Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)
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Study of 1/f noise in III-V nitride based MODFETs at low drain bias

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836424 ◽

2003 ◽

Author(s):

W. Ho ◽

C. Suryaa ◽

K.Y. Tong

Keyword(s):

Drain Bias

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Smart ferroelectric materials for sensors and mechatronic device applications

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836410 ◽

2003 ◽

Cited By ~ 1

Author(s):

H.L.W. Chan

Keyword(s):

Ferroelectric Materials ◽

Device Applications

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A testing instrument for dynamic contact resistance

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836423 ◽

2003 ◽

Author(s):

Li Wenhua ◽

Li Zhigang

Keyword(s):

Contact Resistance ◽

Dynamic Contact ◽

Testing Instrument

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Photoconductive detection of millimetre waves using proton bombarded GaAs

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836397 ◽

2003 ◽

Author(s):

C.S. Wong ◽

G.M. Dai ◽

H.K. Tsang

Keyword(s):

Millimetre Waves

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Photoluminescence of rapid-thermal annealed Mg-doped GaN films

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836429 ◽

2003 ◽

Author(s):

L.S. Wang ◽

W.K. Fong ◽

C. Surya ◽

K.W. Cheah ◽

W.H. Zheng ◽

...

Keyword(s):

Mg Doped

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A physical approach to enhance BSIM3 NQS model for fast transient simulation

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836421 ◽

2003 ◽

Cited By ~ 1

Author(s):

Wai-Kit Lee ◽

Mansun Chan ◽

P.K. Ko

Keyword(s):

Transient Simulation ◽

Physical Approach ◽

Fast Transient

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The influence of deposition substrate temperature on the performance of organic electroluminescent devices

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836399 ◽

2003 ◽

Author(s):

Z.Q. Gao ◽

C.S. Lee ◽

S.T. Lee

Keyword(s):

Substrate Temperature ◽

Electroluminescent Devices ◽

Organic Electroluminescent ◽

Deposition Substrate

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Nature of traps in gate silicon oxynitride of MOS devices

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836408 ◽

2003 ◽

Author(s):

Yu.N. Morokov ◽

V.A. Gritsenko ◽

Yu.N. Novikov ◽

J.B. Xu ◽

L.W.M. Lau ◽

...

Keyword(s):

Silicon Oxynitride ◽

Mos Devices

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Improved thin-film transistor (TFT) characteristics on chemical-mechanically polished polycrystalline silicon film

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836403 ◽

2003 ◽

Cited By ~ 2

Author(s):

A.C.K. Chan ◽

Mansun Chan ◽

P.K. Ko

Keyword(s):

Thin Film ◽

Polycrystalline Silicon ◽

Thin Film Transistor ◽

Silicon Film ◽

Polycrystalline Silicon Film

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900 MHz 7.4 W SiGe heterojunction bipolar transistor

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) ◽

10.1109/hkedm.1999.836426 ◽

2003 ◽

Author(s):

Jinshu Zhang ◽

Hongyong Jia ◽

Pei-Hsin Tsien ◽

Tai-Chin Lo ◽

Zengmin Yang ◽

...

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Study of 1/f noise in III-V nitride based MODFETs at low drain bias

Smart ferroelectric materials for sensors and mechatronic device applications

A testing instrument for dynamic contact resistance

Photoconductive detection of millimetre waves using proton bombarded GaAs

Photoluminescence of rapid-thermal annealed Mg-doped GaN films

A physical approach to enhance BSIM3 NQS model for fast transient simulation

The influence of deposition substrate temperature on the performance of organic electroluminescent devices

Nature of traps in gate silicon oxynitride of MOS devices

Improved thin-film transistor (TFT) characteristics on chemical-mechanically polished polycrystalline silicon film

900 MHz 7.4 W SiGe heterojunction bipolar transistor

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)
Latest Publications