Thermoelectric and Electrical Properties of Si-doped InSb Thin Films

2019 ◽  
Vol 16 (24) ◽  
pp. 7-12 ◽  
Author(s):  
Hirotaka Nagata ◽  
Shigeo Yamaguchi
1976 ◽  
Vol 36 (2) ◽  
pp. 483-485 ◽  
Author(s):  
N. Kotera ◽  
T. Oi ◽  
K. Sato ◽  
J. Shigeta ◽  
N. Yamamoto ◽  
...  

2010 ◽  
Vol 8 (2) ◽  
pp. 278-281 ◽  
Author(s):  
Hideyuki Homma ◽  
Hirotaka Nagata ◽  
Shigeo Yamaguchi

2016 ◽  
Vol 4 (6) ◽  
pp. 1345-1350 ◽  
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.


1983 ◽  
Vol 54 (10) ◽  
pp. 6055-6057 ◽  
Author(s):  
G. P. Srivastava ◽  
K. N. Tripathi ◽  
N. K. Sehgal

1970 ◽  
Vol 20 (1) ◽  
pp. 84-93 ◽  
Author(s):  
J. Červenák ◽  
A. Živčáková ◽  
J. Buch

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