽  
Silicon Film ◽  
Amorphous Silicon Film ◽  
Effect Transistor

AbstractThe characteristics of a thin-film transistor using an amorphous-silicon film are presented. The appearance of electron and hole channels is made possible by ohmic source and drain contacts. A theoretical model explains the phenomena.

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