Improvement of Copper Diffusion Barrier Properties of Tantalum Nitride Films by Incorporating Ruthenium Using PEALD

2008 ◽  
Vol 155 (11) ◽  
pp. H885 ◽  
Author(s):  
Sung-Wook Kim ◽  
Se-Hun Kwon ◽  
Seong-Jun Jeong ◽  
Sang-Won Kang
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Diffusion

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

A Study on CVD TaN as a Diffusion Barrier for Cu Interconnects

2000 ◽  
Vol 612 ◽  
Author(s):  
Se-Joon Im ◽  
Soo-Hyun Kim ◽  
Ki-Chul Park ◽  
Sung-Lae Cho ◽  
Ki-Bum Kim
Keyword(s):  
Activation Energy ◽  
Gas Phase ◽  
Diffusion Barrier ◽  
Surface Reaction ◽  
Film Growth ◽  
Ion Beam ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
X Ray

AbstractTantalum nitride (TaN) films were deposited using pentakis-diethylamido-tantalum [PDEAT, Ta(N(C2H5)2)5] as a precursor. During film growth, N- and Ar-ion beams with an energy of 120 eV were supplied in order to improve the film quality. In case of thermallydecomposed films, the deposition rate is controlled by the surface reaction up to about 350 °C with an activation energy of about 1.07 eV. The activation energy of the surface reaction controlled regime is decreased to 0.26 eV when the Ar-beam is applied. However, in case of Nbeam bombarded films, the deposition is controlled by the precursor diffusion in gas phase at the whole temperature range. By using Ar-beam, the resistivity of the film is drastically reduced from approximately 10000 µω-cm to 600 µω-cm and the density of the film is increased from 5.85 g/cm3 to 8.26 g/cm3, as compared with thermally-decomposed film. The use of N-beam also considerably lowers the resistivity of films (∼ 800 µω-cm) and increases the density of the films (7.5 g/cm3). Finally, the diffusion barrier properties of 50-nm-thick TaN films for Cu were investigated aftre annealing by X-ray diffraction analysis. The films deposited using N- and Arbeam showed the Cu3Si formation after annealing at 650 °C for 1 hour, while thermallydecomposed films showed Cu3Si peaks firstly after annealing at 600 °C. It is considered that the improvements of the diffusion barrier performance of the films deposited using N- and Ar-ion beam are the consequence of the film densification resulting from the ion bombardment during film growth.

Copper diffusion barrier properties of CVD boron carbo-nitride

2005 ◽  
Vol 23 (2) ◽  
pp. 463 ◽  
Author(s):  
E. R. Engbrecht ◽  
Y.-M. Sun ◽  
K. H. Junker ◽  
J. M. White ◽  
J. G. Ekerdt
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Copper Diffusion

Fabrication of Organic Thin Films for Copper Diffusion Barrier Layers Using Molecular Layer Deposition

2010 ◽  
Vol 1249 ◽  
Author(s):  
Stacey Bent ◽  
Paul William Loscutoff ◽  
Scott Clendenning
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Molecular Layer ◽  
Organic Thin Films ◽  
Barrier Properties ◽  
Diffusion Barriers ◽  
Molecular Layer Deposition ◽  
Copper Diffusion ◽  
Barrier Layers ◽  
Layer Deposition

AbstractDevice scaling predicts that copper barrier layers of under 3 nm in thickness will soon be needed in back-end processing for integrated circuits, motivating the development of new barrier layer materials. In this work, nanoscale organic thin films for use as possible copper diffusion barrier layers are deposited by molecular layer deposition (MLD) utilizing a series of self-limiting reactions of organic molecules. MLD can be used to tailor film properties to optimize desirable barrier properties, including density, copper surface adhesion, thermal stability, and low copper diffusion. Three systems are examined as copper diffusion barriers, a polyurea film deposited by the reaction of 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED), a polyurea film with a sulfide-modified backbone, and a polythiourea films using a modified coupling chemistry. Following deposition of the MLD films, copper is sputter deposited. The copper diffusion barrier properties of the film are tested through adhesion and annealing tests, including 4-point bend testing and TEM imaging to examine the level of copper penetration. The promise and challenges of MLD-formed organic copper diffusion barriers will be discussed.

Effect of phosphorus on the copper diffusion barrier properties of electroless CoWP films

2011 ◽  
Vol 519 (15) ◽  
pp. 4958-4962 ◽  
Author(s):  
T.K. Tsai ◽  
S.S. Wu ◽  
C.S. Hsu ◽  
J.S. Fang
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Copper Diffusion

Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization

1999 ◽  
Vol 146 (10) ◽  
pp. 3724-3730 ◽  
Author(s):  
Sung‐Lae Cho ◽  
Ki‐Bum Kim ◽  
Seok‐Hong Min ◽  
Hyun‐Kook Shin ◽  
Sam‐Dong Kimd
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Cu Metallization ◽  
Chemical Vapor Deposited

Deposition and Characteristics of Tantalum Nitride films by Plasma Assisted Atomic Layer Deposition as Cu Diffusion Barrier

2003 ◽  
Vol 766 ◽  
Author(s):  
Kyoung-Il Na ◽  
Se-Jong Park ◽  
Woo-Cheol Jeong ◽  
Se-Hoon Kim ◽  
Sung-Eun Boo ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Oxygen ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Layer Deposition ◽  
Cu Diffusion Barrier ◽  
The Stability ◽  
Oxygen Impurities

AbstractFor a diffusion barrier against Cu, tantalum nitride (TaN) films have been successfully deposited by both conventional thermal atomic layer deposition (ALD) and plasma assisted atomic layer deposition (PAALD), using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia (NH3) as precursors. The growth rate of PAALD TaN at substrate temperature 250° was slightly higher than that of ALD TaN (0.80 Å/cycle for PAALD and 0.75 Å/cycle for ALD). Density of TaN films deposited by PAALD was as high as 11.0 g/cm3, considerably higher compared to the value of 8.3 g/cm3 obtained by ALD. The N: Ta ratio for ALD TaN was 44: 37 in composition and the film contained approximately 8∼10 atomic % carbon and 11 atomic % oxygen impurities. On the other hand, the ratio for PAALD TaN layers was 47: 44 and the respective carbon and oxygen contents of TaN layers decreased to 3 atomic % and 4 atomic %. The stability of 10 nm-thick TaN films as a Cu diffusion barrier was tested through thermal annealing for 30 minutes in N2 ambient and characterized by XRD, which proves the PAALD deposited TaN film to maintain better barrier properties against Cu below 800°.

Tantalum Nitride for Copper Diffusion Blocking on Thin Film (BiSb)2Te3

2012 ◽  
Vol 1490 ◽  
pp. 145-150
Author(s):  
H. H. Hsu ◽  
C. H. Cheng ◽  
C. K. Lin ◽  
K. Y. Chen ◽  
Y. L. Lin
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Energy Dispersive Spectrometry ◽  
Deep Understanding ◽  
Tantalum Nitride ◽  
Copper Diffusion ◽  
Thermal Budget ◽  
Transmission Electron ◽  
Diffusion Effects ◽  
Diffusion Behaviors

ABSTRACTThis study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te3thermoelectric layer.

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