Effect of laser irradiation on the electrical properties of polycrystallinep‐InSb thin films

1983 ◽  
Vol 54 (10) ◽  
pp. 6055-6057 ◽  
Author(s):  
G. P. Srivastava ◽  
K. N. Tripathi ◽  
N. K. Sehgal
2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shanyue Zhao ◽  
Yinqun Hua ◽  
Ruifang Chen ◽  
Jian Zhang ◽  
Ping Ji

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.


2019 ◽  
Vol 16 (24) ◽  
pp. 7-12 ◽  
Author(s):  
Hirotaka Nagata ◽  
Shigeo Yamaguchi

1976 ◽  
Vol 36 (2) ◽  
pp. 483-485 ◽  
Author(s):  
N. Kotera ◽  
T. Oi ◽  
K. Sato ◽  
J. Shigeta ◽  
N. Yamamoto ◽  
...  

2010 ◽  
Vol 8 (2) ◽  
pp. 278-281 ◽  
Author(s):  
Hideyuki Homma ◽  
Hirotaka Nagata ◽  
Shigeo Yamaguchi

2016 ◽  
Vol 4 (6) ◽  
pp. 1345-1350 ◽  
Author(s):  
K. E. Hnida ◽  
S. Bäßler ◽  
J. Mech ◽  
K. Szaciłowski ◽  
R. P. Socha ◽  
...  

Indium antimonide thin films were fabricated by pulse electrodeposition. Band gap widening due to quantum confinement (0.17 eV) and the Burstein–Moss effect (0.19 eV) was observed. The stoichiometric InSb films showed S coefficient values higher than those obtained by MOCVD.


1990 ◽  
Vol 67 (10) ◽  
pp. 6214-6219 ◽  
Author(s):  
A. L. Dawar ◽  
P. K. Shishodia ◽  
Gayatri Chauhan ◽  
Anil Kumar ◽  
P. C. Mathur

RSC Advances ◽  
2016 ◽  
Vol 6 (50) ◽  
pp. 44321-44332 ◽  
Author(s):  
Shabir Ahmad ◽  
K. Asokan ◽  
M. Zulfequar

The present study focuses on the influence of laser irradiation induced photo crystallization on the modification of the optical and electrical properties of thermally evaporated amorphous Se90−xHgxS10(x= 0, 5, 10, 15) thin films.


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