scholarly journals Plasma Technology for Poly-crystaline Silicon Thin Film Transister Manufacturing. Polycrystalline Silicon Film Growth by Ultrahigh-vacuum Sputtering System.

Shinku ◽  
2001 ◽  
Vol 44 (6) ◽  
pp. 578-582
Author(s):  
Yasuyoshi MISHIMA
2008 ◽  
Vol 37 (6) ◽  
pp. 349-355
Author(s):  
A. S. Turtsevich ◽  
O. Yu. Nalivaiko ◽  
V. A. Solodukha ◽  
V. V. Glukhmanchuk ◽  
N. G. Tsirkunova ◽  
...  

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Baba ◽  
T. Matsuyama ◽  
T. Sawada ◽  
T. Takahama ◽  
K. Wakisaka ◽  
...  

ABSTRACTWe succeeded, for the first time, in depositing a silicon film which features 1000Å-wide single-crystalline grains embedded in a matrix of amorphous tissue. The deposition was done by plasma-enhanced CVD from silane diluted with hydrogen at a considerably high temperature (550°C). 5pm-thick undoped amorphous silicon film was deposited on the above film and was crystallized by a solid phase crystallization method. The polycrystalline silicon film which was obtained has a columnar structure and shows an extremely high electron mobility of 808 cm2/Vs.


1988 ◽  
Vol 27 (Part 1, No. 6) ◽  
pp. 1002-1004 ◽  
Author(s):  
Kenji Nakazawa ◽  
Hiroshi Yamada ◽  
Shigeto Kohda ◽  
Yasuhiro Torii

2010 ◽  
Vol 49 (3) ◽  
pp. 03CA01 ◽  
Author(s):  
Yuta Miura ◽  
Takeshi Ogura ◽  
Tomohisa Hachida ◽  
Yoshitaka Nishizaki ◽  
Takehiko Yamashita ◽  
...  

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