Spectroscopic Studies of Band Edge Electronic and Defect States in Elemental High-k Oxide Dielectrics and Si Oxynitride Alloys onto Si(100) Substrates

2019 ◽  
Vol 8 (1) ◽  
pp. 105-110
Author(s):  
Gerald Lucovsky ◽  
Hyungtak Seo ◽  
Les Fleming ◽  
Marc Ulrich ◽  
Jan Lüning
Keyword(s):  
Spectroscopic Studies ◽  
Band Edge ◽  
Defect States ◽  
High K

scholarly journals Spectroscopic Studies of Band Edge Electronic States in Elemental High-k Oxide Dielectrics on Si and Ge Substrates

2007 ◽  
Author(s):  
G. Lucovsky ◽  
H. Seo ◽  
L. B. Fleming ◽  
M. D. Ulrich ◽  
J. Lüning ◽  
...  
Keyword(s):  
Electronic States ◽  
Spectroscopic Studies ◽  
Band Edge ◽  
High K

scholarly journals Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique

AIP Advances ◽  
2014 ◽  
Vol 4 (8) ◽  
pp. 087114 ◽  
Author(s):  
W. Lu ◽  
J. X. Lu ◽  
X. Ou ◽  
X. J. Liu ◽  
Y. Q. Cao ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Defect States ◽  
High K

Additive Process Induced Strain (APIS) Technology for Lg = 30nm Band-Edge High-k/Metal Gate nMOSFET

2008 ◽  
Author(s):  
M. M. Hussain ◽  
K. Rader ◽  
C. Smith ◽  
C. Young ◽  
S. Suthram ◽  
...  
Keyword(s):  
Band Edge ◽  
Metal Gate ◽  
Additive Process ◽  
High K

Electronic States in the Gap of a-Si from Bond Angle Variations

1990 ◽  
Vol 192 ◽  
Author(s):  
B. N. Davidson ◽  
G. Lucovsky
Keyword(s):  
Valence Band ◽  
Density Of States ◽  
Bond Angle ◽  
Bethe Lattice ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Valence Band Edge ◽  
Defect States ◽  
Discrete State ◽  
Bond Angles

ABSTRACTWe investigate the formation of defect states in the gap of a-Si arising from deviations from the ideal tetrahedral bond angles. The local density of states for Si atoms in disordered environments is calculated using tight-binding parameters for the cluster-Bethe lattice method. The Hamiltonian for a-Si with bond angle distortions is taken as an average over many configurations associated with a random choice of bond angles, weighted by Gaussian distributions with standard deviations between 2°.and 10°. Bond angle deviations in this range generate a density of defect states at the valence band edge that: 1) increases as the average bond angle deviation increases; and 2) is significantly larger than the density of band tail states generated at the conduction band edge. We obtain a shift of the absorption edge from the joint density of states (DOS) as a function of bond angle deviations. In addition, a calculation of the DOS for a distorted tetrahedral cluster embedded in an idealized Bethe lattice yields a threshold bond angle distortion of ±20° for the appearance of a discrete state in the gap near the valence band edge.

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