Electrical properties of InSb thin films with an InAsSb buffer layer grown by MOVPE

2010 ◽  
Vol 8 (2) ◽  
pp. 278-281 ◽  
Author(s):  
Hideyuki Homma ◽  
Hirotaka Nagata ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Insb Thin Films

Effects of an ultrathin silicon oxynitride buffer layer on electrical properties of ferroelectric Bi4Ti3O12 thin films on p-Si(100) surfaces

2001 ◽  
Vol 79 (3) ◽  
pp. 403-405 ◽  
Author(s):  
E. Rokuta ◽  
Y. Hotta ◽  
T. Kubota ◽  
H. Tabata ◽  
H. Kobayashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Silicon Oxynitride

Enhancement of the Electrical Properties of GZO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer

2007 ◽  
Vol 51 (5) ◽  
pp. 1732-1735 ◽  
Author(s):  
Yeon-Keon Moon ◽  
Se-Hyun Kim ◽  
Dae-Young Moon ◽  
Woong-Sun Kim ◽  
Jong-Wan Park
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Tio2 Buffer Layer

Thermoelectric and Electrical Properties of Si-doped InSb Thin Films

2019 ◽  
Vol 16 (24) ◽  
pp. 7-12 ◽  
Author(s):  
Hirotaka Nagata ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Insb Thin Films ◽  
Si Doped

Influence of Bi3.15Nd0.85Ti3O12 Buffer Layer on Structure and Electrical Properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 Thin Films

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Current Density ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Sol Gel Process

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.

Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

2013 ◽  
Vol 774-776 ◽  
pp. 954-959
Author(s):  
Xiao Jing Wang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Hexagonal Structure ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Average Transmittance ◽  
Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

Electrical properties of InSb thin films in low noise hall generators on a ferrite substrate

1976 ◽  
Vol 36 (2) ◽  
pp. 483-485 ◽  
Author(s):  
N. Kotera ◽  
T. Oi ◽  
K. Sato ◽  
J. Shigeta ◽  
N. Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Noise ◽  
Insb Thin Films ◽  
Ferrite Substrate ◽  
Hall Generators

scholarly journals Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

2016 ◽  
Vol 4 (6) ◽  
pp. 1345-1350 ◽  
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Indium Antimonide ◽  
Quantum Confinement ◽  
Pulse Electrodeposition ◽  
Electrochemically Deposited ◽  
Insb Thin Films ◽  
Moss Effect

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

Sign in / Sign up

Export Citation Format

Share Document