Structure and electrical properties of InSb thin films prepared by plasmatic sputtering

1970 ◽  
Vol 20 (1) ◽  
pp. 84-93 ◽  
Author(s):  
J. Červenák ◽  
A. Živčáková ◽  
J. Buch
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Insb Thin Films

Thermoelectric and Electrical Properties of Si-doped InSb Thin Films

2019 ◽  
Vol 16 (24) ◽  
pp. 7-12 ◽  
Author(s):  
Hirotaka Nagata ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Insb Thin Films ◽  
Si Doped

Electrical properties of InSb thin films in low noise hall generators on a ferrite substrate

1976 ◽  
Vol 36 (2) ◽  
pp. 483-485 ◽  
Author(s):  
N. Kotera ◽  
T. Oi ◽  
K. Sato ◽  
J. Shigeta ◽  
N. Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Noise ◽  
Insb Thin Films ◽  
Ferrite Substrate ◽  
Hall Generators

Electrical properties of InSb thin films with an InAsSb buffer layer grown by MOVPE

2010 ◽  
Vol 8 (2) ◽  
pp. 278-281 ◽  
Author(s):  
Hideyuki Homma ◽  
Hirotaka Nagata ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Insb Thin Films

scholarly journals Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

2016 ◽  
Vol 4 (6) ◽  
pp. 1345-1350 ◽  
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Indium Antimonide ◽  
Quantum Confinement ◽  
Pulse Electrodeposition ◽  
Electrochemically Deposited ◽  
Insb Thin Films ◽  
Moss Effect

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

Effect of laser irradiation on the electrical properties of polycrystallinep‐InSb thin films

1983 ◽  
Vol 54 (10) ◽  
pp. 6055-6057 ◽  
Author(s):  
G. P. Srivastava ◽  
K. N. Tripathi ◽  
N. K. Sehgal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Irradiation ◽  
Insb Thin Films

Thermoelectric and Electrical Properties of InSb Thin Films Prepared by Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 980 ◽  
Author(s):  
Masashi Matsumoto ◽  
Jun Yamazaki ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
A Value ◽  
Maximum Value ◽  
Insb Thin Films ◽  
Metalorganic Chemical

AbstractWe studied the thermoelectric and electrical properties of InSb thin films prepared by metalorganic chemical vapor deposition. The thermoelectric properties were evaluated using power factor (Pf =α2/Ï), which is an important criterion, and a value of 10-3 W/mK2 is a standard for practical use. Maximum value of Pf was 2.4×10-3W/mK2 at 600K for 1-μm-thick InSb, 3.4×10-3W/mK2 at 600K for 3-μm-thick InSb, and 5.8×10-3W/mK2 at 600K for 5-μm-thick InSb. On the other hand, the maximum Pf of bulk-InSb was 5.4×10-3W/mK2 at 600K.

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