Dendritic crystal regrowth and electrical properties of InSb thin films prepared by vacuum evaporation

1989 ◽  
Vol 66 (9) ◽  
pp. 4252-4257 ◽  
Author(s):  
H. Okimura ◽  
T. Matsumae ◽  
M. Ohshita
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Vacuum Evaporation ◽  
Dendritic Crystal ◽  
Insb Thin Films

Thermoelectric and Electrical Properties of Si-doped InSb Thin Films

2019 ◽  
Vol 16 (24) ◽  
pp. 7-12 ◽  
Author(s):  
Hirotaka Nagata ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Insb Thin Films ◽  
Si Doped

Optical and electrical properties of arylenevinylene compounds thin films prepared by vacuum evaporation

2012 ◽  
Vol 161 (23-24) ◽  
pp. 2612-2617 ◽  
Author(s):  
O. Rasoga ◽  
L. Vacareanu ◽  
M. Grigoras ◽  
M. Enculescu ◽  
M. Socol ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Vacuum Evaporation ◽  
Optical And Electrical Properties

Electrical properties of InSb thin films in low noise hall generators on a ferrite substrate

1976 ◽  
Vol 36 (2) ◽  
pp. 483-485 ◽  
Author(s):  
N. Kotera ◽  
T. Oi ◽  
K. Sato ◽  
J. Shigeta ◽  
N. Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Noise ◽  
Insb Thin Films ◽  
Ferrite Substrate ◽  
Hall Generators

Electrical properties of nanocrystalline CdSe thin films prepared by thermal vacuum evaporation

2008 ◽  
Vol 23 (9) ◽  
pp. 095002 ◽  
Author(s):  
Z Aneva ◽  
D Nesheva ◽  
C Main ◽  
S Reynolds ◽  
A G Fitzgerald ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Vacuum Evaporation ◽  
Thermal Vacuum

Electrical properties of InSb thin films with an InAsSb buffer layer grown by MOVPE

2010 ◽  
Vol 8 (2) ◽  
pp. 278-281 ◽  
Author(s):  
Hideyuki Homma ◽  
Hirotaka Nagata ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Insb Thin Films

scholarly journals Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

2016 ◽  
Vol 4 (6) ◽  
pp. 1345-1350 ◽  
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Indium Antimonide ◽  
Quantum Confinement ◽  
Pulse Electrodeposition ◽  
Electrochemically Deposited ◽  
Insb Thin Films ◽  
Moss Effect

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

Effect of laser irradiation on the electrical properties of polycrystallinep‐InSb thin films

1983 ◽  
Vol 54 (10) ◽  
pp. 6055-6057 ◽  
Author(s):  
G. P. Srivastava ◽  
K. N. Tripathi ◽  
N. K. Sehgal
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Irradiation ◽  
Insb Thin Films
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