Copper diffusion barrier properties of CVD boron carbo-nitride

2005 ◽  
Vol 23 (2) ◽  
pp. 463 ◽  
Author(s):  
E. R. Engbrecht ◽  
Y.-M. Sun ◽  
K. H. Junker ◽  
J. M. White ◽  
J. G. Ekerdt
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Copper Diffusion

Fabrication of Organic Thin Films for Copper Diffusion Barrier Layers Using Molecular Layer Deposition

2010 ◽  
Vol 1249 ◽  
Author(s):  
Stacey Bent ◽  
Paul William Loscutoff ◽  
Scott Clendenning
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Molecular Layer ◽  
Organic Thin Films ◽  
Barrier Properties ◽  
Diffusion Barriers ◽  
Molecular Layer Deposition ◽  
Copper Diffusion ◽  
Barrier Layers ◽  
Layer Deposition

AbstractDevice scaling predicts that copper barrier layers of under 3 nm in thickness will soon be needed in back-end processing for integrated circuits, motivating the development of new barrier layer materials. In this work, nanoscale organic thin films for use as possible copper diffusion barrier layers are deposited by molecular layer deposition (MLD) utilizing a series of self-limiting reactions of organic molecules. MLD can be used to tailor film properties to optimize desirable barrier properties, including density, copper surface adhesion, thermal stability, and low copper diffusion. Three systems are examined as copper diffusion barriers, a polyurea film deposited by the reaction of 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED), a polyurea film with a sulfide-modified backbone, and a polythiourea films using a modified coupling chemistry. Following deposition of the MLD films, copper is sputter deposited. The copper diffusion barrier properties of the film are tested through adhesion and annealing tests, including 4-point bend testing and TEM imaging to examine the level of copper penetration. The promise and challenges of MLD-formed organic copper diffusion barriers will be discussed.

Effect of phosphorus on the copper diffusion barrier properties of electroless CoWP films

2011 ◽  
Vol 519 (15) ◽  
pp. 4958-4962 ◽  
Author(s):  
T.K. Tsai ◽  
S.S. Wu ◽  
C.S. Hsu ◽  
J.S. Fang
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Copper Diffusion

Electrografted insulator layer as copper diffusion barrier for TSV interposers

2013 ◽  
Vol 2013 (1) ◽  
pp. 000022-000025 ◽  
Author(s):  
V. Mevellec ◽  
F. Raynal ◽  
D. Suhr ◽  
T. Dequivre ◽  
L. Religieux
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Oriented Growth ◽  
Insulator Layer ◽  
Copper Diffusion ◽  
Mechanical And Electrical Properties ◽  
Cost Of Ownership ◽  
Chemical Grafting ◽  
Precursor Molecules

Alchimer develops alternative wet solutions based on electrografting (eG™) and chemical grafting (cG™) proprietary technologies. eG is based on surface chemistry formulations and processes. It is applied to conductive and semiconductive surfaces, and enables self-oriented growth of thin coatings of various materials, especially polymer and metals, initiated by in-situ chemical reactions between specific precursor molecules and the surface. Due to outstanding thermal, mechanical and electrical properties, electrografted polymer layers are an efficient insulation layer for TSV applications. In this paper, we fill focus on the copper diffusion barrier properties of this eG polymer layer and the associated Cost of Ownership (CoO) reduction for TSV metallization.

Adhesion and Cu Diffusion Barrier Properties of a MnOx Barrier Layer Formed with Thermal MOCVD

2009 ◽  
Vol 1156 ◽  
Author(s):  
Koji Neishi ◽  
Vijay Kumar Dixit ◽  
S. Aki ◽  
Junichi Koike ◽  
K. Matsumoto ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Valence State ◽  
Dielectric Layer ◽  
Barrier Properties ◽  
Barrier Property ◽  
Adhesion Property ◽  
Composition Analysis ◽  
Good Adhesion ◽  
Deposition Chamber

AbstractA thin-amorphous MnOx layer using self-forming barrier process with a Cu-Mn alloy shows good adhesion and diffusion barrier properties between copper and dielectric layer, resulting in excellent reliability for stress and electromigration. Meanwhile, chemical vapor deposition (CVD) can be employed for conformal deposition of the barrier layer in narrow trenches and vias for future technology node. In our previous research, a thin and uniform amorphous MnOx layer could be formed on TEOS-oxide by thermal metal-organic CVD (MOCVD), showing a good diffusion barrier property. In addition, a good adhesion strength is necessary between a Cu line and a dielectric layer not only to ensure good SM and EM resistance but also to prevent film delamination under mechanical or thermal stress conditions during fabrication process such as chemical mechanical polishing or high temperature annealing. To date, no information is available with regard to the adhesion property of CVD-MnOx. In this work, we report diffusion barrier property in further detail and adhesion property in PVD-Cu/CVD-MnOx/SiO2/Si. The temperature dependence of the adhesion property is correlated with the chemical composition and valence state of Mn investigated with SIMS and Raman spectroscopy.Substrates were p-type Si wafers having a plasma-TEOS oxide of 100nm in thickness. CVD was carried out in a deposition chamber. A manganese precursor was vaporized and introduced into the deposition chamber with H2 carrier gas. After the CVD, a Cu overlayer was deposited on some samples using a sputtering system in load lock chamber of the CVD machine. The diffusion barrier property of the MnOx film was investigated in annealed samples at 400 oC for 100 hours in a vacuum of better than 1.0×10-5 Pa. The Adhesion property of Mn oxide was investigated by Scotch tape test in the as-deposited and in the annealed Cu/CVD-MnOx/TEOS samples. The obtained samples were analyzed for thickness and microstructure with TEM, chemical bonding states of the MnOx layer with XPS, and composition of each layer with SIMS.In the CVD deposition below 300 °C, no Cu delamination was observed both in the as-deposited and in the annealed Cu/CVD-MnOx/SiO2 samples. On the other hand, in the CVD deposition at 400 °C, the Cu films were delaminated from the CVD-MnOx/TEOS substrates. The XPS peak position of Mn 2p and Mn 3s spectra indicated that the valence state of Mn in the as-deposited barrier layer below 400 °C was 2+. Composition analysis with SIMS as well as Raman also indicated the presence of a larger amount of carbon at 400 °C than at less than 300 °C. The good adhesion between Cu and MnO could be attributed to an amount of carbon inclusion in the CVD barrier layer.

scholarly journals Barrier Properties of Very Thin Ta and TaN Layers Against Copper Diffusion

1998 ◽  
Vol 145 (7) ◽  
pp. 2538-2545 ◽  
Author(s):  
M. T. Wang ◽  
Y. C. Lin ◽  
M. C. Chen
Keyword(s):  
Barrier Properties ◽  
Copper Diffusion

scholarly journals Diffusion barrier properties of molybdenum back contacts for Cu(In,Ga)Se2solar cells on stainless steel foils

2013 ◽  
Vol 113 (5) ◽  
pp. 054506 ◽  
Author(s):  
P. Blösch ◽  
F. Pianezzi ◽  
A. Chirilă ◽  
P. Rossbach ◽  
S. Nishiwaki ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Diffusion Barrier ◽  
Barrier Properties ◽  
Stainless Steel Foils ◽  
Steel Foils
Sign in / Sign up

Export Citation Format

Share Document