scholarly journals Determination of the density of the defect states in Hf0.5Zr0.5O2 high-k film Deposited by using rf-magnetron sputtering technique

AIP Advances ◽  
2014 ◽  
Vol 4 (8) ◽  
pp. 087114 ◽  
Author(s):  
W. Lu ◽  
J. X. Lu ◽  
X. Ou ◽  
X. J. Liu ◽  
Y. Q. Cao ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Defect States ◽  
High K

Spectroscopic ellipsometric determination of optical properties of V-Al co-doped ZnO films by rf magnetron sputtering

2013 ◽  
Vol 30 (4) ◽  
pp. 221-227 ◽  
Author(s):  
A. Sayari ◽  
L. El Mir ◽  
S. Al-Heniti ◽  
E. Shalaan ◽  
S. J. Yaghmour ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno ◽  
Co Doped

scholarly journals The effect of the thickness of tunneling layer on the memory properties of (Cu2O)0.5(Al2O3)0.5 high-k composite charge-trapping memory devices

2016 ◽  
Vol 30 (15) ◽  
pp. 1650279 ◽  
Author(s):  
Jinqiu Liu ◽  
Jianxin Lu ◽  
Jiang Yin ◽  
Bo Xu ◽  
Yidong Xia ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Charge Trapping ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Memory Devices ◽  
Layer Deposition ◽  
High K ◽  
Charge Trapping Memory ◽  
Deposition Techniques ◽  
Composite Charge

The charge-trapping memory devices namely Pt/Al2O3/(Al2O[Formula: see text](Cu2O)[Formula: see text]/SiO2/[Formula: see text]-Si with 2, 3 and 4 nm SiO2 tunneling layers were fabricated by using RF magnetron sputtering and atomic layer deposition techniques. At an applied voltage of ±11 V, the memory windows in the C–V curves of the memory devices with 2, 3 and 4 nm SiO2 tunneling layers were about 4.18, 9.91 and 11.33 V, respectively. The anomaly in memory properties among the three memory devices was ascribed to the different back tunneling probabilities of trapped electrons in the charge-trapping dielectric (Al2O[Formula: see text](Cu2O)[Formula: see text] due to the different thicknesses of SiO2 tunneling layer.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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