scholarly journals Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

2016 ◽  
Vol 4 (6) ◽  
pp. 1345-1350 ◽  
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Indium Antimonide ◽  
Quantum Confinement ◽  
Pulse Electrodeposition ◽  
Electrochemically Deposited ◽  
Insb Thin Films ◽  
Moss Effect

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.

scholarly journals Correction: Electrochemically deposited nanocrystalline InSb thin films and their electrical properties

2019 ◽  
Vol 7 (21) ◽  
pp. 6475-6475
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Electrochemically Deposited ◽  
Insb Thin Films

Correction for ‘Electrochemically deposited nanocrystalline InSb thin films and their electrical properties’ by K. E. Hnida et al., J. Mater. Chem. C, 2016, 4, 1345–1350.

Effect of MWCNT addition on the optical band gap of PVA/CS transient biocomposites

2021 ◽  
pp. 002199832110370
Author(s):  
Ömer Bahadır Mergen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Band Gap ◽  
Optical Band Gap ◽  
Rapid Development ◽  
Measurement Techniques ◽  
Resistivity Measurement ◽  
Optical Parameters ◽  
Optical And Electrical Properties ◽  
Biocomposite Films

In recent years, as a result of increasing environmental concerns, biodegradable materials have gained great attention. With the rapid development of electronic technology, the importance of innovation and development of low-cost, sustainable, transient bioelectronics materials is increasing. In this research, the preparation of Poly(Vinyl Alcohol) (PVA), Chitosan (CS), and Multi-Walled Carbon nanotube (MWCNT) biocomposite films have been described. The solution mixing, ultrasonic mixing, and spin coating techniques were used to prepare the PVA/CS/MWCNT biocomposite thin films. UV–Vis absorption spectroscopy and two-point probe resistivity measurement techniques were used to study the optical and electrical properties of the biocomposite thin films. Optical band gap energies ( Eg) of PVA/CS/MWCNT biocomposites were obtained using the Tauc and Absorbance Spectrum Fitting (ASF) methods. Results obtained with both methods were found to be exactly the same. Experimental results have shown that with increasing MWCNT concentration, electrical conductivity (σ) increases from 1.75x10−16 S to 2.94x10−3 S, and Eg decreases significantly. At the same time, the fundamental optical parameters such as band tail (Urbach) energy ( Eu), refractive index ( n), absorption ( α), and extinction ( k) coefficient of the PVA/CS/MWCNT biocomposites were investigated in the UV-VIS range. The improvement observed in the optical and electrical properties of PVA/CS/MWCNT biocomposite films shows that these composites could be used as bioelectronics materials.

Thermoelectric and Electrical Properties of Si-doped InSb Thin Films

2019 ◽  
Vol 16 (24) ◽  
pp. 7-12 ◽  
Author(s):  
Hirotaka Nagata ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Insb Thin Films ◽  
Si Doped

scholarly journals Band-gap tuning at the strong quantum confinement regime in magnetic semiconductor EuS thin films

2012 ◽  
Vol 100 (21) ◽  
pp. 211910 ◽  
Author(s):  
Panagiotis Poulopoulos ◽  
Björn Lewitz ◽  
Andreas Straub ◽  
Spiridon D. Pappas ◽  
Sotirios A. Droulias ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Quantum Confinement ◽  
Magnetic Semiconductor ◽  
Band Gap Tuning

scholarly journals Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2146 ◽  
Author(s):  
Chayma Abed ◽  
Susana Fernández ◽  
Selma Aouida ◽  
Habib Elhouichet ◽  
Fernando Priego ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Thin Layers ◽  
Working Pressure ◽  
Hall Effect Measurements ◽  
Diffraction Patterns

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

Electrical properties of InSb thin films in low noise hall generators on a ferrite substrate

1976 ◽  
Vol 36 (2) ◽  
pp. 483-485 ◽  
Author(s):  
N. Kotera ◽  
T. Oi ◽  
K. Sato ◽  
J. Shigeta ◽  
N. Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Noise ◽  
Insb Thin Films ◽  
Ferrite Substrate ◽  
Hall Generators

Electrical properties of InSb thin films with an InAsSb buffer layer grown by MOVPE

2010 ◽  
Vol 8 (2) ◽  
pp. 278-281 ◽  
Author(s):  
Hideyuki Homma ◽  
Hirotaka Nagata ◽  
Shigeo Yamaguchi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Buffer Layer ◽  
Insb Thin Films

QUANTUM CONFINEMENT EFFECTS ON THE OPTICAL PROPERTIES OF ION BEAM SPUTTERED NICKEL OXIDE THIN FILMS

2001 ◽  
Vol 15 (02) ◽  
pp. 191-200 ◽  
Author(s):  
M. GHANASHYAM KRISHNA ◽  
A. K. BHATTACHARYA
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nickel Oxide ◽  
Band Gap ◽  
Quantum Confinement ◽  
Ion Beam ◽  
Confinement Effects ◽  
Oxide Thin Films ◽  
Quantum Confinement Effects ◽  
Nickel Oxide Thin Films

Quantum confinement effects on the optical properties of ion beam sputtered nickel oxide thin films are reported. Thin films with crystallite sizes in the range 9 to 14 nm have been deposited on to fused silica substrates. There is an increase in band gap, from 3.4 to 3.9 eV, and a decrease in refractive index, from 2.4 to 1.6, with decrease in crystallite size, that can be attributed to quantum confinement effects. The effective mass approximation has been used to explain the observed behaviour in band gap variation.

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