High Performance Thin Film Transistors for Scanner Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Silicon Film

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.

scholarly journals Technology, performance and degradation characteristics of SLS ELA thin film transistors

2013 ◽  
Vol 26 (3) ◽  
pp. 247-280
Author(s):  
Despina Moschou ◽  
Dimitrios Kouvatsos ◽  
Giannis Kontogiannopoulos ◽  
Filippos Farmakis ◽  
Apostolos Voutsas
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Flat Panel Displays ◽  
Technological Parameters ◽  
Large Area ◽  
Silicon Thin Film

Low temperature polycrystalline silicon thin film transistors (LTPS poly-Si TFTs) are essential for large area electronics and high performance flat panel displays. In recent years, LTPS TFT performance has substantially increased due to the important breakthroughs in the field of polycrystalline silicon crystallization and also due to the optimization of the process steps that differ from those of typical MOSFETs, mainly because of the requirement for low temperature procedures. In this review we present the electrical characteristics of polycrystalline silicon TFTs, crystallized with different variations of the advanced SLS ELA technique, and the determination of process technological parameters that affect the device performance, in order to further optimize the production of such high performance transistors, in terms of poly-Si microstructure, channel dimensions and topology. Also, the effect of these fabrication parameters on device degradation characteristics is studied, with an attempt to model and predict degradation characteristics.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

High‐performance thin‐film transistors from optimized polycrystalline silicon films

1987 ◽  
Vol 50 (26) ◽  
pp. 1894-1896 ◽  
Author(s):  
D. B. Meakin ◽  
P. A. Coxon ◽  
P. Migliorato ◽  
J. Stoemenos ◽  
N. A. Economou
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Films ◽  
Polycrystalline Silicon Films
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