Tantalum Nitride for Copper Diffusion Blocking on Thin Film (BiSb)2Te3

2012 ◽  
Vol 1490 ◽  
pp. 145-150
Author(s):  
H. H. Hsu ◽  
C. H. Cheng ◽  
C. K. Lin ◽  
K. Y. Chen ◽  
Y. L. Lin
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Energy Dispersive Spectrometry ◽  
Deep Understanding ◽  
Tantalum Nitride ◽  
Copper Diffusion ◽  
Thermal Budget ◽  
Transmission Electron ◽  
Diffusion Effects ◽  
Diffusion Behaviors

ABSTRACTThis study demonstrates the feasibility of introducing a TaN thin film as a copper diffusion barrier for p-type (BiSb)2Te3 thermoelectric material. Compared to conventional Ni diffusion barrier, remarkably little void generation in Cu bulk or near Cu/TaN interface originated from Cu penetration is observed for TaN barrier after suffering the thermal budget of close to soldering. Diffusion behaviors of the barriers were analyzed by transmission electron microscopy (TEM) and energy dispersive spectrometry (EDS) to make a deep understanding in clarifying interface diffusion effects among the Cu electrode, the barrier layer, and the (BiSb)2Te3thermoelectric layer.

5nm ruthenium thin film as a directly plateable copper diffusion barrier

2005 ◽  
Vol 86 (8) ◽  
pp. 083104 ◽  
Author(s):  
T. N. Arunagiri ◽  
Y. Zhang ◽  
O. Chyan ◽  
M. El-Bouanani ◽  
M. J. Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Copper Diffusion

Tungsten-Doped Indium Oxide Thin Film as an Effective High-Temperature Copper Diffusion Barrier

2014 ◽  
Vol 3 (6) ◽  
pp. N15-N17 ◽  
Author(s):  
J. Yu ◽  
J. Bian ◽  
L. Jiang ◽  
Y. Qiu ◽  
W. Duan ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Indium Oxide ◽  
Diffusion Barrier ◽  
Oxide Thin Film ◽  
Copper Diffusion ◽  
Indium Oxide Thin Film

Single Crystal TaN Thin Films on TiN/Si Heterostructure

2002 ◽  
Vol 716 ◽  
Author(s):  
H. Wang ◽  
Ashutosh Tiwari ◽  
X. Zhang ◽  
A. Kvit ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Thin Layer ◽  
Diffusion Barrier ◽  
Tantalum Nitride ◽  
X Ray Diffraction ◽  
X Ray ◽  
Copper Interconnection ◽  
Transmission Electron

AbstractWe have successfully grown epitaxial cubic (B1-NaCl structure) tantalum nitride films on Si (100) and (111) substrate using a pulsed laser deposition technique. A thin layer of titanium nitride was used as a buffer medium. We characterized these films using X-ray diffraction, high resolution transmission electron microscopy and scanning transmission electron microscopy (Zcontrast). X-ray diffraction and high-resolution transmission electron microscopy confirmed the single crystalline nature of these films with cubic-on-cubic epitaxy. The epitaxial relations follow TaN(100)//TiN(100)//Si(100) on Si(100) and TaN(111)//TiN(111)//Si(111) on Si(111). We observed sharp interfaces of TaN/TiN and TiN/Si without any indication of interfacial reaction. Rutherford backscattering experiments showed these films to be slightly nitrogen deficient (TaN0.95). High precision electrical resistivity measurements showed excellent metallic nature of these films. We also tried to deposit TaN directly on silicon, the films were found to be polycrystalline. In our method, TiN plays a key role in facilitating the epitaxial growth of TaN. This method exploits the concept of lattice matching epitaxy between TaN and TiN and domain matching epitaxy between TiN and Si. We studied the diffusion barrier properties of these films by growing a thin layer of copper on the top and subsequently annealing the films at 500°C and 600°C in vacuum. Cu diffusion layer was about 2nm after 600°C annealing for 30min. This work explores a promising way to grow high quality TaN diffusion barrier on silicon for copper interconnection.

Transmission Electron Microscopy of oriented Co84Cr14Ta2 thin films for longitudinal magnetic recording

1991 ◽  
Vol 49 ◽  
pp. 756-757
Author(s):  
T. P. Nolan
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Cost ◽  
Low Noise ◽  
Information Storage ◽  
High Coercivity ◽  
Magnetic Alloy ◽  
Magnetic Media ◽  
Transmission Electron

Thin film magnetic media are being used as low cost, high density forms of information storage. The development of this technology requires the study, at the sub-micron level, of morphological, crystallographic, and magnetic properties, throughout the depth of the deposited films. As the microstructure becomes increasingly fine, widi grain sizes approaching 100Å, the unique characterization capabilities of transmission electron microscopy (TEM) have become indispensable to the analysis of such thin film magnetic media.Films were deposited at 225°C, on two NiP plated Al substrates, one polished, and one circumferentially textured with a mean roughness of 55Å. Three layers, a 750Å chromium underlayer, a 600Å layer of magnetic alloy of composition Co84Cr14Ta2, and a 300Å amorphous carbon overcoat were then sputter deposited using a dc magnetron system at a power of 1kW, in a chamber evacuated below 10-6 torr and filled to 12μm Ar pressure. The textured medium is presently used in industry owing to its high coercivity, Hc, and relatively low noise. One important feature is that the coercivity in the circumferential read/write direction is significandy higher than that in the radial direction.

Some early history of replica techniques for electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1076-1077
Author(s):  
Robert M. Fisher
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Optical Microscope ◽  
Early History ◽  
Bulk Materials ◽  
Thin Sections ◽  
Transmission Electron ◽  
Reflected Light ◽  
History Of ◽  
Electron Microscopes

By 1940, a half dozen or so commercial or home-built transmission electron microscopes were in use for studies of the ultrastructure of matter. These operated at 30-60 kV and most pioneering microscopists were preoccupied with their search for electron transparent substrates to support dispersions of particulates or bacteria for TEM examination and did not contemplate studies of bulk materials. Metallurgist H. Mahl and other physical scientists, accustomed to examining etched, deformed or machined specimens by reflected light in the optical microscope, were also highly motivated to capitalize on the superior resolution of the electron microscope. Mahl originated several methods of preparing thin oxide or lacquer impressions of surfaces that were transparent in his 50 kV TEM. The utility of replication was recognized immediately and many variations on the theme, including two-step negative-positive replicas, soon appeared. Intense development of replica techniques slowed after 1955 but important advances still occur. The availability of 100 kV instruments, advent of thin film methods for metals and ceramics and microtoming of thin sections for biological specimens largely eliminated any need to resort to replicas.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

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