High-Quality Polycrystalline Silicon Film Crystallized from Amorphous Silicon Film using NiCl2Vapor

2011 ◽  
Vol 159 (1) ◽  
pp. H29-H32 ◽  
Author(s):  
Seung Mo Kang ◽  
Kyung Min Ahn ◽  
Byung Tae Ahn
Keyword(s):  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
High Quality ◽  
Amorphous Silicon Film ◽  
Polycrystalline Silicon Film

Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates

2015 ◽  
Vol 51 (21) ◽  
pp. 4417-4420 ◽  
Author(s):  
Zhongrong Shen ◽  
Takashi Masuda ◽  
Hideyuki Takagishi ◽  
Keisuke Ohdaira ◽  
Tatsuya Shimoda
Keyword(s):  
Thermal Decomposition ◽  
Amorphous Silicon ◽  
High Throughput ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Cost Reduction ◽  
Film Formation ◽  
Silicon Film ◽  
High Quality ◽  
Amorphous Silicon Film

Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350–400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Pulsed Laser-Induced Amorphization of Polycrystalline Silicon Film

1990 ◽  
Vol 29 (Part 2, No. 4) ◽  
pp. L548-L551 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Masaki Hara ◽  
Setsuo Usui
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Pulsed Laser ◽  
Polycrystalline Silicon Film
Sign in / Sign up

Export Citation Format

Share Document