Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration

2000 ◽  
Vol 87 (12) ◽  
pp. 8473-8482 ◽  
Author(s):  
G. S. Chen ◽  
S. T. Chen
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Barrier Properties ◽  
Tantalum Nitride

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

A Study on CVD TaN as a Diffusion Barrier for Cu Interconnects

2000 ◽  
Vol 612 ◽  
Author(s):  
Se-Joon Im ◽  
Soo-Hyun Kim ◽  
Ki-Chul Park ◽  
Sung-Lae Cho ◽  
Ki-Bum Kim
Keyword(s):  
Activation Energy ◽  
Gas Phase ◽  
Diffusion Barrier ◽  
Surface Reaction ◽  
Film Growth ◽  
Ion Beam ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
X Ray

AbstractTantalum nitride (TaN) films were deposited using pentakis-diethylamido-tantalum [PDEAT, Ta(N(C2H5)2)5] as a precursor. During film growth, N- and Ar-ion beams with an energy of 120 eV were supplied in order to improve the film quality. In case of thermallydecomposed films, the deposition rate is controlled by the surface reaction up to about 350 °C with an activation energy of about 1.07 eV. The activation energy of the surface reaction controlled regime is decreased to 0.26 eV when the Ar-beam is applied. However, in case of Nbeam bombarded films, the deposition is controlled by the precursor diffusion in gas phase at the whole temperature range. By using Ar-beam, the resistivity of the film is drastically reduced from approximately 10000 µω-cm to 600 µω-cm and the density of the film is increased from 5.85 g/cm3 to 8.26 g/cm3, as compared with thermally-decomposed film. The use of N-beam also considerably lowers the resistivity of films (∼ 800 µω-cm) and increases the density of the films (7.5 g/cm3). Finally, the diffusion barrier properties of 50-nm-thick TaN films for Cu were investigated aftre annealing by X-ray diffraction analysis. The films deposited using N- and Arbeam showed the Cu3Si formation after annealing at 650 °C for 1 hour, while thermallydecomposed films showed Cu3Si peaks firstly after annealing at 600 °C. It is considered that the improvements of the diffusion barrier performance of the films deposited using N- and Ar-ion beam are the consequence of the film densification resulting from the ion bombardment during film growth.

Investigation of oxygen diffusion barrier properties of reactively sputtered iro2 thin films

2001 ◽  
Vol 37 (1-4) ◽  
pp. 29-38 ◽  
Author(s):  
Cay Uwe Pinnow ◽  
Igor Kasko ◽  
Nicolas Nagel ◽  
Christine Dehm ◽  
Franz Jahnel ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Oxygen Diffusion ◽  
Barrier Properties

Fabrication of Organic Thin Films for Copper Diffusion Barrier Layers Using Molecular Layer Deposition

2010 ◽  
Vol 1249 ◽  
Author(s):  
Stacey Bent ◽  
Paul William Loscutoff ◽  
Scott Clendenning
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Molecular Layer ◽  
Organic Thin Films ◽  
Barrier Properties ◽  
Diffusion Barriers ◽  
Molecular Layer Deposition ◽  
Copper Diffusion ◽  
Barrier Layers ◽  
Layer Deposition

AbstractDevice scaling predicts that copper barrier layers of under 3 nm in thickness will soon be needed in back-end processing for integrated circuits, motivating the development of new barrier layer materials. In this work, nanoscale organic thin films for use as possible copper diffusion barrier layers are deposited by molecular layer deposition (MLD) utilizing a series of self-limiting reactions of organic molecules. MLD can be used to tailor film properties to optimize desirable barrier properties, including density, copper surface adhesion, thermal stability, and low copper diffusion. Three systems are examined as copper diffusion barriers, a polyurea film deposited by the reaction of 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED), a polyurea film with a sulfide-modified backbone, and a polythiourea films using a modified coupling chemistry. Following deposition of the MLD films, copper is sputter deposited. The copper diffusion barrier properties of the film are tested through adhesion and annealing tests, including 4-point bend testing and TEM imaging to examine the level of copper penetration. The promise and challenges of MLD-formed organic copper diffusion barriers will be discussed.

Diffusion barrier properties of atomic-layer-deposited iridium thin films on Cu/Ir/Si structures

2012 ◽  
Vol 60 (10) ◽  
pp. 1521-1525
Author(s):  
Sang In Song ◽  
Bum Ho Choi ◽  
Jong Ho Lee ◽  
Hong Kee Lee
Keyword(s):  
Thin Films ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Barrier Properties

Deposition of Copper Thin Films on Titanium Nitride Layer Prepared by Flow Modulation CVD Technology

2004 ◽  
Vol 449-452 ◽  
pp. 457-460
Author(s):  
Nam Ihn Cho ◽  
Min Chul Kim ◽  
Kyung Hwa Rim ◽  
Ho Jung Chang ◽  
Keeyoung Jun ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Diffusion Barrier ◽  
High Vacuum ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Nitride Layer ◽  
Layer Growth ◽  
Flow Modulation

Copper (Cu) thin films have been deposited onto titanium nitride (TiN) layer which was previously prepared by flow modulation chemical vapor deposition (FMCVD technology. The diffusion barrier properties of the TiN layer to Cu have been studied depending upon the post-annealing and the sample preparation conditions of the TiN layer. The Cu deposition has performed by RF magnetron sputtering with 5N target in the high vacuum ambient. The FMCVD process has carried out in a single CVD chamber by switching TiCl4flow to the argon flow cyclically, which creates sequential deposition of TiN layer and chlorine reduction process. The higher flow modulation cycle and Ar purge time during the TiN layer growth have been observed to provide the better diffusion barrier property in Auger depth profile and X-ray diffraction analysis.

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