scholarly journals Tantalum Nitride Films Grown by Inorganic Low Temperature Thermal Chemical Vapor Deposition Diffusion Barrier Properties in Copper Metallization

1999 ◽  
Vol 146 (1) ◽  
pp. 170-176 ◽  
Author(s):  
Alain E. Kaloyeros ◽  
Xiaomeng Chen ◽  
Tanja Stark ◽  
Kaushik Kumar ◽  
Soon‐Cheon Seo ◽  
...  
1999 ◽  
Vol 14 (5) ◽  
pp. 2043-2052 ◽  
Author(s):  
Xiaomeng Chen ◽  
Gregory G. Peterson ◽  
Cindy Goldberg ◽  
Gerry Nuesca ◽  
Harry L. Frisch ◽  
...  

A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the growth of TaNxfrom the reaction of tantalum pentabromide, ammonia, and hydrogen. Studies of process reaction kinetics yielded two sequential rate-controlling steps, with an activation energy of 0.45 eV for the kinetically limited reaction regime. Additionally, a systematic design of experiments approach examined the effects of key process parameters, namely, substrate temperature, source temperature, and hydrogen and ammonia flows, on film properties. A wide CVD process window was established for nitrogen-rich amorphous TaNxwith contamination below 1 at.%. Film conformality was higher than 95% in nominally 0.30 μm, 4.5: 1 aspect ratio, trench structures.


2006 ◽  
Vol 45 (6A) ◽  
pp. 5329-5331 ◽  
Author(s):  
Katsunori Aoki ◽  
Tetsurou Yamamoto ◽  
Hiroshi Furuta ◽  
Takashi Ikuno ◽  
Shinichi Honda ◽  
...  

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